• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.550-551
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• 2013

Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

• Journal of Korean Society for Atmospheric Environment
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• v.24 no.3
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• pp.329-335
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• 2008

Volatile organic compounds emitted to the atmosphere can cause adverse effects on human health and participate in photochemical smog formation reactions. The destruction of a series of VOCs has been carried out by non-thermal plasma in other researches. And the characteristic of non-thermal plasma was operated at atmospheric pressure and low temperature. A new type non-thermal plasma reactor was investigated combined Glidarc plasma with water jet in this research. Also, it was found that the water-jet had an significant effect on the toluene removal efficiency. But too much water content does not favor toluene decomposition by decreasing of reaction temperature. The input toluene concentration, gas flow rate, water flow rate and specific energy input were used as experiment variables. The toluene removal efficiency, energy efficiency and specific energy input were 75.3%, 146.6 g/kWh and $1.12kWh/m^3$ at a water flow rate of 100 mL/min.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.6
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• pp.624-632
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• 2010

Perfluorocarbons (PFCs) are widely used in semiconductor industry. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetimes which cause the global warming effect. To destruct $CF_4$, a waterjet gliding arc plasma was designed and manufactured. The highest $CF_4$ destruction showed at waterjet plasma case, compared to plasma discharge only or water scrubber only, respectively. In addition, it could be known that the $CF_4$ destruction should be associated with the electron and OH radicals. The operating conditions such as waterjet flow rate, initial $CF_4$ concentration, total gas flow rate, specific energy input were investigated experimentally using a plasma waterjet scrubber. Through the parametric studies, the highest $CF_4$ destruction of 94.5% was achieved at 0.2% $CF_4$, 2.1 kJ/L SEI, 20 L/min total gas flow rate and 18.5 mL/min waterjet flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.642-644
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• 1999

We have prepared the plasma-polymerized membrane for pervaporation of organic-liquid mixtures by the plasma polymerization technique. Plasma polymerization techniques were utilized in the development of hydrophilic composite membranes having high hydrogen ion permeability and excellent dimensional stability. To develop an organic liquid permselective Membrane, suppressing membrane swearing as well as enhancing the solubility difference is impotant. the objectives of the present study are to disign a suitable membrane for an organic-mixture system by the control of the plasma-polymer solubility.

• Clean Technology
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• v.19 no.2
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• pp.113-120
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• 2013

The treatment of chemically stable perflourocompounds (PFCs) requires a large amount of energy. An energy efficient arc plasma system has been developed to overcome such disadvantage. $CF_4$, $SF_6$ and $NF_3$ were injected into the plasma torch directly, and net plasma power was estimated from the measurement of thermal efficiency of the system. Effects of net plasma power, waste gas flow rate and additive gases on the destruction and removal efficiency (DRE) of PFCs were examined. The calculation of thermodynamic equilibrium composition was also conducted to compare with experimental results. The average thermal efficiency was ranged from 60 to 66% with increasing waste gas flow rate, while DRE of PFCs was decreased with increasing gas flow rate. On the other hand, DRE of each PFCs was increased with the increasing input power. Maximum DREs of $CF_4$, $SF_6$ and $NF_3$ were 4%, 15% and 90%, respectively, without reaction gas at the fixed input power and waste gas flow rate of 3 kW and 70 L/min. A rapid increase of DRE was found using hydrogen or oxygen additional gases. Hydrogen was more effective than oxygen to decompose PFCs and to control by-products. The major by-product in the arc plasma process with hydrogen was hydrofluoric acid that is easy to be removed by a wet scrubber. DREs of $CF_4$, $SF_6$ and $NF_3$ were 25%, 39% and 99%, respectively, using hydrogen additional gas at the waste gas flow rate of 100 L/min and the input power of 3 kW.

• Journal of the Korean institute of surface engineering
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• v.42 no.5
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• pp.232-239
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• 2009

This study presented the effect of membrane thickness on hydrogen permeability. Microvoids on the surface of the membrane should not exist for the exact values of hydrogen permeability. Pd-Cu-Ni hydrogen alloy membranes were fabricated by Ni powder sintering, substrate plasma pretreatment, sputtering and Cu reflow process. And this leaded to void-free surface and dense film of Pd-Cu-Ni hydrogen alloy membrane. Hydrogen permeation test showed that hydrogen permeability increased from 2.7 to $15.2ml/cm^2{\cdot}min{\cdot}atm^{0.5}$ as membrane thickness decreased from 12 to $4{\mu}m$. This represented the similar trend as a hydrogen permeability of pure palladium membrane based on solution-diffusion mechanism.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.32-39
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• 2010

Hydrogen is sustainable energy without environment pollution. In this study, experiments and analysis of hydrogen generation from gases methanol and ethanol using cylindrical barrier discharge reactor was carried out. The discharge reactor to generate hydrogen molecules used in this work is one type of Non-thermal Plasma (NTP) reactors and neon-transformer as power source to make a plasma was used. Hydrogen concentrations were measured as parameters of applied voltage, concentrations of methanol and ethanol, and flow rates of carrier gases($N_2$). Hydrogen generation increased according to applied voltage and produced largely in case of methanol compared with ethanol. It is thought that the reason is deeply related with those different chemical structures. Energy yield of hydrogen generation in case of ethanol decreases according to increasing applied voltage, but that in case of methanol has a peak at applied voltage of 22[kV] and decreased. Specifically, hydrogen generation increased with increasing applied voltage, but low voltage was better, which is the best parameter in the aspects of energy efficiency.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2232-2237
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• 2007

Steam reforming and catalytic reforming of $CH_4$ conversion to produce synthesis gas require both high temperatures and high pressure. Non-thermal plasma is considered to be a promising technology for the hydrogen rich gas production from methane. In this study, three phase AC GlidArc plasma system was employed to investigate the effects of gas composition, gas flow rate, catalyst reactor temperature and applied electric power on the $CH_4$ and $H_2$ yield and the product distribution. The studied system consisted of three electrode and it connected AC generate power system different voltages. In this study, air was used for the partial oxidation of methane. The results showed that increasing gas flow rate, catalyst reactor temperature, or electric power enhanced $CH_4$ conversion and $H_2$ concentration. The reference conditions were found at a $O_2$/C molar ratio of 0.45, a feed flow rate of 4.9 ${\ell}$/min, and input power of 1kW for the maximum conversions of $CH_4$ with a high selectivity of $H_2$ and a low reactor energy density.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).