• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.129-135
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• 1996

In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15$\mu$m PMOSFET increases with increasing of impact ionization rate, and the impact ionization rate is a function of the gate length and gate bias voltage. Correlation between gate current and substrate current is investigated within the general framework of the lucky-electron. It is found that the impact ionization rate increases, but the device degradation is not serious with decreasing effective channel length. SCIHE is suggested as the possible phusical mechanism for enhanced impact ionization rate and gate current reduction. Considering the hot carrier induced device degradation, it has been found that the maximum supply voltage is about -2.6V for 0.15$\mu$m PMOSFET.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.510-514
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• 2013

The structural change of Nafion polymer electrolyte membrane (PEM) induced by hot-pressing, which is one of the representative procedures for preparing membrane-electrode-assembly for low temperature fuel cells, was investigated by $^2H$ nuclear magnetic resonance (NMR) spectroscopy. The hydrophilic channels were asymmetrically flattened and more aligned in the membrane plane than along the hot-pressing direction. The average O-$^2H$ director of $^2H_2O$ in polymer electrolyte membrane was employed to extract the structural information from the $^2H$ NMR peak splitting data. The dependence of $^2H$ NMR data on water contents was systematically analyzed for the first time. The approach presented here can be used to understand the chemicals' behavior in nano-spaces, especially those reshaping and functioning interactively with the chemicals in the wet and/or mixed state.

• Nuclear Engineering and Technology
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• v.41 no.5
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• pp.677-690
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• 2009

A previous study demonstrated that the two-row fuel assembly has much more favorable neutron-physical and thermal-hydraulic behavior than the conventional one-row fuel assemblies. Based on the newly developed two-row fuel assembly, an SCWR core is proposed and analyzed. The performance of the proposed core is investigated with 3-D coupled neutron-physical and thermal-hydraulic calculations. During the coupling procedure, the thermal-hydraulic behavior is analyzed using a sub-channel analysis code and the neutron-physical performance is computed with a 3-D diffusion code. This paper presents the main results achieved thus far related to the distribution of some neutronic and thermal-hydraulic parameters. It shows that with adjustment of the coolant and moderator mass flow in different assemblies, promising neutron-physical and thermal-hydraulic behavior of the SCWR core is achieved. A sensitivity study of the heat transfer correlation is also performed. Since the pin power in fuel assemblies can be non-uniform, a sub-channel analysis is necessary in order to investigate the detailed distribution of thermal-hydraulic parameters in the hottest fuel assembly. The sub-channel analysis is performed based on the bundle averaged parameters obtained with the core analysis. With the sub-channel analysis approach, more precise evaluation of the hot channel factor and maximum cladding surface temperature can be achieved. The difference in the results obtained with both the sub-channel analysis and the fuel assembly homogenized method confirms the importance of the sub-channel analysis.

• Journal of KIISE:Information Networking
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• v.29 no.2
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• pp.165-173
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• 2002

In the static channel assignment scheme for cellular mobile computing environment, each cell has a fixed number of channels and supports a service for a user′s request entering to the cell. This scheme has an advantage of simplicity. However, this scheme has a disadvantage that can′t control far hot cell problem. Therefore, to solve this problem, the "channel borrowing" concept is needed. In this paper, we propose a load balancing(channel borrowing, channel reassignment) approach using genetic algorithm. The purposes of using genetic algorithm in this paper are ${\circled1}$ to find early a cell including an available channel and ${\circled2}$ to decrease a number of probings and ${\circled3}$ to migrate to the cell after searching an available channel near upon optimality. To represent effectiveness of the proposed algorithm, we simulated various experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.3 s.345
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• pp.1-8
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• 2006

In this paper, reliability (HCI, NBTI) and device performance of nano-scale CMOSFETs with different channel stress were investigated. It was shown that NMOS and PMOS performances were improved by tensile and compressive stress, respectively, as well known. It is shown that improved device performance is attributed to the increased mobility of electrons or holes in the channel region. However, reliability characteristics showed different dependence on the channel stress. Both of NMOS and PMOS showed improved hot carrier lifetime for compressive channel stress. NBTI of PMOS also showed improvement for compressive stress. It is shown that $N_{it}$ generation at the interface of $Si/SiO_2$ has a great effect on the reliability. It is also shown that generation of positive fixed charge has an effect in the NBTI. Therefore, reliability as well as device performance should be considered in developing strained-silicon MOSFET.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1147-1152
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• 2009

The objectives of this paper are to study the characteristics of heat transfer and pressure drop of the zigzag channel PCHE using diffusion bonding technology by numerical analysis. PCHE of five types are designed, which are zigzag channel angle $180^{\circ}$, $160^{\circ}$, $140^{\circ}$, $120^{\circ}$ and $100^{\circ}$. The zigzag PCHE was numerically investigated for Reynolds number in a range of $150{\sim}800$. The temperatures of the hot side were performed at $80^{\circ}C$ while that of the cold side was conducted at $20^{\circ}C$. The results show that the performance of heat transfer rate for zigzag channel $100^{\circ}$ increases about 11.5% compared to that of zigzag channel $180^{\circ}$. On the other hand, the performance of pressure drop for zigzag channel $100^{\circ}$ is remarkably higher than that of zigzag channel $180^{\circ}$, about 1.4 times.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.21 no.9
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• pp.475-482
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• 2009

The objectives of this paper are to study the characteristics of heat transfer and pressure drop of the zigzag channel PCHE using diffusion bonding technology by numerical analysis. PCHE of five types are designed, which are zigzag channel angle 180$^{\circ}$, 160$^{\circ}$, 140$^{\circ}$, 120$^{\circ}$ and 100$^{\circ}$. The zigzag PCHE was numerically investigated for Reynolds number in a range of 150$\sim$800. The temperatures of the hot side were performed at 80$^{\circ}$ while that of the cold side was conducted at 20$^{\circ}C$. The results show that the performance of heat transfer rate for zigzag channel 100$^{\circ}$ increases about 11.5% compared to that of zigzag channel 180$^{\circ}$. On the other hand, the performance of pressure drop for zigzag channel 100$^{\circ}$ is remarkably higher than that of zigzag channel 180$^{\circ}$, about 2.4 times.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1101-1104
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• 2003

In this paper, we analyzed the gate current and substrate current by the hot carrier effects and restoration phenomenon of characteristics by time in the p-channel MOSFETs. The Stress voltage condition is a voltage in maximum gate current and time is 3s, 10s, 30s, l00s, 1000s, 2000s and 3000s. As results of analysis, the gate current and substrate current were decreased by stress time, and the restoration time of characteristics were shown the results that were decreased by the exponential times.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.879-882
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• 1999

The effects of the substrate bias on the performance of programming erasing in p-channel flash memory cell have been investigated. It is found that applying positive substrate bias can improve the programming and erasing speed. This improvements can be explained by Substrate Current Induced Hot Electron Injection. From the results, we can confirm that BTB programming method is better in programming and erasing speed than CHE programming method.