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http://dx.doi.org/10.4313/TEEM.2002.3.3.018

Anomalous Subthreshold Characteristics of Shallow Trench-Isolated Submicron NMOSFET with Capped p-TEOS/SiN  

Lee, Hyung J. (Department of Electronics Engineering, Andong National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.3, no.3, 2002 , pp. 18-20 More about this Journal
Abstract
In sub-l/4 ${\mu}{\textrm}{m}$ NMOSFET with STI (Shallow Trench Isolation), the anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel boron dopant redistribution due to the defect should be considered to improve hump characteristics besides considerations of STI comer and recess. 130
Keywords
MOSFET; STI; Hump; Subthreshold;
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