• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.213-216
• /
• 2002

A double-heterostructure AIGaAs/GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor) using digital recess has been successfully realized. Futhermore, the differences of gm,nax, fT, fmax between two samples are as low as 0.62%, 1.58% and 2.56 % respectively. Experimental results are presented demonstrating the etch rate and Process invariability with respect to hydrogen peroxide and acid exposure times with uniformity among devices on a sample.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.3
• /
• pp.377-384
• /
• 1999

The corrosion of copper in $H_2$$SO_4$ $-H_2$$O_2$ etching solutions with amines was investigated at various flow rates (v). Amine additives give a retardation of $H_2$$O_2$ decompositions, increases in both corrosion rates and etch factor, and a protection of etched copper surfaces. However n-alkylamine additives acted as corrosion inhibitors at v < 10cm/s, those acted as corrosion accelerators at v of 10-220cm/s. The maximum corrosion rate was obtained with about 0.1 molal concentration of additives. Steric effects of substituted groups suppressed the acceleration of copper corrosion. The increases in both corrosion rates and flow rates gave the increase in etch factor. Corrosion rates with n-alkylamine increased in the order of ethylamine < n-propylamine < n-butylamine, those with butylamine isomers tert- < sec- < iso- < n-butylamine, and those with amine additives of different number of substituted groups tri- < di- < mono-n-propylamine, respectively.

• Journal of Convergence for Information Technology
• /
• v.10 no.6
• /
• pp.28-34
• /
• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.4
• /
• pp.132-137
• /
• 2018

Although the number of chemical accidents has been declining since the Chemical Control Act of 2015, there have been repeated occurrences of similar types of accidents at printed circuit board (PCB) manufacturing facilities. These accidents were caused by the overflow of hydrochloric acid and hydrogen peroxide, which are toxic chemicals used in the printed circuit board manufacturing process. An analysis of the $Cl^-$ content to identify the cause of the accident showed that in the mixed route of hydrochloric acid and hydrogen peroxide, which are accidental substances, the $Cl^-$ concentration was 66.85 ppm in the hydrogen peroxide sample. Through reaction experiments, it was confirmed that the deformation of a PVC storage tank and generation of chlorine gas, which is a toxic gas, occurred due to reaction heat occurring up to $50.5^{\circ}C$. This paper proposes a facility safety management plan, including overcharge, overflow prevention, leak detection device, and separation tank design for mixing prevention in printed circuit board manufacturing facility etch process. To prevent the recurrence of accidents of the same type, the necessity of a periodic facility safety inspection and strengthening of the safety education of workers was discussed.

• Journal of Electrochemical Science and Technology
• /
• v.2 no.3
• /
• pp.157-162
• /
• 2011

We report a simple route for synthesizing multi-dimensional structured silicon anode materials from commercially available bulk silicon powders via metal-assisted chemical etching process. In the first step, silver catalyst was deposited onto the surface of bulk silicon via a galvanic displacement reaction. Next, the silver-decorated silicon particles were chemically etched in a mixture of hydrofluoric acid and hydrogen peroxide to make multi-dimensional silicon consisting of one-dimensional silicon nanowires and micro-scale silicon cores. As-synthesized silicon particles were coated with a carbon via thermal decomposition of acetylene gas. The carbon-coated multi-dimensional silicon anodes exhibited excellent electrochemical properties, including a high specific capacity (1800 mAh/g), a stable cycling retention (cycling retention of 89% after 20 cycles), and a high rate capability (71% at 3 C rate, compared to 0.1 C rate). This process is a simple and mass-productive (yield of 40-50%), thus opens up an effective route to make a high-performance silicon anode materials for lithiumion batteries.

• Applied Chemistry for Engineering
• /
• v.24 no.1
• /
• pp.67-71
• /
• 2013

$FeCl_3$ has been used as an etchant for metal etching such as Fe, Cu, and Al. In the process of metal etching, $Fe^{3+}$ is reducted to $Fe^{2+}$ and the etching rate becomes slow and etching efficiency decreased. Waste $FeCl_3$ etchant needs to be regenerated because of its toxicity and treatment cost. In this work, HCl was initially mixed with the waste $FeCl_3$ and then, strong oxidants, such as $O_2$ and $H_2O_2$, were added into the mixed solution to regenerate the waste etchant. During successive etching and regeneration processes, oxygen-reduction potential (ORP) was continuously measured and the relationship between ORP and etching capability was investigated. Regenerated etchant using a two vol% HCl of the total etchant volume and a very small amount of $H_2O_2$ was very effective in recovering etching capability. During the etching-regeneration process, the same oxygen-reduction potential variation cannot be repeated every cycle since concentrations of $Fe^{2+}$ and $Fe^{3+}$ ions were continuously changed. It suggested that the control of etching-regeneration process based on the etching time becomes more efficient than that of the process based on oxygen reduction potential changes.

• Analytical Science and Technology
• /
• v.19 no.5
• /
• pp.394-399
• /
• 2006

The polishing performance and the relationships of electrochemistry depending upon oxidizers and additives in the tungsten CMP slurry used in semiconductor industry were investigated. Hydrogen peroxide, ferric nitrate and potassium iodate were used as oxidizers and they showed different oxidation reactions on tungsten film depending on the kind of oxidizers and pH of slurry. The differences influenced the polishing performance. Etching reaction was predominated in the hydrogen peroxide. However, passivation reaction was prevailed in ferric nitrate and potassium iodate. TMAH and KOH raised the potential energy and removal rate of tungsten, and improved a dispersion characteristic of slurry by increasing absolute value of zeta potential. Addition of 100 ppm of poly(acrylic acid) of M.W. 250,000 improved dispersion ability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.372-373
• /
• 2006

Chemical kinetics affects Cu CMP results (removal rate, Non uniformity etc.) Because Cu is removed by chemical action. Key factors in chemical kinetics are process temperature and concentration of slurry components. In this study, Hydrogen peroxide and citric acid were selected as a oxidant and a complexing agent and Slurry were made by mixing this components. In order to study effects of Chemical Kinetics, X-ray photoelectron spectroscopy (XPS) were performed on Cu sample after etching test as concentration of citric acid and slurry temperature. Finally Cu CMP was performed as same conditions.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.88.1-88.1
• /
• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• The korean journal of orthodontics
• /
• v.40 no.5
• /
• pp.342-348
• /
• 2010

Objective: The aim of this study was to compare the shear bond strengths (SBS) of orthodontic brackets bonded to enamel with a self-etching primer after bleaching, desensitizer application and combined treatment. Methods: Forty-eight premolars were randomly divided into four groups, each with n = 12 premolar samples. The four groups were; Group1: 15% hydrogen-peroxide office bleaching agent (Illumin$\acute{e}$ Office-IO), Group 2: IO + BisBlock Oxalate Dentin-Desensitizer, Group 3: Bis Block Oxalate Dentin-Desensitizer, Group 4: No treatment (control). Twenty-four hours after bonding, the specimens were tested in SBS at a crosshead speed of 5 mm/min until the brackets debonded. The failure mode of the brackets was determined by a modified adhesive remnant index. Results: Bleaching, bleaching and desensitizer treatment, and desensitizer treatment alone all significantly reduced SBS of the orthodontic brackets ($p$ = 0.001). No statistically significant difference was found between Group 1, Group 2 and Group 3 (Group 1-Group 2, $p$ = 0.564; Group 1-Group 3, $p$ = 0.371; Group 2-Group 3, $p$ = 0.133). The predominant mode of failure for the treatment groups (Group1, Group 2 and Group 3) was at the enamel-adhesive interface leaving 100% of the adhesive on the bracket base. Conclusions: Bleaching and desensitizer treatment should be delayed until the completion of orthodontic treatment.