• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.11
• /
• pp.496-500
• /
• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to significantly impact terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (RIE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi-Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7% efficiency of mono-crystalline silicon solar cell and 10.2% multi-crystalline silicon solar cell.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.5
• /
• pp.10-14
• /
• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.2
• /
• pp.62-66
• /
• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.10
• /
• pp.2044-2051
• /
• 2002

In this paper, the deformed shape, the contact forces and the load-displacement curves of the real hollow gasket made of silicon rubber are analyzed using a commercial finite element program MARC. In the numerical analysis, the silicon rubber is assumed to have the properties of the geometric and material nonlinearity and the incompressibility, and the hyperelastic constitutive relations of that material are represented by the generalized Mooney-Rivlin and Ogden models. The outer frictional contact between the hollow gasket and the groove of rigid container and the inner self-contact of the hollow gasket are taken into account in the course of numerical computation. Experiments are also performed to obtain the material data for numerical computation and to show the validity of the mechanical deformation of the hollow gasket, resulting in good agreements between them.

• Journal of Information Display
• /
• v.2 no.4
• /
• pp.1-7
• /
• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.12
• /
• pp.2221-2225
• /
• 2007

Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.11
• /
• pp.150-157
• /
• 2003

In this paper, the large deformation of hollow silicon rubber gasket is treated. The frictional contact occurs between groove and the outer part of hollow gasket, and the frictional self-contact exists in the inner parts of hollow gasket. The silicon rubber has the nonlinear elastic behavior and its material property is approximately incompressible. Hence, the stress analysis requires an existence of a strain energy function, which is usually defined in terms of invariants or stretch ratio such as generalized Mooney-Rivlin and Ogden model. Considering large compressive deformation and friction, Mooney-Rivlin 3rd model and Coulomb's friction model are assumed. The numerical analysis is obtained by the commercial finite element program MARC. But, due to large deformation, the elements degenerate in the inner parts of hollow gasket. This means that the analysis of subsequent increments is carried out with a very poor mesh. In order to continue the analysis with a sufficient accuracy, it is necessary to use new finite element modeling by remesh. Experiments are also performed to show the validity of present method. As a conclusion, numerical results by this research have good agreements with experiments.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1038-1041
• /
• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• Applied Chemistry for Engineering
• /
• v.27 no.4
• /
• pp.444-448
• /
• 2016

Hollow silicon/carbon (H-Si/C) composites as anode materials for lithium ion batteries were investigated to overcome the large volume expansion. H-Si/C composites were prepared as follows; hollow $SiO_2\;(H-SiO_2)$ was prepared by adding $NaBH_4$ to $SiO_2$ synthesized using $st{\ddot{o}}ber$ method followed by magnesiothermic reduction and carbonization of phenolic resin. The H-Si/C composites were analyzed by XRD, SEM, BET and EDX. To improve the capacity and cycle performance, the electrochemical characteristics of H-Si/C composites synthesized with various $NaBH_4$ contents were investigated by charge/discharge, cycle, cyclic voltammetry and impedance tests. The coin cell using H-Si/C composite ($SiO_2:NaBH_4=1:1$ in weight) in the electrolyte of $LiPF_6$ dissolved in organic solvents (EC : DMC : EMC = 1 : 1 : 1 vol%) has better capacity (1459 mAh/g) than those of other composition coin cells. It is found that the coin cell ($SiO_2:NaBH_4=1:1$ in weight) has an excellent capacity retention from 2nd cycle to 40th cycle.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.4
• /
• pp.79-83
• /
• 2021

In this study, hollow silica microspheres (HSM) of various sizes formed according to the concentration of surfactants using water glass as a precursor, which is advantageous for commercialization due to its lower unit cost compared to conventional silicon alkoxide (tetraethyl orthosilicate, TEOS) was synthesized. The physical properties of the silica hollow microspheres according to the concentration of surfactant were analyzed using Fourier transform infrared, contact angle measurement, Brunauer-Emmett-Teller and Barrett-Joyner-Halenda analyzers and field emission scanning electron microscopy. When porous water glass-based hollow silica spheres were prepared by adding a surfactant at an appropriate concentration, it was confirmed that excellent hollow silica spheres were formed with a specific surface area of 169 m²/g, an average particle size of 25.3 ㎛, and a standard deviation of 6.25.