• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• 센서학회지
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• 제15권2호
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• 마이크로전자및패키징학회지
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• 제10권2호
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• pp.49-54
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• 2003

본 연구에서는 Pt/SrBi$_2$Ta$_2$O$_{9}$(SBT)/Si (MFS)와 Pt/SBT/Pt (MFM) 각각의 구조에서 수소 열처리에 의한 SBT박막의 물리, 전기적 영향에 대해 연구하였다. SBT 박막의 미세구조 및 전기적 특성은 수소 열처리 후에 SBT 박막의 손상으로 열화된다. 특히, Pt 전극에 의한 SBT 박막의 열화 현상을 연구하기 위해 각각 Si 와 Pt 위에 SBT 를 증착하여 같은 조건으로 열처리를 하였다. XRD, XPS, P-V, C-V 측정을 통해 Pt 전극 없이 SBT자체로도 수소 열처리 후에 열화 됨을 확인 할 수 있었다. 또한, 수소 열화현상이라고 하는 촉매 반응으로 SBT 열화 현상이 Pt로 가속화되었다. 이러한 현상을 방지하기 위해서 새로운 Ir 전극을 제안하여 $Ir/IrO_2/SBT/IrO_2$ 구조에서의 수소 열처리 전후 및 회복 열처리를 통해 SBT 박막의 전기적 특성을 연구하였다. P-V측정을 통해 SBT박막을 이용한 MFM구조에서 Ir이 열화 방지용 전극 물질로의 활용 가능성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.63-63
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• 1999

The stability of hydrogenated amorphous silicon (a-Si:H) films under the light soaking are very important since the applications of a-Si:H films are solar cells, color sensors, photosensors, and thin film transistors(TFTs). We found the changes of the electric conductivity and the conductivity activation energy (Ea) of a-Si:H films by argon radical annealing. The deposition rate of a-Si:H films depends on the argon radical annealing time. The optical band gap and the hydrogen contents in the a-Si:H films are changes along the argon radical annealing time. We will discuss the microscopic processes of argon radical annealing in a-si:H films.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• 한국수소및신에너지학회논문집
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• 제34권6호
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• pp.673-681
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• 2023

Hydrocarbon-based polymer membranes to replace perfluorinated polymer membranes are being continuously researched. However, hydrocarbon-based membranes have a problem in that they are less durable than fluorine-based membranes. In this study, we sought to compare the annealing effect to improve the durability of sulfonated poly(ether ether ketone) (SPEEK). After membranes formation, thermogravimetric analysis and tensile strength were measured to compare changes in membranes properties due to annealing. After manufacturing the membrane and electrode assembly (MEA), the initial performance and chemical durability was compared with unit cell operation. During the 24-hour annealing process, the strength increased due to the increase in-S-O-S-crosslinking, and the sulfonic acid group decreased, leading to a decrease in I-V performance. By annealing, the hydrogen permeability was reduced to less than 1/10 of that of the nafion membrane, and as a result, open circuit voltage (OCV) and durability was improved. The SPEEK membranes annealed for 24 hours showed higher durability than the nafion 211 membranes of the same thickness.

• The Korean Journal of Ceramics
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• 제3권2호
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• pp.96-100
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• 1997

Hydrogenated amorphous carbon films were deposited on silicon substrates by using an RF PECVD. The hydrogen/methane ratio was varied from 50% to 88% to study the effect of hytdrogen in the film on the tribological properties. The friction and wear behaviors of the deposited films were investigated by ball-on-disk type wear tester. FT-IR spectra were used to characterize the structure of the films. Tribological properties of carbon films were correlated with their structure such as ratio of "polymer-like" stretching type and that of sp2 bonding. The result showed that the annealing caused a decrease in the amount of wear of contacted $Si_3N_4$ balls and a increase in the coefficient of friction. Possible explanation for annealing effect was discussed by the hydrogen desorption.esorption.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1630-1632
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• 1997

We have investigated activation phenomena of implanted ions on silicon wafers using microwave(2.45GHz). It is found that the higher concentration of impurities makes the better activation effects by microwave annealing. We have exposed poly-Si TFTs by microwave in order to anneal and improved the device performance. Microwave activates source/drain ions and lowers the contact resistance so that the current of the poly-Si TFTs increases. In addition, the leakage current of hydrogen passivated poly-Si TFTs is decreased after microwave annealing, due to the diffusion of hydrogen ions and curing the defects in the poly-Si active channel.