• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.1
• /
• pp.47-56
• /
• 1999

As the density of logic gates of VLSI chips has rapidly increased, more number of I/O pins has been required. This results in bigger package size and higher packager cost. The package cost is higher than the cost of bare chips for high I/O count VLSI chips. As the density of logic gates increases, the reduction method of the number of I/O pins for a given complexity of logic gates is required. In this paper, we propose the novel I/O interface circuit using CTR (Constant-Transition-Rate) code to reduce 50% of the number of I/O pins. The rising and falling edges of the symbol pulse of CTR codes contain 2-bit digital data, respectively. Since each symbol of the proposed CTR codes contains 4-bit digital data, the symbol rate can be reduced by the factor of 2 compared with the conventional I/O interface circuit. Also, the simultaneous switching noise(SSN) can be reduced because the transition rate is constant and the transition point of the symbols is widely distributed. The channel encoder is implemented only logic circuits and the circuit of the channel decoder is designed using the over-sampling method. The proper operation of the designed I/O interface circuit was verified using. HSPICE simulation with 0.6 m CMOS SPICE parameters. The simulation results indicate that the data transmission rate of the proposed circuit using 0.6 m CMOS technology is more than 200 Mbps/pin. We implemented the proposed circuit using Altera's FPGA and confimed the operation with the data transfer rate of 22.5 Mbps/pin.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.4
• /
• pp.9-15
• /
• 2006

This paper shows the impedance profile of PEEC(Partial Equivalent Electrical Circuit) PDN(Power Distribution Networks) including core and I/O circuit. Through the simulated results, we find that the core power noise having connection with I/O power is affected by I/O switching. Also, using designed $74{\times}5inch$ DLL(Delay Locked Loop) test board, we analyzed the effect of power noise on operation region of chip. Jitter of a DLL measure for frequency of $50{\sim}400MHz$ and compared with impedance obtained result of simulation. Jitter of a DLL are increased near about frequency of 100MHz. It is reason that the resonant peak of PDNs has an impedance of more the 1ohm on 100MHz. we present the impedance profile of a chip and board for the decoupling capacitor reduced the target impedance. Therefore, power supply network design should be considered not only decoupling capacitors but also core switching current and I/O switching current.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.6 s.360
• /
• pp.89-93
• /
• 2007

This paper presents the design and the implementation of input/output (I/O) interface circuits for 2.5 Gbps operation in a 3.3V 0.35um CMOS technology. Due to the differential transmission technique and low voltage swing, LVDS(low-voltage differential signaling) has been widely used for high speed transmission with low power consumption. This interface circuit is fully compatible with the LVDS standard. The LVDS proposed in this paper utilizes a telescopic amplifier. This circuit is operated up to 2.3 Gbps. The circuit has a power consumption of 25. 5mW. This circuit is designed with Samsung $0.35{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.471-477
• /
• 2014

In this paper, a modeling and co-simulation methodology is proposed to predict the radiated electromagnetic interference (EMI) from on-chip switching I/O buffers. The output waveforms of I/O buffers are simulated including the on-chip I/O buffer circuit and the RC extracted on-chip interconnect netlist, package, and printed circuit board (PCB). In order to accurately estimate the EMI, a full-wave 3D simulation is performed including the measurement environment. The simulation results are compared with near-field electromagnetic scan results and far-field measurements from an anechoic chamber, and the sources of emission peaks were analyzed. For accurate far-field EMI simulation, PCB power trace models considering IC switching current paths and external power cable models must be considered for accurate EMI prediction. With the proposed EMI simulation model and flow, the electromagnetic compatibility can be tested even before the IC is fabricated.

• ETRI Journal
• /
• v.37 no.1
• /
• pp.97-106
• /
• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.2
• /
• pp.114-126
• /
• 2013

In this paper, we present a set of methodologies to model the electromagnetic susceptibility (EMS) testing of I/O buffers for mobile system memory based on the bulk current injection (BCI) method. An efficient equivalent circuit model is developed for the current injection probe, line impedance stabilization network (LISN), printed circuit board (PCB), and package. The simulation results show good correlation with the measurements and thus, the work presented here will enable electromagnetic susceptibility analysis at the integrated circuit (IC) design stage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.687-690
• /
• 2004

Fabrication and characterization of dye-sensitized TiO2 solar cells(DSSC) consisting of spray-coated TiO2 electrode, an electrolyte containing I-/I3- redox couple, and a Pt-coated counter electrode carried out, using mainly FE-SEM and solar simulator. Also, effect of rapid thermal annealing(RTA) temperatue on I-V curves of DSSCS consisting of approximately 10m thickness and $5{\times}5mm2$ active area. No significant difference in the apparent size of TiO2 clusters was observed with increasing RTA temperature. Also, an open circuit voltage(Voc) of approximately 0.70V and a short-circuit photocurrent(Jsc) of 8 to 12mA/cm2 were observed in the TiO2 solar cell. With increasing RTA temperature upto 550oC, photocurrent density of dye-sensitized solar cells was enhanced, leading to enhancing the efficiency of dye-sensitized solar cells having Pt-electroplated counter electrode.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.731-734
• /
• 2005

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low power consumption at the same time. Maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, we performed the layout high speed I/O interface circuit with the low triggered ESD protection device in one-chip.

• Journal of IKEEE
• /
• v.10 no.2 s.19
• /
• pp.141-148
• /
• 2006

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low signal swing range, maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD Phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, The high speed I/O interface circuit with the low triggered ESD protection device in one-chip was designed.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.12 s.354
• /
• pp.23-32
• /
• 2006

Fast and accurate power bus design (FAPUD) method for multi-layers high-speed digital boards is devised for the power supply network design tool for accurate and precise high speed board. FAPUD is constructed, based on two main algorithms of the PBEC (Path Based Equivalent Circuit) model and the network synthesis method. The PBEC model exploits simple arithmetic expressions of the lumped 1-D circuit model from the electrical parameters of a 2-D power distribution network. The circuit level design based on PBEC is carried with the proposed regional approach. The circuit level design directly calculates and determines the size of on-chip decoupling capacitors, the size and the location of off-chip decoupling capacitors, and the effective inductances of the package power bus. As a design output, a lumped circuit model and a pre-layout of the power bus including a whole decoupling capacitors are obtained after processing FAPUD. In the tuning procedure, the board re-optimization considering simultaneous switching noise (SSN) added by I/O switching can be carried out because the I/O switching effect on a power supply noise can be estimated over the operation frequency range with the lumped circuit model. Furthermore, if a design changes or needs to be tuned, FAPUD can modify design by replacing decoupling capacitors without consuming other design resources. Finally, FAPUD is accurate compared with conventional PEEC-based design tools, and its design time is 10 times faster than that of conventional PEEC-based design tools.