• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.339-341
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• 2007

Soft ferromagnetic materials are very useful for many sensors using magnetic materials with high permeability, low coercivity and low hysteresis loss. Among them, FeCoSiBNi amorphous magnetic films show us a good impedance change(about 3.05%/Oe, at 12MHz) by the exterior magnetic field in this experiment. These are produced by rapid solidification from the melt and the material is ejected in a jet from a nozzle and quenched in a stream of liquid. After that, we make them a shape of wire with different sizes of width. Thus, we can find that the impedance change (122.16%, at 12MHz) is occurred and the fabricated magnetic wire has the characteristics of good sensor element.

• Journal of Power Electronics
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• v.18 no.6
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• pp.1634-1641
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• 2018

This study focuses on a high-performance direct active and reactive power controller design that is successfully applicable to three-phase pulse width modulation (PWM) AC/DC converters used in renewable distributed energy generation systems. The proposed controller can overcome the sluggish transient dynamic response of conventional controllers to rapid power command changes. Desired active and reactive powers can be thoroughly obtained at the end of each PWM period through a deadbeat solution. The proposed controller achieves an exact nonlinear cross-coupling decoupling of system power without using a predefined switching table or bang/bang hysteresis control. A graphical and analytical analysis that naturally leads to a control voltage vector selection is provided to confirm the finding. The proposed control strategy is evaluated on a 3 kW PWM AC/DC converter in the simulation and experiment.

• Journal of Drive and Control
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• v.10 no.4
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• pp.22-28
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• 2013

Mechanical and electrical properties of a DDV(Direct Drive servo Valve) with electric feedback are analysed via reverse analysis technique in this work. The DDV is disassembled and mechanical parameters, such as spool mass, spring stiffness and port size are identified. The servo amplifier, which is built in the valve, is reversely analysed and the control scheme and gains for several control actions are also identified. The electrical feedback for spool displacement improves much better the valve performance, such as hysteresis and dynamic bandwidth frequency, than an ordinary mechanical feedback valve. Integrating control action with very large gain was adopted in the valve amplifier, and it seemed to give high performance.

• Journal of Magnetics
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• v.18 no.1
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• pp.50-56
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• 2013

In this paper, the 6-switch inverter for the Flux-Reversal Motor (FRM) has been presented and compared to the 4-switch inverter for the FRM, which is more popular in cost effective applications. To analyze the FRM, we adopted the two-dimensional time-stepped voltage source finite element method (FEM) that uses the actual pulse width modulation (PWM) voltage waveforms as the input data. As the FRM characteristic analysis of actual pwm voltage input, the torque ripples and iron losses (eddy current and hysteresis loss) of the FRM can be precisely calculated. With the simulated and experimental results, the performance and limitations of the 4-switch FRM which is the cost effective drive compared to the 6-switch FRM drive are provided in more detail.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.1
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• pp.46-52
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• 1999

A new current controlled PWM t'||'&'||'pound;rlmique with NPC(Neutral Point Qarll)ed) structure is IrOIX>Sed in this paper. A current controlled PWM technique with neutral-JXlint-cIamped pulse-width modulation inverter composed of main switching devices which operates as switch for PWM and auxiliary switching devices to clamp the output terminal potential to the neutral point potential is described. The proposed current controller has a first and second current band The switching pattern will be made by the first current band. According to the second current band, the output state of the switching pattern is changed into positivee and negative state. This inverter output contains less hanronic content and lower switching frequency than that of conventional current controlled PWM technique at the same current limit. Thbe induction machine drive with proposed technique is investigated by commputer simulation.

• Earthquakes and Structures
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• v.22 no.6
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• pp.539-548
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• 2022

Steel plate shear walls (SPSWs) are one of the most important and widely used lateral load-bearing systems. The reason for this is easier execution than reinforced concrete (RC) shear walls, faster construction time, and lower final weight of the structure. However, the main drawback of SPSWs is premature buckling in low drift ratios, which affects the energy absorption capacity and global performance of the system. To address this problem, two groups of SPSWs under cyclic loading were investigated using the finite element method (FEM). In the first group, several series of circular rings have been used and in the second group, a new type of SPSW with concentric circular rings (CCRs) has been introduced. Numerous parameters include in yield stress of steel plate wall materials, steel panel thickness, and ring width were considered in nonlinear static analysis. At first, a three-dimensional (3D) numerical model was validated using three sets of laboratory SPSWs and the difference in results between numerical models and experimental specimens was less than 5% in all cases. The results of numerical models revealed that the full SPSW undergoes shear buckling at a drift ratio of 0.2% and its hysteresis behavior has a pinching in the middle part of load-drift ratio curve. Whereas, in the two categories of proposed SPSWs, the hysteresis behavior is complete and stable, and in most cases no capacity degradation of up to 6% drift ratio has been observed. Also, in most numerical models, the tangential stiffness remains almost constant in each cycle. Finally, for the innovative SPSW, a relationship was suggested to determine the shear capacity of the proposed steel wall relative to the wall slenderness coefficient.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.715-720
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• 2016

This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.738-750
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• 2017

In this paper, carrier-based pulse width modulation (CBPWM), space vector PWM (SVPWM) and reduced switching losses PWM (RSLPWM) for the three-level neutral point clamped (NPC) inverter are introduced. In the case of the neutral point (NP) potential (NPP) offset, an asymmetric disposition PWM (ASPDPWM) strategy is proposed, which can output PWM sequences correctly and suppress the lower order harmonics of the inverter effectively. An NPP balance strategy based on carrier based PWM (CBPWM) is analyzed. A hybrid modulation strategy combining RSLPWM and the NPP balance based on CBPWM is proposed, and hysteresis control is adopted to switch between the two modulation strategies. An experimental prototype of the three-level NPC inverter is built. The effectiveness of the hybrid modulation is verified with a resistance-inductance load and a permanent magnetic synchronous motor (PMSM) load, respectively. The experimental results show that reduced switching losses and an acceptable NPP can be effectively achieved in the hybrid modulation strategy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.