• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권11호
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• pp.496-500
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to significantly impact terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (RIE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi-Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7% efficiency of mono-crystalline silicon solar cell and 10.2% multi-crystalline silicon solar cell.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• 대한기계학회논문집A
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• 제26권10호
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• pp.2044-2051
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• 2002

In this paper, the deformed shape, the contact forces and the load-displacement curves of the real hollow gasket made of silicon rubber are analyzed using a commercial finite element program MARC. In the numerical analysis, the silicon rubber is assumed to have the properties of the geometric and material nonlinearity and the incompressibility, and the hyperelastic constitutive relations of that material are represented by the generalized Mooney-Rivlin and Ogden models. The outer frictional contact between the hollow gasket and the groove of rigid container and the inner self-contact of the hollow gasket are taken into account in the course of numerical computation. Experiments are also performed to obtain the material data for numerical computation and to show the validity of the mechanical deformation of the hollow gasket, resulting in good agreements between them.

• Journal of Information Display
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• 제2권4호
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• 전기학회논문지
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• 제56권12호
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• pp.2221-2225
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• 2007

Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

• 한국정밀공학회지
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• 제20권11호
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• pp.150-157
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• 2003

In this paper, the large deformation of hollow silicon rubber gasket is treated. The frictional contact occurs between groove and the outer part of hollow gasket, and the frictional self-contact exists in the inner parts of hollow gasket. The silicon rubber has the nonlinear elastic behavior and its material property is approximately incompressible. Hence, the stress analysis requires an existence of a strain energy function, which is usually defined in terms of invariants or stretch ratio such as generalized Mooney-Rivlin and Ogden model. Considering large compressive deformation and friction, Mooney-Rivlin 3rd model and Coulomb's friction model are assumed. The numerical analysis is obtained by the commercial finite element program MARC. But, due to large deformation, the elements degenerate in the inner parts of hollow gasket. This means that the analysis of subsequent increments is carried out with a very poor mesh. In order to continue the analysis with a sufficient accuracy, it is necessary to use new finite element modeling by remesh. Experiments are also performed to show the validity of present method. As a conclusion, numerical results by this research have good agreements with experiments.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• 공업화학
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• 제27권4호
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• pp.444-448
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• 2016

이차전지 음극소재인 실리콘의 부피팽창을 개선하기 위하여 hollow silicon/carbon (H-Si/C) 복합체의 특성을 조사하였다. $St{\ddot{o}}ber$법을 통해 합성한 $SiO_2$에 $NaBH_4$를 첨가해 hollow 형태의 $SiO_2\;(H-SiO_2)$를 제조한 후, 마그네슘 열 환원 반응과 phenolic 수지(resin)를 첨가한 후 탄화과정을 거쳐서 H-Si/C 복합체를 합성하였다. 제조된 H-Si/C 합성물은 XRD, SEM, BET, EDX, TGA를 통해 특성을 분석하였다. 음극소재의 용량과 사이클 안정성을 향상시키기 위해서, $NaBH_4$ 첨가량에 따라 합성된 H-Si/C 복합체의 전기화학적 특성을 충방전, 사이클, 순환전압전류, 임피던스 테스트를 통해 조사하였다. H-Si/C 음극활물질과 $LiPF_6$ (EC : DMC : EMC = 1 : 1 : 1 vol%) 전해액을 사용하여 제조한 코인셀은 $SiO_2:NaBH_4=1:1$일 때 1459 mAh/g의 향상된 용량을 나타내었으며, 사이클 성능 또한 두 번째 사이클 이후 40번째 사이클까지 매우 우수한 안정성을 나타냄을 확인하였다.

• 마이크로전자및패키징학회지
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• 제28권4호
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• pp.79-83
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• 2021

본 연구에서는 기존의 silicon alkoxide(tetraethyl orthosilicate, TEOS)에 비해 단가가 저렴하여 상업화에 유리한 물유리를 전구체로 사용하여 계면활성제의 농도에 따라 형성되는 다양한 크기의 실리카 중공 미세구(hollow silica microsphere, HSM)를 합성하였다. 계면활성제의 농도에 따른 실리카 중공 미세구의 형성에 대한 물성을 퓨리에 분광기(Fourier transform infrared spectrometer), 접촉각 측정기(contact angle measurement), Brunauer-Emmett-Teller 및 Barrett-Joyner-Halenda 분석기와 전계방사형 주사전자현미경(field emission scanning electron microscopy)를 이용하여 분석하였다. 계면활성제를 적정량의 농도로 투입하여 porou s한 물유리 기반 실리카 중공 미세구를 제조할 경우 비표면적은 169 m²/g, 평균 입자 크기 25.3 ㎛ 및 표준편차는 6.25로 우수한 실리카 중공 미세구가 형성됨을 확인하였다.