• The Transactions of the Korean Institute of Power Electronics
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• v.2 no.1
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• pp.33-38
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• 1997

Generally, various semiconductor switching devices for power systems are used in battery chargers for electric vehicle. When these used, it takes the problems of transient-current or distortion of waveforms in power systems near by battery chargers because of harmonics and large peak-current, low power factor, etc., caused by the non-linearity of these devices. Recently, power factor control, line current peak-cut, harmonics reduction which was ignored in past is more and more important. In this paper, to solve those problems we will improve the characteristics of voltage rising and propose the high power factor converter circuit for battery chargers. Our proposed system convert commutated voltage to AC resonant wave in high frequency inverter and rectify the link voltages passed high-frequency transformer and transfer the DC voltages. Especially, the effect using these converter system can be improved very large by power factor control and we have to verify the possibilities of improvement through the experiment of Pb-Acid battery application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.911-915
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• 2004

In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• 전기의세계
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• v.26 no.3
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• pp.69-72
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• 1977

The effects of sharpness of needle electode on the spark voltage in needle-plane and needle-needle spark gaps at atmospheric pressure was investigated experimentaly in this paper. As the sharpness of needle electrode increases, the spark voltage increases, and the rate of increase is greater in needle-needle electrode than in needle-plane gap. the effects of sharpness is greater in small gap length. These characteristics can be explained by the electric field strength at the needle tip depending on the sharpness of needle, electro-static capacity between the electrodes, and the polarity effect in needle-plane gap. These experimental results will be able to play an important roles on the design of needle-needle gap as high voltage measurement devices and of needle-plane gap as high voltage rectifier equipments.

• Proceedings of the KIEE Conference
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• summer
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• pp.1205-1207
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• 2004

AC plasma power supply is used to control a ozone generator and a air pollution gas. AC plasma power supply is composed of power semiconductor switch devices and control board adapted SHE(Selected Harmonic Elimination) PWM method. AC plasma power supply with sinusoidal VVVF(variable voltage and variable frequency) is realized. Its output voltage range is from 0 [V] to 20[kV] and output frequency range is from 8[kHz] to 20[kHz]. Using proposed system, AC high voltage and high frequency discharge is tested in the DBD(dieletric barrier discharge) reactor, and the space distribution of a its non-thermal plasma is observed. In spite of the increasement of voltage and frequency, the proposed system have a stable operation characteristics. It is verified by the experimental results.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1227-1234
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• 2015

The efficient electric power demand management in electric power supply industry is currently being changed by distributed generation. Meanwhile, small-scale distributed generation systems using renewable energy are being constructed worldwide. Several small-scale renewable distributed generation systems, which can supply electricity to the grid at peak load of the grid as per policy such as demand response programs, could help in the stability of the electric power demand management. In this case, the power quality of the small-scale renewable distributed generation system is more significant. Low prices of power semiconductors and multilevel inverters with high power quality have been recently investigated. However, the conventional multilevel inverter topology is unsuitable for the small-scale renewable distributed generation system, because the number of devices of such topology increases with increasing output voltage level. In this paper, a single-phase multilevel inverter based on H-bridge, with DC_Link divided by bi-directional switches, is proposed. The proposed topology has almost half the number of devices of the conventional multilevel inverter topology when these inverters have the same output voltage level. Double Fourier series solution is mainly used when comparing PWM output harmonic components of various inverter topologies. Harmonic components of the proposed multilevel inverter, which have been analyzed by double Fourier series, are compared with those of the conventional multilevel inverter. An inverter prototype is then developed to verify the validity of the theoretical analysis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.10-14
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• 2009

We propose a trapezoidal gate AlGaN/GaN high electron mobility transistor(HEMT) to improve the breakdown voltage characteristics and its feasibility is investigated by two-dimensional device simulations. The use of a trapezoidal gate structure appears to be quite effective in dispersing the electric fields concentrated near the gate edge on the drain side from the simulation result. We find that a peak value of the electric field along the 2-DEG channel is reduced by 30%, from 4.8 to 3.5 MV/cm and thereby, the breakdown voltage(Vbr) of the proposed AlGaN/GaN HEMT is increased by about 40%, from 49 to 69 V, compared to those of the standard AlGaN/GaN HEMT.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.36-45
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• 2023

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.2
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• pp.59-66
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• 2012

Recently, the market of Electric Vehicle(EV) is increasing more and more than before. Thus a new heater for the EV is required. The PTC devices may be used the heater for the EV. In this paper, a simple DC-DC Converter is proposed as the PTC Heater for the EV. The proposed circuit was optimally desired to decrease the stress of the power devices and reduce the current ripples. To apply the result of the test in the laboratory to the actual EV system with the high DC voltage, ripple current, average current and output peak current are predicted by using the least-squares method. Finally, the proposed circuit is validated by various experiments.

• Journal of Power Electronics
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• v.18 no.1
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.