• 제목/요약/키워드: I-V characteristic

검색결과 393건 처리시간 0.028초

비휘발성 메모리 소자의 Gate-Blocking Layer 적용을 위한 $TiO_2$ 박막 특성 (Characteristic of $TiO_2$ Thin Film for Nonvolatile Memory Device's Gate-Blocking Layer)

  • 최학모;이광수;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.199-200
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    • 2007
  • 본 논문에서는 $SiO_2$ Gate 유전체를 대체할 재료의 하나인 $TiO_2$, Gate 유전체의 기판 증착 온도에 따른 특성을 알아보고자 한다. 디바이스의 고집적화가 높아짐에 따라 얇은 두께의 Gate 유전체의 절대적인 필요에 따라 두께를 최소화하면서 유전율은 높아 전기적 특성이 우수한 소재를 찾게 되었다. 본 논문의 실험에서는 비휘발성 메모리 소자 제작시 Gate Blocking Layer 적용을 위해 High-k 물질인 $TiO_2$, 박막 증착 실험을 하였고, APCVD 방법을 사용하여 성장하였다. 증착 온도에 따른 I-V 특성을 분석하고 그에 따른 소자의 물리적 구조를 SEM을 통해 확인하면서 소자 제작시 최적의 온도를 찾고자 하였다.

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분석적 모델을 이용한 Floated Field Plate구조가 있는 소자의 시뮬레이션 개선 (Improvement for Simulation of Device equipped with Heated Field Plate Using Analytic Model)

  • 변대석;김한수;최연익;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.1283-1285
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    • 1993
  • A new simulation method for a device including the Floated Field Plate(FFP) is proposed. The external resistance is connected with FFP in order to simulate FFP as a electrode. The numerical I-V characteristic obtained from MEDICI simulation shows fairly good results such as low leakage current and abrupt breakdown voltage curve. The convergence is improved conveniently compared with conventional method which utilize heavily-doped poly silicon as a electrode.

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선대 평판형 플라즈마장치의 코로나 방전 및 오존발생 특성에 미치는 바이어스된 3전극의 영향 (Effect of the Biased Third Electrode of a Wire-Plate Type Plasma Reactor on Corona Discharge and Ozone Generation Characteristics)

  • 정재승;문재덕
    • 전기학회논문지
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    • 제57권4호
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    • pp.648-652
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    • 2008
  • Corona discharge and ozone generation characteristics of a wire-plate plasma reactor, with a biased third electrode, have been investigated with an emphasis on the role of the bias voltage and frequency applied on the third electrode. It was found that the wire-plate plasma reactor, with the biased third electrode, had a switching characteristic on its I-V characteristics for negative and positive discharges, which is very different from that of a conventional wire-plate plasma reactor without the third electrode. As a result, the corona discharge and ozone generation characteristics of the proposed plasma reactor could be controlled by adjusting the bias voltage and frequency of the third electrode. The corona onset and breakdown voltages, and ozone generation and yield, were increased compared with those of without the third electrode. These, however, reveal the effectiveness of the biased third electrode.

칼코게나이드 3원계 박막에서의 전기적 특성에 관한 연구 (Electrical characteristic of differential ternary chalcogenide thin films)

  • 양성준;신경;이재민;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.377-380
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

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CdTe/HgTe/CdTe구조 나노입자의 광전류 특성 (Photo current Characteristic of CdTe/HgTe/CdTe Structured Nanoparticles)

  • 김동원;조경아;김현석;박병준;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.139-140
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    • 2005
  • The photocurrent characteristics of CdTe/HgTe/CdTe structured nanoparticles are studied. CdTe/HgTe/CdTe multilayer structured nanoparticles were synthesized by colloidal method. CdTe/HgTe/CdTe multilayer structured nanoparticles were characterized by x-ray diffraction, high-resolution transmission electron microscopy(HRTEM), absorbance and photoluminescence(PL). PL spectrum of CdTe/HgTe/CdTe multilayer structured nanoparticles exhibits a strong exciton bond in the near infrared range. The I-V curves and photoresponses revealed that CdTe/HgTe/CdTe multilayer structured nanoparticles are very prospective materials for the photodetectors.

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태양광패널 모사장치의 제어방식에 따른 소신호 특성 비교 분석 (Performance Comparison of Different Solar Array Simulator Control by Ellipse Approximation)

  • 웰라와타 투시타;서영태;최성진
    • 전력전자학회논문지
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    • 제26권1호
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    • pp.16-24
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    • 2021
  • Solar array simulator (SAS) is essential equipment in testing and evaluating the power processing performance of a power conditioning system. However, the nonlinearity in the current(I)-voltage(V) characteristic makes the control loop design of SAS a challenging task. Conventionally, only the inner loop is usually considered in the control design approach. However, this study proves that the reference generation loop also interacts with the inner loop and plays a key role in the overall performance of the SAS. In this paper, the performance of voltage-mode control and impedance control, which are two of the most popular architectures for the SAS system, are reviewed and compared by multi-loop analysis.

TCAD를 이용한 채널과 도핑 농도에 따른 MOSFET의 특성 분석 (The Study on Channel and Doping influence of MOSFET using TCAD)

  • 심성택;장광균;정정수;정학기;이종인
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2000년도 춘계종합학술대회
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    • pp.470-473
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    • 2000
  • 지난 10여 년 동안 MOSFET는 전력감소, 도핑농도 증가, 캐리어 속도 증가를 위해서 많은 변화를 가져왔다. 이러한 변화를 받아들이기 위해서, 채널의 길이와 공급되어지는 전압이 감소해야만했으며, 그것으로 인해 소자가 더욱 작아지게 되었다. 그러므로 본 논문은 이러한 변화를 위해 채널의 길이와 전압에 의한 MOSFET 구조에서의 변화를 관찰하고, 드레인과 게이트 사이에서의 임팩트 이온화의 변화를 관찰하였다. 본 논문은 세 가지의 모델 즉, conventional MOSFET와 LDD(lightly doped drain) MOSFET, EPI MOSFET을 제시하였다. 게이트 길이는 0.15um, 0.075um을 사용하였고, 스케일링계수는 λ = 2를 사용하였다 스케일링방법은 Constant-Voltage 스케일링으로 하였고, TCAD를 사용하여, 스케일링에 의한 MOSFET의 특성과 임팩트 이온화, 전계를 비교 분석하였으며, 최적의 채널과 도필 농도에 대하여 분석하였다.

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동적 물성치를 고려한 V.I. 충격인자의 영향 분석 (Parameter Study for the Analysis of Impact Characteristics considering Dynamic Material Properties)

  • 임지호;송정한;허훈;박우진;오일성;최종웅
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집A
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    • pp.945-950
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    • 2001
  • Vacuum interrupters that is used in various switchgear components such as circuit breakers, distribution switches, contactors, etc. spreads the arc uniformly over the surface of the contacts. The electrode of vacuum interrupters is used sintered Cu-Cr material satisfied with good electrical and mechanical characteristics. Because the closing velocity is 1-3m/s, the deformation of the material of electrodes depends on the strain rate and the dynamic behavior of the sintered Cu-Cr material is a key to investigate the impact characteristics of the electrodes. The dynamic response of the material at the high strain-rate is obtained from the split Hopkinson pressure bar test using cylinder type specimens. Experimental results from both quasi-static and dynamic compressive tests with the split Hopkinson pressure bar apparatus are interpolated to construct the Johnson-Cook equation as the constitutive relation that should be applied to simulation of the dynamic behavior of electrodes. To evaluate impact characteristic of a vacuum interrupter, simulation is carried out with five parameters such as initial velocity, added mass of a movable electrode, wipe spring constant, initial offset of a wipe spring and virtual fixed spring constant.

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Nd:YAG 레이저로 표면처리된 ITO를 전극으로 한 유기EL 소자의 특성 (Surface treatment of ITO with Nd:YAG laser and OLED device characteristic)

  • 노임준;신백균;김형권;김용운;임응춘;박강식;정무영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1359-1360
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    • 2006
  • lTO(Indium-Tin-Oxide) was used as anode material for OLED. Characteristics of ITO have great effect on efficiency of OLEDS(Organic light emitting diodes). ITO surface was treated by Nd:YAG laser in order to improve its chemical properties, wettability, adhesive property and to remove the surface contaminants while maintaining its original function. In this study, main purpose was to improve the efficiency of OLEDs by the ITO surface treatment: ITO surface was treated using a Nd:YAG(${\lambda}=266nm$, pulse) with a fixed power of 0.06[w] and various stage scanning velocities. Surface morphology of the ITO was investigated by AFM. Test OLEDs with surface treated ITO were fabricated by deposition of TPD (HTL), Ald3 (ETL/TML) and Al (cathode) thin films. Device performance of the OLEDs such as V-I-L was investigated using Source Measurement Unit (SMU: Keithly. Model 2400) and Luminance Measurement (TOPCON. BM-8).

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브이용 전력시스템 설계 및 분석 (Design and Analysis of Power System for Buoy)

  • 조관준;유희한;국승기;오진석
    • 한국항해항만학회지
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    • 제31권3호
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    • pp.229-233
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    • 2007
  • 본 논문은 브이용 PV 시스템 성능과 최대전력점추적기의 알고리즘에 대하여 기술하고자 한다 현재 운영되고 있는 브이는 대부분 태양광을 활용한 독립형 전력 시스템을 이용하고 있다. 이러한 태양광 전력 시스템은 직류 출력 특성을 가지고 있으며 직류 버스와 연결된다. 태양광 전지판의 I-V 출력 특성은 일사량, 전지판의 온도에 따라 변화하며 태양광 전지 마다 그 특성이 각기 다르게 나타나기 때문에 태양광 전지는 최대전력추적방식의 알고리즘에 의해 운영되어야 한다. 이에 본 논문은 태양광 전지의 특성, 최대전력추적방식, 태양광 전지판의 최적경사각을 논의하고자 한다.