• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

• Journal of Electrochemical Science and Technology
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• v.13 no.1
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• pp.100-111
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• 2022

This paper presents a simple and inexpensive method to fabricate chemically and mechanically resistant hot electron-emitting composite electrodes on reusable substrates. In this study, the hot electron emitting composite electrodes were manufactured by doping a polymer, nylon 6,6, with few different brands of carbon particles (graphite, carbon black) and by coating metal substrates with the aforementioned composite ink layers with different carbon-polymer mass fractions. The optimal mass fractions in these composite layers allowed to fabricate composite electrodes that can inject hot electrons into aqueous electrolyte solutions and clearly generate hot electron- induced electrochemiluminescence (HECL). An aromatic terbium (III) chelate was used as a probe that is known not to be excited on the basis of traditional electrochemistry but to be efficiently electrically excited in the presence of hydrated electrons and during injection of hot electrons into aqueous solution. Thus, the presence of hot, pre-hydrated or hydrated electrons at the close vicinity of the composite electrode surface were monitored by HECL. The study shows that the extreme pH conditions could not damage the present composite electrodes. These low-cost, simplified and robust composite electrodes thus demonstrate that they can be used in HECL bioaffinity assays and other applications of hot electron electrochemistry.

• The Korean Journal of Nuclear Medicine
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• v.35 no.4
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• pp.288-290
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• 2001

A 61 year-old woman underwent perfusion and inhalation lung scan for the evaluation of pulmonary thromboembolism. Tc-99m MAA perfusion lung scan showed multiple round hot spots in both lung fields. Tc-99m DTPA aerosol inhalation lung scan and chest radiography taken at the same time showed normal findings (Fig. 1, 2). A repeated perfusion lung scan taken 24 hours later demonstrated no abnormalities (Fig. 3). Hot spots on perfusion lung scan can be caused by microsphere clumping due to faulty injection technique or by radioactive embolization from upper extremity thrombophlebitis after injection. Focal hot spots can signify zones of atelectasis, where the hot spots probably represent a failure of hypoxic vasoconstriction. Artifactual hot spots due to microsphere clumping usually appear to be round and in peripheral location, and the lesions due to a loss of hypoxic vasoconstriction usually appear to be hot uptakes having linear $borders^{1-3)}$. Although these artifactual hot spots have been well-known, we rarely encounter them. This report presents a case with artifactual hot spots due to microsphere clumping on Tc-99m MAA perfusion lung scan.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.1-5
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• 2010

In this paper, we directly compare the program efficiency of conventional channel hot electron (CHE) injection methods and a novel hot electron injection methods using substrate forward biases in our silicon-oxide-nitride-oxide-silicon (SONOS) cell. Compared with conventional CHE injection methods, the proposed injection method showed improved program efficiency including faster program operation at lower bias voltages as well as localized trapping features for multi-bit operation with a threshold voltage difference of 1 V at between the forward and reverse read. This program method is expected to be useful and widely applied for future nano-scale multi-bit SONOS memories.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.780-790
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• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.2
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• pp.60-65
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• 2012

This paper deals with an CAE analysis and optimization of injection molding for a mobile phone cover. Two design goals are established in the optimization; one is to switch over the feed system from cold runner to hot runner for the purpose of reducing material costs, and the other is to minimize the warpage in order to improve product quality. By the full-factorial experiments for design parameters, we showed that the cold runner design could be changed to the hot runner design by replacing the current resin with a new resin of higher fluidity. In addition, we could significantly reduce the warpage of the cover product under the hot runner system by optimizing packing pressure and packing time.

• Nuclear Engineering and Technology
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• v.26 no.2
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• pp.257-264
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• 1994

Experimental studies hate been peformed to investigate vapor explosion phenomena which may threaten the containment integrity during severe accidents in nuclear power plants. In this study, experimental equipment is constructed for vapor explosion experiments, and the vapor explosion experiments were conducted using water/R22. During the experiments, water/R22 interaction phenomena were observed using the high speed camera, and the explosion pressure and released mechanical energy were measured with pressure transducer and pressure relief tube. And the effects of some important parameters-hot liquid temperature, hot liquid injection velocity, hot liquid injection velocity, hot liquid injection time, and cold liquid depth-were investigated on the vapor explosion. Also, the experiment with grid was conducted to study reactor -vessel-lower-structure effect on fuel/coolant interaction. Water/R22 explosion conversion ratios were measured between 0.5∼1.6%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.4
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• pp.215-222
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• 2023

3Y-TZP (3 mol% yttria-stabilized tetragonal zirconia polycrystals, 3Y-TZP) ceramics are emerging as dental implant materials due to their superior optical and mechanical properties as well as excellent biophysical properties, in spite of low bioactivity. In this study, we investigated to sintered properties and microstructural defects of dental zirconia implants fabricated by ceramic injection molding and post-HIP (Hot isostatic pressing) processing and analyzed the processing parameters related with the obtainment of its high sinterd density. Sintered and microstructural parameters, i.e, apparent density, grain size and phase composition of zirconia implants fabricated by injection molding were dependent on the fixtute size and implant type. Maximum sintered density of 99.2% and minimum grain size of 0.3-0.4 ㎛ were obtained from large-scaled 2-body sample. In 1-body ceramic implant, high sintered density of 99.5% was obtained, but it had a little monoclinic phase and wide grain size distribution.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.381-388
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• 2003

The paper presents our study of development for multi-cavity preform mold system which consists of hot runner system and valve gate. For this purpose, stretching blow molding process and preform injection process were simulated by Polyflow and Moldflow. Based on various results of the preform injection process analysis, process planning was established. The sectional thickness distribution of preform was optimized. Preform injection mold system was designed by these technical analysis data. Finally, 24-cavity preform mold system was successfully developed.