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Effect of Substrate Temperature and Hydrogen Ambient Gases on the Structural and Electrical Characteristics of IGZO Thin Films  

Bae, Jang Ho (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education)
Lee, Kyu Mann (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.1, 2022 , pp. 12-16 More about this Journal
Abstract
We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.
Keywords
IGZO thin film; RF-magnetron sputtering; substrate temperature; hydrogen flow rate;
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