Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 4
- /
- Pages.129-135
- /
- 1996
- /
- 1016-135X(pISSN)
Hot carrier effects and device degradation in deep submicrometer PMOSFET
Deep submicrometer PMOSFET의 hot carrier 현상과 소자 노쇠화
Abstract
In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15
Keywords