• The Journal of the Acoustical Society of Korea
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• v.31 no.5
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• pp.273-279
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• 2012

In this thesis, a nonlinear compression fitting method was studied for each frequency channel of a 64 channel digital hearing aid. Unlike conventional fitting formula method done from the result of the hearing loss test, the present fitting method uses the auditory threshold of sound pressure measured near the tympanic membrane while ITE (In-The-Ear) hearing aid is fitted into the user's ear canal. Also, the spectral distribution of the voice sound pressure was used for realizing of output sound pressure compression curves against input sound pressure level. Theoretical research results of FFT-iFFT compression algorithm has been evaluated by experimental gain measurements at each different input sound pressure level 50 dB, 70 dB, 90 dB respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.614-615
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• 2016

I studied electrical coupling of monolithic 3D inverter(M3D-INV) consisting of Junctionless FET(JLFET). If the thickness of Inter Layer Dielectric (ILD) between top JLFET and bottom JLFET is less than 50nm, current-voltage characteristic of top JLFET is rapidly changed by the gate voltage of bottom JLFET. Therefore, you have to consider about the electrical interaction according to the thickness between top JLFET and bottom JLFET in M3D-INV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.368-368
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• 2010

Using TFTs crystallized by MICC and ELA, electron mobility and threshold voltage were measured according to various substrate temperature from $-40^{\circ}C$ to $100^{\circ}C$. Basic curve, $V_G-I_D$, is also measured under various stress time from 1s to 10000s. Consequently, due to the passivation effect and number of grains, mobility of MICC is varied in the range of -8% ~ 7.6%, while that of ELA is varied from -11.04% ~ 13.25%. Also, since $V_G-I_D$ curve is dominantly affected by grain size, active layer interface, the graph remained steady under the various gate bias stress time from 1s to 10000s. This proves the point that MICC can be alternative technic to ELA.

• Journal of Korea Multimedia Society
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• v.22 no.9
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• pp.992-999
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• 2019

In this paper, I lay the foundation for creating a multiscale atlas that characterizes cerebrovasculature structural changes across the entire brain of a mouse in the Knife-Edge Scanning Microscopy dataset. The geometric reconstruction of the vascular filaments embedded in the volume imaging dataset provides the ability to distinguish cerebral vessels by diameter and other morphological properties across the whole mouse brain. This paper presents a means for studying local variations in the small vascular morphology that have a significant impact on the peripheral nervous system in other cerebral areas, as well as the robust and vulnerable side of the cerebrovasculature system across the large blood vessels. I expect that this foundation will prove invaluable towards data-driven, quantitative investigations into the system-level architectural layout of the cerebrovasculature and surrounding cerebral microstructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.944-946
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• 1998

We evaluated cell survivability by changing RLC value on HV impulse network. When the L value is changed from 0 to 10mH in this circuit. we found that cell survivability is shown large decline with 4mH of L value. I respect to this result, when waveshapes of oscillatory decay are presented along the variation of L value in RLC circuit, we analyzed whether discharge waveform properties have an effect on sterilization ratio, and measured threshold voltage as the minimum peak voltage of a single pulse which can sterilize cells. Finally, we found that the sterilization effect was related to number of threshold voltage waveforms being applied.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.130-133
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• 2010

This paper presents a study of the influence of variation of counter doping thickness on short channel effect in symmetric double-gate (DG) nano MOSFETs. Short channel effects are estimated from the computed values of current-voltage (I-V) characteristics. Two dimensional Quantum transport equations and Poisson equations are used to compute DG MOSFET characteristics. We found that the transconductance ($g_m$) and the drain conductance ($g_d$) increase with an increase in p-type counter-doping thickness ($T_c$). Very high value of transconductance ($g_m=38\;mS/{\mu}m$) is observed at 2.2 nm channel thickness. We have established that the threshold voltage of DG MOSFETs can be tuned by selecting the thickness of counter-doping in such device.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.10
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• pp.4160-4176
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• 2015

Data compression like image and video compression has come a long way since the introduction of Compressive Sensing (CS) which compresses sparse signals such as images, videos etc. to very few samples i.e. M < N measurements. At the receiver end, a robust and efficient recovery algorithm estimates the original image or video. Many prominent algorithms solve least squares problem (LSP) iteratively in order to reconstruct the signal hence consuming more processing time. In this paper non-iterative threshold based recovery algorithm (NITRA) is proposed for the recovery of images and videos without solving LSP, claiming reduced complexity and better reconstruction quality. The elapsed time for images and videos using NITRA is in ㎲ range which is 100 times less than other existing algorithms. The peak signal to noise ratio (PSNR) is above 30 dB, structural similarity (SSIM) and structural content (SC) are of 99%.

• Journal of Ginseng Research
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• v.21 no.2
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• pp.109-114
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• 1997

The effect of total saponin fraction of Ginseng injected intrathecally (i.1.) or in- tracerebroventricularly (i.c.v.) on the antinociception induced by D-$Pen^{2,5}$- enkephalin (DPDPE) ad ministered i.c.v. was studied in ICR mice in the present study. The antinociception was assessed by the tail-flick test. Total saponin fraction at doses 0.1 to 1.0 $\mu\textrm{g}$, which administered i.t. Alone did not affect the latencies of tail-flick threshold, attenuated dose-dependently the inhibition of the tail-flick response induced by i.c.v. administered DPDPE (10 $\mu\textrm{g}$). However, total saponin fraction at doses 1 to 20 $\mu\textrm{g}$, which administered i.c.v. Alone did not affect the latencies of the tail-flick response, did not affect i.c.v. administered DPDPE (10 $\mu\textrm{g}$)-induced antinociception. The duration of antagonistic action of total saponin fraction against DPDPE-induced antlnociception was lasted at least for 6 hrs. Various doses of ginsenosides Rd, but not $\Rb_2$, Rc, Rg1, and $\Rb_1$ and Re, injected i.t. Dose-dependently attenuated antinociception induced by DPDPE administered i.c.v. Our results indicate that total saponin fraction injected spinally appears to have antagonistic action against the antinociception induced by supraspinally applied DPDPE. Ginsenoside Rd appears to be responsible for blocking j.c.v. administered DPDPE-induced antinociception. On the other hand, total ginseng fraction, at supraspinal sites, may not have an antagonistic action against the antinociception induced by DPDPE.

• Journal of Ocean Engineering and Technology
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• v.14 no.3
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• pp.78-83
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• 2000

In this study, CT specimens were prepared from AST SA516 Gr. 70 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at 25$^{\circ}C $, -60$^{\circ}C $, -80$^{\circ}C $ and -100$^{\circ}C $ and in the range of stress ratio of 0.05, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ${\delta} K_{th}$ in the early stage of fatigue crack growth (Region I) and stress intensity factor range $\delta $K in the stable of fatigue crack growth (Region II) were increased in proportion to descending temperature. It was assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN -$\delta $K in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It was assumed that the fatigue crack growth rate da/dN is rapid in proportion to descending temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.