• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• 한국재료학회지
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• 제12권12호
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• pp.935-940
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• 2002

Magnesium-3, 6wt% Nickel alloys were fabricated by Rotation-Cylinder Method(RCM) in ambient atmosphere. The alloys were divided into two different heat-treating conditions, as-cast and thixotropic treated. Thixotropic heat treatment enhances the separation of primary hydride former of Mg and the catalytic phase of $Mg_2$Ni. Hydrogenation properties of the each alloy were evaluated and compared by PCI(Pressure-Composition Isotherm) measurement. The maximum hydrogen capacity and the reversible capacity of as -cast Mg-6wt% Ni alloy were 5.2wt% and 3.8wt% at 623k, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권6호
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• pp.236-239
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• 2002

Si nanocrystallites thin films on P-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed in several environmental gases ;It the temperature range of 400 to $800^{\circ}C$ Hydrogen passivation was then performed in the forming gas (95 % $N_2$ + 5 % $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature on nitrogen ambient-annealed Si nanocrystallites. We report the variation of photoluminescence (PL) properties of Si thin films by changing annealing temperatures and by using hydrogen passivation. The results could suggest that the origin of violet-indigo PL should be related to the Quantum size effect of Si nanocrystallite.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2013년도 제46회 KOSCO SYMPOSIUM 초록집
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• pp.109-110
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• 2013

This paper describes gas turbine combustion characteristics of synthetic natural gas which contains a small amount hydrogen content. By conducting ambient pressure high temperature combustion test at gas turbine relevant combustor geometry, the combustion characteristics such as combustion instability, NOx and CO emission, temperatures at turbine inlet, nozzle and dump plane, and flame structure from high speed OH chemiluminescence images were investigated when changing hydrogen content from zero to 5%. From the results, qualitative and quantitative relationships are derived between key aspects of combustion performance, notably NOx/CO emission and combustion instability. Natural gas containing hydrogen up to 5% does not show significant difference in view of all combustion characteristics except combustion instability. Only up to 1% hydrogen addition could not change the pressure fluctuation and phase gas between fluctuations of pressure and heat release. From the results, it can be concluded that synthetic national gas which contains 1% of hydrogen can be guaranteed for the stable and reliable operation of natural gas firing gas turbine.

• 대한안전경영과학회지
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• 제24권4호
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• pp.101-107
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• 2022

To test a flameproof enclosure for the safety certificate, a reference pressure of explosion needs to be determined. However, the explosion pressure may be changed according to relative humidity of explosive gases. Therefore, the guideline on relative humidity should be recommended for measuring the explosion pressure for accurate and reproducible testings. This study examined the relationship of explosion pressure with relative humidity of hydrogen (31 vol %)-air and acetylene (14 vol %)-air mixture gases. The explosion pressures were measured by increasing the relative humidity of the gases by 10 % from dry state to 80 % in a cylindrical explosion enclosure of 2.3 L. on ambient temperature and atmospheric pressure (1 atm). The maximum explosive pressures were remained almost constant until the relative humidity reached 10 % for the hydrogen-air mixture and 20 % for the acetylene-air mixture. However, the maximum explosive pressures linearly decreased as the relative humidity increased. Based on the results of the study, it would be recommended to use 10 % relative humidity for the hydrogen-air mixture and 20 % for the acetylene-air mixture as the critical value in testing a flameproof enclosure.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.12-16
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• 2022

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H₂ flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10^-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• 한국수소및신에너지학회논문집
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• 제30권6호
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• pp.490-498
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• 2019

The intermittent electric power supply of renewable energy can have extremely negative effect on power grid, so long-term and large-scale storage for energy released from renewable energy source is required for ensuring a stable supply of electric power. Power to gas which can convert and store the surplus electric power as hydrogen through water electrolysis is being actively studied in response to increasing supply of renewable energy. In this paper, we proposed the novel concept of hydrogen liquefaction process combined with pre-cooling process using the liquid air. It is that hydrogen converted from surplus electric power of renewable energy was liquefied through the hydrogen liquefaction process and vaporization heat of liquid hydrogen was conversely recovered to liquid air from ambient air. Moreover, Comparisons of specific energy consumption (kWh/kg) saved for using the liquid air pre-cooling was quantitatively conducted through the performance analysis. Consequently, about 12% of specific energy consumption of hydrogen liquefaction process was reduced with introducing liquid air for pre-cooling and optimal design point of helium Brayton cycle was identified by sensitivity analysis on change of compression/expansion ratio.

• 한국안전학회지
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• 제19권3호
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• pp.32-39
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• 2004

This papers describes on the experimental consideration for the intrinsically-safe explosion-proof capability of rechargeable battery's body about main item rechargeable battery and cellular phone battery which is selling in domestic that IEC(International Electrotechnical Commission) recommend the measurement of ignition limit by short circuit of rechargeable battery and temperature increase test to use a explosion grade Group IIC type of explosion-proof type apparatus test an object of hydrogen gas. Because of that there are many different results for existence or nonexistence for ignition by different company and different types. It is concluded that the maximum of self temperature increasing by spark circuit of rechargeable battery is $180^{\circ}C$ in case of Nickel-Hydrogen and $110^{\circ}C$ in case of Nickel-Cadmium. The reaction of cellular battery for external temperature have following processes. It is confirmed that the temperature of reaction is rise slantly as the ambient temperature rising, then exterior shape of one is swell up and change when the temperature of ambient reach to about $130\~140^{\circ}C$, and when reach to about $160^{\circ}C$ the battery is blown up. Therefore, it is considered that have to be in considering selection of rechargeable battery using in itself due to different ignition limits of various rechargeable battery when the portable electric containing rechargeable battery are designed, produced and used, the characteristics and the proper safety factors of devices.

• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.7-11
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• 2008

ITO (Indium Tin Oxide) thin films have been extensively studied for OLED devices because they have high transparent properties in the visible wavelength and a low electrical resistivity. These ITO films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$ and Ar+$H_2$) at $300^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon has been changed from 0.5sccm to 5sccm and from 0.01sccm to 0.25sccm respectively. The resistivity of ITO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while it is nearly constant under Ar+$H_2$. And the peak of ITO films obtained (222) and (400) orientations and the average transmittance was over 80% in the visible range. The OLED device fabricated with different ITO substrates made by configuration of ITO/$\alpha$-NPD/Alq3/LiF/Al to elucidate the performance of ITO substrate for OLED device.