Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Activation of Implanted tons by Microwave Annealing

마이크로 웨이브를 이용한 이온의 활성화 방법에 관한 연구

  • Kim, Cheon-Hong (School of Electrical Engineering, Seoul National University) ;
  • Yoo, Juhn-Suk (School of Electrical Engineering, Seoul National University) ;
  • Park, Cheol-Min (School of Electrical Engineering, Seoul National University) ;
  • Han, Min-Koo (School of Electrical Engineering, Seoul National University)
  • 김천홍 (서울대학교 공과대학 전기공학부) ;
  • 유준석 (서울대학교 공과대학 전기공학부) ;
  • 박철민 (서울대학교 공과대학 전기공학부) ;
  • 한민구 (서울대학교 공과대학 전기공학부)
  • Published : 1997.07.21
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Abstract

We have investigated activation phenomena of implanted ions on silicon wafers using microwave(2.45GHz). It is found that the higher concentration of impurities makes the better activation effects by microwave annealing. We have exposed poly-Si TFTs by microwave in order to anneal and improved the device performance. Microwave activates source/drain ions and lowers the contact resistance so that the current of the poly-Si TFTs increases. In addition, the leakage current of hydrogen passivated poly-Si TFTs is decreased after microwave annealing, due to the diffusion of hydrogen ions and curing the defects in the poly-Si active channel.

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