• Journal of Korean Society of Transportation
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• v.12 no.1
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• pp.137-149
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• 1994

The objective of study is to evaluate the effect of speed control hump on traffic operation and accidents. Three sites were investigated for the change of traffic accidents before and after the hump installation. Vehicle speeds approaching the hump were also analyzed. The study revealed that not only the number of traffic accidents but also the accident severity were significantly reduced by the installation of hump. Further, different types of traffic accidents with lower severity were observed after the hump installation. For the effect of speed reduction by hump, it was found that the speeds observed at 15m upstream of hump were in the range of 36~50 percent of approaching speeds which were not affected by (ie, without) the hump. Economic analysis of hump installation showed the benefit-cost ratio of 4.3 and 11.2 at two sites. Further analysis revealed that the benefit by the accident reduction exceeds the cost by speed reduction and installation capital if AADT is below 43,150 vehicles on two lane highways. It is recommended from the study that humps should be considered on two lane highways of high accident locations for excessive speeds to reduce traffic accidents and severity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.522-529
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• 2013

In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, $0.18{\mu}m$ 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.291-293
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• 2000

In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.18-20
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• 2002

In sub-l/4 ${\mu}{\textrm}{m}$ NMOSFET with STI (Shallow Trench Isolation), the anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel boron dopant redistribution due to the defect should be considered to improve hump characteristics besides considerations of STI comer and recess. 130

• Journal of Korean Society of Transportation
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• v.14 no.4
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• pp.77-90
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• 1996

Recently existing the road traffic low is requlated by hump standard, which is established throuth the actual england TRRL(Transpodt and Road Research Laboratory) experiment. The determined standard has been utilized, however, wihtout the test on of our street and its drivers driving characteristics. Even with the utilization, the appropriate before and after management, is not constituted. In Spite of minimum speed limit, in many case, the utilization itself is questionalble rather than the purpose of restraining speed limit or reducing vehicle confacts. Along with hump consideration, social attention is focused due to series of personal law suit(traffic accident) field against the negligence of local organization management. Therefore counter measure of safe transportation facility is urgently required. With consideration of above background, the purpose of this research is to develop the hump that is appropriate with our transportation environment. This can be achieved thr ugh analysis of hump effectiveness, examination of drivers awamess, facilitation/management problems, and various problems in verticle acceleration.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.36 no.6
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• pp.1075-1082
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• 2016

In order to calculate the optimum installation interval between a speed hump and hump type crosswalk that are installed continuously in succession, this study examined the speed of a vehicle that passes different intervals between speed humps and hump type crosswalks from the approach section of a roundabout having a maximum speed limit of 30km/h; analyzed the effects of speed humps and hump type crosswalks installed continuously in succession on vehicle driving speed; and simulated the optimum installation height of hump type crosswalk. As a result, the following conclusion was drawn. First, it was found that the optimum interval between a speed hump and hump type crosswalk, which are the representative traffic calming techniques for reducing vehicle speed, to control vehicle speed under 30km/h is 30m. Second, as a result of comparing the deceleration of a vehicle that pass hump type crosswalks, it was found that if the installation interval is 65 m and above, a speed hump and hump type crosswalk had no effect. Therefore, it is desirable that the maximum installation interval between a speed hump and hump type crosswalk for controlling vehicle speed within a fixed road section should not exceed 65m. Third, the analysis showed that the optimum installation height of hump type crosswalk is 6-8cm in case vehicle speed at the approach section is 20km/h or lower, 8-10cm in case of 30km/h, and 10cm in case of 30km/h or higher, respectively. Fourth, even at a road section on which a speed hump and hump type crosswalk are installed, speed reduction effects may sometimes be insignificant due to a driver's studying effect, traffic conditions and so on. Thus, it is judged that speed reduction effects will be greater if several traffic calming techniques such as speed hump, chicane, and choker are applied at the same time. Therefore, in case of applying traffic calming techniques for the purpose of reducing vehicle speed in order to promote pedestrian safety, the composite application of several techniques should be considered.

• Journal of computational fluids engineering
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• v.22 no.1
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• pp.8-14
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• 2017

In this paper, separated flow characteristics is studied using the RANS(Reynold-averaged Navier-Stokes) modeling. The analysis is performed for the NASA's hump configuration which is the combination of a flat plate and a hump. This configuration was used in NASA's flow control workshop and it was one of validation cases for RANS and LES simulations. The separation occurs at the 65% of model length where a slot is positioned for the flow control. No flow control case and steady suction case are studied using RANS modeling. The Spalart-Allmaras model and the SST(Shear Stress Transport) model are applied and their accuracy are compared. To correlate CFD analysis with experimental data, the optimal boundary condition was investigated and the effect of a cavity around the slot is studied for the no flow case.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.3
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• pp.586-590
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• 2009

Recently, an AC Plasma Display Panels(PDP) with the metal sustain electrodes have been reported in order to reduce the manufacturing cost of the AC PDP. However, the luminance and efficacy of the AC PDP with metal electrodes are worse than those of the AC PDP with ITO electrodes. In this paper, various ${\prod}$type metal electrodes are suggested, in order to improve the electro-optical characteristics of the AC PDP with metal electrodes. Among the suggested electrode types, luminance of Hump electrode structure is higher by $40\;cd/m^2$ and discharge current of Asymmetry electrode structure is lower by 5% than those of Pi electrode structure, respectively. Moreover, $T_1$ of Hump electrode structure is reduced to 10% as compared with Pi electrode structure in address period for ADS driving scheme. In all aspects, the characteristics of Hump and Asymmetry electrode structure show best performance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.167-169
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• 2016

The structure guide lines of pocket tunnel field effect transistor(TFET) considering Line and Point tunneling are introduced. As the pocket doping concentration or thickness increase, on-current $I_{on}$ increases. As the pocket thickness or gate insulator increase, subthreshold swing(SS) increases. Optimal structure reducing the hump effects should be proposed in order to enhance SS.

• Asian-Australasian Journal of Animal Sciences
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• v.4 no.3
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• pp.219-225
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• 1991

The influence of age on the relative growth patterns of subcutaneous, intermuscular, intramuscular, perirenal, channel and hump fat in relation to the total fat weight in carcass sides of 18 Najdi male camels averaging 8, 16 and 26 months of age has been investigated. The total fat weight in a carcass side increased (p<.01) from 17.3% to 27.1% as the camel age increased from 8 to 26 months. However, at all ages studied, intermuscular fat weight was the largest fat depot, followed, in order, by subcutaneous and intramuscular fat. The change in weight of the intramuscular, intermuscular and subcutaneous fat between 8 and 26 months of age was greater, reaching 6.7, 4.3 and 4 times respectively, than the hump, channel and perirenal fat weight which increased by 3.6, 2.5 and 2.3 times, respectively. The allometric growth coefficient (${\beta}$) for intramuscular fat in relation to the total carcass fat weight was the highest, followed, in order, by intermuscular, subcutaneous, hump, channel and perirenal fat.