Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2002.06b
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- Pages.213-216
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- 2002
Digital recess etching for advanced performance of 0.25$\mu\textrm{m}$ Double-heterostructure AIGaAs/GaAs PHEMT
0-25 $\mu\textrm{m}$ gate Double-heterostructure AIGaAs/GaAs PHEMT의 성능향상을 위한 디지털 리세스에 대한 연구
Abstract
A double-heterostructure AIGaAs/GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor) using digital recess has been successfully realized. Futhermore, the differences of gm,nax, fT, fmax between two samples are as low as 0.62%, 1.58% and 2.56 % respectively. Experimental results are presented demonstrating the etch rate and Process invariability with respect to hydrogen peroxide and acid exposure times with uniformity among devices on a sample.
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