• 제목/요약/키워드: Hump Effect

검색결과 41건 처리시간 0.026초

차량과속방지턱의 설치기준 개발에 관한 연구 (Development of Guidelines for Installing Speed Control Humps)

  • 문무창;장명순
    • 대한교통학회지
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    • 제12권1호
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    • pp.137-149
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    • 1994
  • The objective of study is to evaluate the effect of speed control hump on traffic operation and accidents. Three sites were investigated for the change of traffic accidents before and after the hump installation. Vehicle speeds approaching the hump were also analyzed. The study revealed that not only the number of traffic accidents but also the accident severity were significantly reduced by the installation of hump. Further, different types of traffic accidents with lower severity were observed after the hump installation. For the effect of speed reduction by hump, it was found that the speeds observed at 15m upstream of hump were in the range of 36~50 percent of approaching speeds which were not affected by (ie, without) the hump. Economic analysis of hump installation showed the benefit-cost ratio of 4.3 and 11.2 at two sites. Further analysis revealed that the benefit by the accident reduction exceeds the cost by speed reduction and installation capital if AADT is below 43,150 vehicles on two lane highways. It is recommended from the study that humps should be considered on two lane highways of high accident locations for excessive speeds to reduce traffic accidents and severity.

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Suppression Techniques of Subthreshold Hump Effect for High-Voltage MOSFET

  • Baek, Ki-Ju;Na, Kee-Yeol;Park, Jeong-Hyeon;Kim, Yeong-Seuk
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권5호
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    • pp.522-529
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    • 2013
  • In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, $0.18{\mu}m$ 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.

64M DRAM의 Defect 관련 STI(Shallow Trench Isolated) NMOSFET Hump 특성 (Hump Characteristics of 64M DRAM STI(Shallow Trench Isolated) NMOSFETs Due to Defect)

  • 이형주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.291-293
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    • 2000
  • In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.

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Anomalous Subthreshold Characteristics of Shallow Trench-Isolated Submicron NMOSFET with Capped p-TEOS/SiN

  • Lee, Hyung J.
    • Transactions on Electrical and Electronic Materials
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    • 제3권3호
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    • pp.18-20
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    • 2002
  • In sub-l/4 ${\mu}{\textrm}{m}$ NMOSFET with STI (Shallow Trench Isolation), the anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel boron dopant redistribution due to the defect should be considered to improve hump characteristics besides considerations of STI comer and recess. 130

과속방지턱의 설치효과 분석 및 수직가속도에 의한 개발 연구 (A Study on the Installation Effect Analysis and for Future Develop with Vertical Acceleration of Speed Hump)

  • 금기정
    • 대한교통학회지
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    • 제14권4호
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    • pp.77-90
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    • 1996
  • Recently existing the road traffic low is requlated by hump standard, which is established throuth the actual england TRRL(Transpodt and Road Research Laboratory) experiment. The determined standard has been utilized, however, wihtout the test on of our street and its drivers driving characteristics. Even with the utilization, the appropriate before and after management, is not constituted. In Spite of minimum speed limit, in many case, the utilization itself is questionalble rather than the purpose of restraining speed limit or reducing vehicle confacts. Along with hump consideration, social attention is focused due to series of personal law suit(traffic accident) field against the negligence of local organization management. Therefore counter measure of safe transportation facility is urgently required. With consideration of above background, the purpose of this research is to develop the hump that is appropriate with our transportation environment. This can be achieved thr ugh analysis of hump effectiveness, examination of drivers awamess, facilitation/management problems, and various problems in verticle acceleration.

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보행자 통행안전성을 고려한 회전교차로의 고원식횡단보도 설치기준 연구 (A Study of the Roundabout Hump type Crosswalks Installation Criteria That Takes Into Account the Safety of Pedestrian Traffic)

  • 임창식;최양원
    • 대한토목학회논문집
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    • 제36권6호
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    • pp.1075-1082
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    • 2016
  • 본 연구에서는 과속방지턱과 연속으로 설치된 고원식횡단보도의 적정 설치간격을 산정하기 위하여 최고속도제한이 30km/h로 운영되는 회전교차로의 접근부에서 과속방지턱과 고원식횡단보도 간 서로 다른 간격을 통과하는 차량의 속도를 조사하여 연속으로 설치된 과속방지턱과 고원식횡단보도가 차량의 주행속도에 미치는 영향을 분석하였고, 고원식횡단보도의 적정 설치높이에 대한 시뮬레이션에 다음과 같은 결론을 도출하였다. 첫째, 과속방지턱과 고원식횡단보도는 차량의 속도를 저감시키는 대표적인 교통정온화 기법으로 차량의 속도를 30km/h 이하로 제어하기 위한 과속방지턱과 고원식횡단보도의 적정 간격은 30m로 나타났다. 둘째, 고원식횡단보도를 통과하는 차량의 감속도를 비교한 결과 설치 간격이 65m 이상인 경우 과속방지턱과 고원식횡단보도의 효과가 없는 것으로 나타났다. 따라서 일정 구간의 차량 속도를 제어하기 위한 과속방지턱과 고원식횡단보도의 최대설치 간격은 65m 이내로 설치하는 것이 바람직하다. 셋째, 고원식횡단보도의 설치높이는 차량의 접근부 속도가 20km/h 이하일 때 6~8cm, 30km/h일 때 8~10cm, 30km/h 이상일 때 10cm의 설치가 가장 적정한 것으로 분석되었다. 넷째, 과속방지턱과 고원식횡단보도가 설치된 구간이어도 운전자의 학습효과, 교통상황 등에 의하여 속도감소 효과가 미미한 경우가 있으므로 과속방지턱, 시케인, 초커 등 여러 가지 교통정온화 기법을 동시에 적용할 경우 속도감소 효과가 더 클 것이라 판단된다. 따라서 보행자의 안전을 도모하기 위하여 차량의 속도를 저감시킬 목적으로 교통정온화 기법을 적용하는 경우 여러 가지 기법의 복합 적용을 고려하여야 할 것이다.

RANS 모델링을 이용한 Hump 형상의 박리 유동에 대한 연구 (THE STUDY ON THE SEPARATED FLOW OF A HUMP USING RANSMODELING)

  • 이재훈;배중헌;정경진
    • 한국전산유체공학회지
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    • 제22권1호
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    • pp.8-14
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    • 2017
  • In this paper, separated flow characteristics is studied using the RANS(Reynold-averaged Navier-Stokes) modeling. The analysis is performed for the NASA's hump configuration which is the combination of a flat plate and a hump. This configuration was used in NASA's flow control workshop and it was one of validation cases for RANS and LES simulations. The separation occurs at the 65% of model length where a slot is positioned for the flow control. No flow control case and steady suction case are studied using RANS modeling. The Spalart-Allmaras model and the SST(Shear Stress Transport) model are applied and their accuracy are compared. To correlate CFD analysis with experimental data, the optimal boundary condition was investigated and the effect of a cavity around the slot is studied for the no flow case.

AC PDP에서 다양한 형태의 ${\prod}$형 금속방전유지 전극의 효과 (Effect of Various ${\prod}$Type Metal Electrode in the AC PDP)

  • 유수복
    • 전기학회논문지
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    • 제58권3호
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    • pp.586-590
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    • 2009
  • Recently, an AC Plasma Display Panels(PDP) with the metal sustain electrodes have been reported in order to reduce the manufacturing cost of the AC PDP. However, the luminance and efficacy of the AC PDP with metal electrodes are worse than those of the AC PDP with ITO electrodes. In this paper, various ${\prod}$type metal electrodes are suggested, in order to improve the electro-optical characteristics of the AC PDP with metal electrodes. Among the suggested electrode types, luminance of Hump electrode structure is higher by $40\;cd/m^2$ and discharge current of Asymmetry electrode structure is lower by 5% than those of Pi electrode structure, respectively. Moreover, $T_1$ of Hump electrode structure is reduced to 10% as compared with Pi electrode structure in address period for ADS driving scheme. In all aspects, the characteristics of Hump and Asymmetry electrode structure show best performance.

포인트 터널링과 라인 터널링을 모두 고려한 실리콘 기반의 포켓 터널링 전계효과 트랜지스터의 최적 구조 조건 (Guide Lines for Optimal Structure of Silicon-based Pocket Tunnel Field Effect Transistor Considering Point and Line Tunneling)

  • 안태준;유윤섭
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2016년도 추계학술대회
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    • pp.167-169
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    • 2016
  • 이 논문은 라인 터널링과 포인트 터널링을 모두 고려한 포켓 터널링 전계효과 트랜지스터의 여러가지 구조 및 물질 파라미터에 따른 시뮬레이션 결과를 소개한다. 포켓의 도핑 농도와 두께가 증가할수록 구동전류 $I_{on}$이 증가하고 포켓의 두께와 게이트 절연체의 유전율이 증가할수록 SS(subthreshold swing)가 좋아짐을 보인다. hump 효과는 SS를 나쁘게 하기 때문에 최소화할 수 있도록 최적의 구조를 만들어야 한다.

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A STANDARD METHOD FOR JOINTING CAMEL CARCASSES WITH REFERENCE TO THE EFFECT OF SLAUGHTER AGE ON CARCASS CHARACTERISTICS IN NAJDI CAMELS. 3. PARTITION AND DISTRIBUTION OF CARCASS FAT

  • Abouheif, M.A.;Basmaeil, S.M.;Bakkar, M.N.
    • Asian-Australasian Journal of Animal Sciences
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    • 제4권3호
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    • pp.219-225
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    • 1991
  • The influence of age on the relative growth patterns of subcutaneous, intermuscular, intramuscular, perirenal, channel and hump fat in relation to the total fat weight in carcass sides of 18 Najdi male camels averaging 8, 16 and 26 months of age has been investigated. The total fat weight in a carcass side increased (p<.01) from 17.3% to 27.1% as the camel age increased from 8 to 26 months. However, at all ages studied, intermuscular fat weight was the largest fat depot, followed, in order, by subcutaneous and intramuscular fat. The change in weight of the intramuscular, intermuscular and subcutaneous fat between 8 and 26 months of age was greater, reaching 6.7, 4.3 and 4 times respectively, than the hump, channel and perirenal fat weight which increased by 3.6, 2.5 and 2.3 times, respectively. The allometric growth coefficient (${\beta}$) for intramuscular fat in relation to the total carcass fat weight was the highest, followed, in order, by intermuscular, subcutaneous, hump, channel and perirenal fat.