• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.67-71
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• 2001

In this paper, the virtual implement of solar cell was proposed to solve the problems as reappearance and repetition of some situation in experiment of photovoltaic. To realize the VISC, mathematical model of solar cell for driving converter was studied and the buck converter were compared in viewpoint of tracking error of characteristic curve of solar cell using computer simulation.

• 한국세라믹학회지
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• 제32권11호
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1329-1334
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• 1988

$NH_3-O_2$의 열반응에 의해 산화막을 성장시키는 새로운 방법을 소개하고, 기존의 건식산화방법을 이용한 $SiO_2$박막의 특성을 비교 설명하였다. $NH_3$의 유량에 따라서 박막의 성장비가 증가하고, 성장된 막의 구성성분이 건식산화때와 같음을 확인하였다. C-V특성곡선에서도 $Q_{OX}$와 $Q_{SS}$가 거의같았고 히스테리시스현상도 없었다. 또한 n-MOS트랜지스터를 제작하고 측정한 결과 $I_D$-$V_{DS}$특성곡선이 건식산화와 비교하여 우수함을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.85-89
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• 1997

A microstructure of realistic ZnO varistor was constructed by Voronoi network and studied cia computer simulation. The grain size and standard deviation was calculated with new method and have good agreement with experimental data. In this network, the grain boundary conditions of three different type are randomly distributed. The three electrical boundary conditions . (1) type A junctions (high nonlinearity); (2) type B junctions (low nonlinearity); (3) type C junctions (linear with low-resistivity) are fitted from the experimental measurement. The electrical properties were studied by varying the boundary type concentration and the disorder parameter d. The shape of I-V characteristic curve of the network is affected by the type concentration and the disorder parameter has an effect on the double inflected region.

• 한국태양에너지학회 논문집
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• 제36권5호
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• pp.63-71
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• 2016

Installed PV module in field is affected by shading caused by various field environmental factors. Bypass diodes are installed in PV module for preventing a power loss and degradation of PV module by shading. But, Bypass diode is easily damaged by surge voltage and has often initial a defect. This paper propose the electric characteristic variation and the power prediction of PV module with damaged bypass diode. Firstly, the resistance for normal bypass diode and damaged bypass diode of resistance was measured by changing the current. When the current increases, the resistance of normal bypass diode is almost constant but the resistance of damaged bypass diode increases. Next, To estimate power of PV module by damaged bypass diode, the equation for the current is derived using solar cell equivalent circuit. Finally, the derived equation was simulated by using MatLab tools, was verified by comparing experimental data.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제55권12호
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• pp.633-639
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• 2006

High temperature superconductor (HTS) winding coil is one of the key component in superconducting device fabrication. Double-pancake style coils are widely used for such application. High resistance between pancake coils greatly affects the machine design, operating condition and thus the stability. In order to reduce such resistance, experimentalists are looking for efficient and damage free coil connecting methods. In this respect, here we proposed parallel joining method to connect the coils. This is to do crossly joining with HTS tapes on two parallel HTS tapes. Joint samples between two parallel HTS tapes were prepared by using HTS tapes and current-voltage (I-V) characteristic curves were investigated at liquid nitrogen temperature i.e., 77.3 K. A 20 cm length joint connected between two parallel HTS tapes shows $32.5n{\Omega}$, for currents up to 250 A. A small HTS magnet, having two double pancake sub-coils connected together through new parallel joint method was fabricated and their current-voltage (I-V) characteristic curve was investigated. At 77.3K, critical current(Ic) of 97 A and resistance of $55n{\Omega}$ for currents upto 130 A were measured. At operating current 86 A lower than Ic, Joule heats generated in whole magnet and at joint region between sub-coils were 226 mW and 0.4 mW, respectively. Low Joule heat generation suggests that this joining method may be used to fabricate HTS magnet or windings.

• 한국정보통신학회논문지
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• 제5권3호
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• pp.573-579
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• 2001

소자의 고집적을 위한 특성분석 기술은 빠른 변화를 보이고 있다. 이에 따라 고집적 소자의 특성을 시뮬레이션을 통하여 이해하고 이에 맞게 제작하는 기술은 매우 중요한 과제 중의 하나가 되었다. 소자가 마이크론급에서 나노급 이하로 작아지면서 그에 맞는 소자개발을 위해 여러 가지 구조가 제시되고 있는데 본 논문에서는 TCAD를 이용하여 여러 가지 구조 중에서 고농도로 도핑된 ground plane 위에 적층하여 만든 EPI MOSFET를 조사하였다. 이 구조의 특성과 임팩트이온화와 전계 그리고 I-V특성 곡선을 저 농도로 도핑된 드레인(LDD)MOSFET와 비교 분석하였다. 또한 TCAD의 유용성을 조사하여 시뮬레이터로서 적합함과 나노구조 소자에서의 스켈링이론의 적합함을 보았다.

• 전기전자학회논문지
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• 제23권4호
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• pp.1309-1313
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• 2019

본 논문에서는 Gate grounded NMOS(GGNMOS)와 Gate grounded Lateral insulated gate bipolar transistor(GGLIGBT), Silicon Controlled Rectifier(SCR), 그리고 제안된 ESD 보호 소자에 대한 전기적 특성을 비교 및 분석하였다. 우선 각 소자에 대한 I-V 특성 곡선을 시뮬레이션 함으로써 트리거 전압과 홀딩 전압을 확인하였다. 그 후에 각 소자에 대한 HBM 4k 시뮬레이션을 통해서 감내 특성을 확인하였다. HBM 4k 시뮬레이션 결과, 제안된 ESD 보호소자의 최대 온도가 GGNMOS와 GGLIGBT와 SCR에 비해서 낮기 때문에 그만큼 감내 특성이 개선되었다고 할 수 있으며, 이는 신뢰성 측면에서 우수한 ESD 보호소자임을 의미한다.

• Journal of Electrochemical Science and Technology
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• 제11권4호
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• pp.346-351
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• 2020

The removal characteristics of copper (Cu) from electrochemical surface by voltage-activated reaction were reviewed to assess the applicability of electrochemical-mechanical polishing (ECMP) process in three types of electrolytes, such as HNO₃, KNO₃ and NaNO₃. Electrochemical surface conditions such as active, passive, transient and trans-passive states were monitored from its current-voltage (I-V) characteristic curves obtained by linear sweep voltammetry (LSV) method. In addition, the oxidation and reduction process of the Cu surface by repetitive input of positive and negative voltages were evaluated from the I-V curve obtained using the cyclic voltammetry (CV) method. Finally, the X-ray diffraction (XRD) patterns and energy dispersive spectroscopy (EDS) analyses were used to observe the structural surface states of a Cu electrode. The electrochemical analyses proposed in this study will help to accurately control the material removal rate (MRR) from the actual ECMP process because they are a good methodology for predicting optimal electrochemical process parameters such as current density, operating voltage, and operating time before performing the ECMP process.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 춘계종합학술대회
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• pp.311-316
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• 2001

소자의 고집적을 위한 특성분석 기술은 빠른 변화를 보이고 있다. 이에 따라 고집적 소자의 특성을 시뮬레이션을 통하여 이해하고 이에 맞게 제작하는 기술을 매우 중요한 과제 중의 하나가 되었다. 소자가 마이크론급에서 나노급 이하로 작아지면서 그에 맞는 소자개발을 위해 여러 가지 구조가 제시되고 있는데 본 논문에서는 TCAD를 이용하여 여러 가지 구조 중에서 고농도로 도핑된 ground plane 위에 적층하여 만든 EFI MOSFET와 LDD구조의 단점을 개선한 newEPI MOSFET에 대해 조사하였다. 이 구조의 특성과 임팩트이온화와 전계 그리고 I-V 특성 곡선을 저 농도로 도핑된 드레인(LDD) MOSFET와 비교 분석하였다. 또한 TCAD의 유용성을 조사하여 시뮬레이터로서 적합함과 나노구조 소자에서의 스켈링이론의 적합함을 보았다.