• 한국수소및신에너지학회논문집
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• 제1권1호
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• pp.40-47
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• 1989

The sulfur-iodine thermochemical water splitting process of GA(General atomic) cycle was studied to produce hydrogen from water by $H_2-I_2-SO_2$ reactions. The experimental scale was 500g based on iodine. The reaction took 100 minutes, products could be separated two liquid phases due to their density difference:HI solution had a density of 2.39~2.61g/cc, and $H_2SO_4$ solution had 1.37~1.38g/cc. The condition of reaction was when weight ratio of $I_2/H_2O$ was 2/1 resulting in good phase separation and productivity.

• Journal of Astronomy and Space Sciences
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• 제25권1호
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• pp.25-32
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• 2008

태양활동 극대기인 2000년의 ACE 위성 태양풍 관측자료를 이용한 행성간 충격파의 목록에서 충격파 유도체 따라 행성간 충격파를 분류하고 충격파 유도체별 물리적 특성을 조사하였다. 51개의 행성간 충격파 중에서 대부분은 자기구름 및 Ejecta로 대표되는 ICME와 고속풍(HSS)에 의해서 유도되었다. 산소이온비(O7/O6)로부터 유도된 온도 및 Thermal index($I_{th}$ 지수) 값 분석에 따르면, ICME는 태양 코로나의 고온물질 영역으로부터 생성됨을 알 수 있다.

• Current Photovoltaic Research
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• 제8권2호
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• pp.60-65
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• 2020

In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiO_x (Cu:NiO_x) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI₃) perovskite solar cell. The transmittance and thickness of NiO_x HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiO_x thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiO_x HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2437-2443
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• 2024

This work synthesized four glass samples with a fixed ratio of PbO to Na₂O and a variable ratio of BaO to B₂O₃. The linear attenuation coefficient (LAC) (μ, cm^-1) and additional attenuator parameters were determined experimentally using a semiconductor detector and different gamma sources. The comparison was carried out between the experimental and the XCOM calculated results, with good agreement emerging between the two results. The impacts of the BaO substituting for the B₂O₃ on fabricated PNBB glasses' radiation shielding properties were discussed. By increasing the BaO substitution concentration between 10 and 25 mol.%, the LAC μ values (cm^-1) increased by 76.60 %, 13.81 %, 12.56 %, and 12.52 % for the respective γ-ray energies of 0.059, 0.662, 1.173, and 1.332 MeV. The μ value reduction with raised gamma energy values increased the values of the calculated half-value thickness (Δ_0.5) as a result of the μ and Δ_0.5 values' reverse proportionality. Other shielding parameters such as the lead equivalent thickness (Δ_eq) and radiation protection efficiency were also determined for the present PNBB glass samples.

• 한국재료학회지
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• 제32권9호
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• 한국자동차공학회논문집
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• 제3권1호
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• pp.65-75
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• 1995

The present study was investigated combustion characteristics of methane-air mixtures at stratified charge in a constant volume combustion chamber. The results indicated that even the vety lean mixture, which is normally not flammable in single chamber type, could be burned within. a comparatively short time by using sub-chamber with stratified charge method. And the lean inflammability limit of mixture in a main chamber was about ($\phi_m$cr=O.46, when the equivalence ratio of a sub-chamber was $\phi_s$= 1.0. Initial time of pressure increase and total burning times were decreased and maximum combustion pressure. was increased as the equivalence ratio of both sub and main chamber approached unity. Specifically, initial time of pressure increase and total burning times were greatly affected rather by. the equivalence ratio of sub-chamber than that of main chamber. The maximum combustion pressure was little affected if the total equivalence ratio lies in the same range.

• 한국정보과학회논문지:시스템및이론
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• 제36권5호
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• pp.412-421
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• 2009

NAND 플래시 메모리는 특성상 덮어쓰기 연산이 불가능하기 때문에 지움 연산이 선행되어야 하므로 I/O 처리 속도가 느려지게 되어 성능저하의 원인이 된다. 또한 지움 횟수가 제한적 이어서 지움 연산이 빈번히 발생하게 되면, NAND 플래시 메모리의 수명이 줄어든다. 이러한 문제점을 해결하기 위해 NAND 플래시 메모리의 특성을 고려한 쓰기 지연 기법을 사용하면, 쓰기 횟수가 줄어들어 I/O 성능 향상에 도움이 되지만, 캐시 적중률이 낮아진다. 본 논문은 NAND 플래시 메모리 파일 시스템을 위한 더블캐시를 활용한 페이지 관리 정책을 제안한다. 더블 캐시는 실질적인 캐시인 Real Cache와 참조 페이지의 패턴을 관찰하기 위한 Ghost Cache로 구성된다. 이 정책은 Ghost Cache에서 쓰기를 지연함으로써 Real Cache에서의 적중률을 유지할 수 있고, Ghost Cache를 Dirty 리스트와 Clean 리스트로 구성하여 Dirty 페이지에 대한 탐색 시간을 줄임으로써 쓰기 연산 성능을 높인다. 기존 정책들과의 성능을 비교한 결과 제안된 정책이 기존 정책들에 비해 평균적으로 적중률은 20.57%, 그리고 I/O 성능은 20.59% 우수했고, 쓰기 횟수는 30.75% 줄었다.

• 접착 및 계면
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• 제21권4호
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• pp.143-155
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• 2020

Sol-Gel 공정을 통해서 제조되는 유-무기 하이브리드 화합물들은 방청 코팅, 방빙 코팅(Anticing), 자가 세정 코팅, 반사 방지 코팅 등과 같은 기능성 코팅 재료로 널리 사용되어져 왔다. 특히 소수성 코팅 표면을 제조하기 위해서는 코팅표면의 표면에너지가 낮고 코팅 표면의 조도를 제어가 요구된다. 표면에너지와 표면 조도를 조절하는 전형적인 공정은 in-situ fabrication 공정, 'Pre-fluorinating/Post-roughening', 'Pre-roughening/ Post-fluorinating이다. 본 연구에서는 in-situ fabrication 공정인 Particle-Binder 공정을 이용해서 소수성 코팅표면을 제조하였다. 3관능기 유기실란화합물과 불소 함유 유기실란 화합물과의 가수분해 및 축합반응을 통해 제조된 불소함유 유-무기 하이브리드를 바인더로 사용하여서 무기물 나노입자와 혼합하여 소수성 코팅액을 제조하고 유리 기재 위에 스핀코팅 후 열건조하여서 코팅막을 제조하였다. 바인더인 유-무기 하이브리드 화합물의 불소 함유 실란화합물의 첨가량, 첨가순서, 무기물 나노입자 첨가량에 따른 코팅막의 물성 변화를 조사하였다. 분석결과 불소 함량이 10 wt%인 유-무기 하이브리드 화합물(GPTi-HF10)을 바인더로 사용하여서 제조된 코팅막이 가장 소수성이 우수하였으며 수접촉각은 (107.52 ± 1.6°), 이 바인더와 무기물 나노입자의 무게비가 1:3인 경우(GPTi-HF10-MS 3.0)에 가장 높은 수접촉각(130.84±1.99°)을 나타내었다.

• 한국분무공학회지
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• 제2권4호
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• pp.7-14
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• 1997

Laser Raman scattering method has been applied to measure equivalence ratio of methane/air mixture in injected spray. We used high power KrF excimer laser$(\lambda=248nm)$ and a high gain ICCD camera to capture low intensity signal. Raman shifts and Raman scattering cross -sections of $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4\;and\;C_3H_8$ are measured precisely. Our results show an excellent agreement with those of other groups. Mole fraction measurement of $O_2\;and\;N_2$ from air shows that $O_2:N_2=0.206:0.794$. We used gas injector which was operated at 1 bar. Methane is used as a fuel. Spray region is $10mm\times37mm$ and this region is divided into 80 points. In Raman signals are obtained and ensemble averaged for each point. 3-d and contour plot of distribution of equuivalence ratio is presented. Our measured results show that the equivalence ratio of methane/air mixture in methane-rich region is reasonable. However, more study is necessary for methane-lean region because background noise level is almost same as Raman intensity of methane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.