• 제목/요약/키워드: High-transmittance film

검색결과 396건 처리시간 0.026초

금속 패터닝과 Blank노광을 이용한 감광성 유리의 미세가공 (Microfabrication of Photosensitive Glass Using Metal Patterning and Blank Exposure)

  • 조재승;강형범;윤혜진;김효진;임현우;조시형;임실묵
    • 한국표면공학회지
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    • 제46권3호
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    • pp.99-104
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    • 2013
  • The simple and cost-effective microfabrication method of photosensitive glass (PSG) using metal patterning and blank exposure was proposed. Conventional photolithography for micromachining of PSG needs a costly quartz mask which has high transmittance as an optical property. However, in this study the process was improved through the combination of micro-patterned Ti thin film and blank UV exposure without quartz mask. The effect of UV exposure time as well as the DHF etching condition was investigated. UV exposure test was performed within the range from 3 min to 9 min. The color and etch result of PSG exposed for 5 min were the most clear and effective to etch more precisely, respectively. The etching results of PSG in diluted hydrofluoric acid (DHF) with a concentration of 5, 10, 15 vol% were compared. The effect on the side etch was insignificant while the etch rate was proportional as the concentration increased. 10 vol% DHF results not only high etch rate of 75 ${\mu}m/min$ also lower side etch value after PSG etching. This method facilitates the microfabrication of PSG with various patterns and high aspect ratio for applying to advanced applications.

Structural, Electrical and Optical Properties of $HfO_2$ Films for Gate Dielectric Material of TTFTs

  • 이원용;김지홍;노지형;문병무;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.331-331
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    • 2009
  • Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

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전기방사법과 이원화 열처리 공정을 통한 은 나노섬유의 합성 및 투명전극으로의 응용 (Synthesis of Silver Nanofibers Via an Electrospinning Process and Two-Step Sequential Thermal Treatment and Their Application to Transparent Conductive Electrodes)

  • 이영인;좌용호
    • 한국재료학회지
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    • 제22권10호
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    • pp.562-568
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    • 2012
  • Metal nanowires can be coated on various substrates to create transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these metal nanowire based transparent conductive films is that the resistance between the nanowires is still high because of their low aspect ratio. Here, we demonstrate high-performance transparent conductive films with silver nanofiber networks synthesized by a low-cost and scalable electrospinning process followed by two-step sequential thermal treatments. First, the PVP/$AgNO_3$ precursor nanofibers, which have an average diameter of 208 nm and are several thousands of micrometers in length, were synthesized by the electrospinning process. The thermal behavior and the phase and morphology evolution in the thermal treatment processes were systematically investigated to determine the thermal treatment atmosphere and temperature. PVP/$AgNO_3$ nanofibers were transformed stepwise into PVP/Ag and Ag nanofibers by two-step sequential thermal treatments (i.e., $150^{\circ}C$ in $H_2$ for 0.5 h and $300^{\circ}C$ in Ar for 3 h); however, the fibrous shape was perfectly maintained. The silver nanofibers have ultrahigh aspect ratios of up to 10000 and a small average diameter of 142 nm; they also have fused crossing points with ultra-low junction resistances, which result in high transmittance at low sheet resistance.

Taguchi method-optimized roll nanoimprinted polarizer integration in high-brightness display

  • Lee, Dae-Young;Nam, Jung-Gun;Han, Kang-Soo;Yeo, Yun-Jong;Lee, Useung;Cho, Sang-Hwan;Ok, Jong G.
    • Advances in nano research
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    • 제13권2호
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    • pp.199-206
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    • 2022
  • We present the high-brightness large-area 10.1" in-cell polarizer display panel integrated with a wire grid polarizer (WGP) and metal reflector, from the initial design to final system development in a commercially feasible level. We have modeled and developed the WGP architecture integrated with the metal reflector in a single in-cell layer, to achieve excellent polarization efficiency as well as brightness enhancement through the light recycling effect. After the optimization of key experimental parameters via Taguchi method, the roll nanoimprint lithography employing a flexible large-area tiled mold has been utilized to create the 90 nm-pitch polymer resist pattern with the 54.1 nm linewidth and 5.1 nm residual layer thickness. The 90 nm-pitch Al gratings with the 51.4 nm linewidth and 2150 Å height have been successfully fabricated after subsequent etch process, providing the in-cell WGPs with high optical performance in the entire visible light regime. Finally we have integrated the WGP in a commercial 10.1" display device and demonstrated its actual operation, exhibiting 1.24 times enhancement of brightness compared to a conventional film polarizer-based one, with the contrast ratio of 1,004:1. Polarization efficiency and transmittance of the developed WGPs in an in-cell polarizer panel achieve 99.995 % and 42.3 %, respectively.

레이저 기반 플라즈모닉 어닐링을 통한 은 나노입자 자가 생성 및 소결 공정과 이를 활용한 메탈메쉬 전극 기반 투명 웨어러블 히터 (Ag Nanoparticle Self-Generation and Agglomeration via Laser-Induced Plasmonic Annealing for Metal Mesh-Based Transparent Wearable Heater)

  • 황윤식;남의연;김연욱;우유미;허재찬;박정환
    • 한국전기전자재료학회논문지
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    • 제35권5호
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    • pp.439-444
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    • 2022
  • Laser-induced plasmonic sintering of metal nanoparticles (NPs) is a promising technology to fabricate flexible conducting electrodes, since it provides instantaneous, simple, and scalable manufacturing strategies without requiring costly facilities and complex processes. However, the metal NPs are quite expensive because complicated synthesis procedures are needed to achieve long-term reliability with regard to chemical deterioration and NP aggregation. Herein, we report laser-induced Ag NP self-generation and sequential sintering process based on low-cost Ag organometallic material for demonstrating high-quality microelectrodes. Upon the irradiation of laser with 532 nm wavelength, pre-baked Ag organometallic film coated on a transparent polyimide substrate was transformed into a high-performance Ag conductor (resistivity of 2.2 × 10-4 Ω·cm). To verify the practical usefulness of the technology, we successfully demonstrated a wearable transparent heater by using Ag-mesh transparent electrodes, which exhibited a high transmittance of 80% and low sheet resistance of 7 Ω/square.

OHP 필름위에 증착된 AZO 반도체 박막의 광학 및 전기적인 특성 분석 (Optical and electrical properties of AZO thin films deposited on OHP films)

  • 김경보;이종필;김무진
    • 융합정보논문지
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    • 제10권9호
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    • pp.28-34
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    • 2020
  • 본 논문에서는 투과도가 높은 OHP 필름상에 AZO 반도체 물질을 기반으로 한 광센서를 제작하여 광소자 특성 및 이를 구성하고 있는 반도체 소재의 물성에 대해 설명한다. 최근 전자소자 분야에서 주요 이슈가 되고 있는 플렉서블 광소자를 구현하기 위해서 최초로 투명하고 굽힘성이 있는 OHP 필름을 기판으로 사용하였다. 또한, 투명 전극 및 반도체 물질로 양산에 사용되고 있는 ITO는 인듐의 희소성 때문에 가격이 높다. 따라서 이 물질을 대체할 수 있는 소재를 발굴해야 하며, AZO 소재가 가능성이 있는지 Au/Al/AZO/OHP 필름 구조의 광센서 소자를 구현하여 광학 및 전기적인 특성을 평가하였다. 소자 및 이를 구성하는 소재들은 벤딩(굽힘)에 의한 물성 변화가 없었으며, 이와 같은 결과들은 차세대 소자로의 적용에 대한 가능성을 제공한다. 하지만, 양산을 위해서는 OHP 필름 표면의 미세한 스크래치를 제거해야 하며, 뿐만 아니라 광전류를 향상시킬 수 있는 재료, 구조 기반으로 최적화된 소자를 연구해야 할 것이다.

졸-겔법으로 성장시킨 Mg0.3Zn0.7O 박막의 Mg 전구체의 종류에 따른 광학적·구조적 특성에 관한 연구 (The Effect of Mg Precursors on Optical and Structural Characteristics of Sol-Gel Processed Mg0.3Zn0.7O Thin Films)

  • 염아람;김홍승;장낙원;윤영;안형수
    • 한국전기전자재료학회논문지
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    • 제33권3호
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    • pp.214-218
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    • 2020
  • In this study, MgxZn1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg0.3Zn0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg2+/Zn2+. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg0.3Zn0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

제조공법에 따른 디스플레이 소자용 silver-grid 투명전극층의 특성 비교 (Comparison of characteristics of silver-grid transparent conductive electrodes for display devices according to fabrication method)

  • 최병수;최석환;류정호;조현
    • 한국결정성장학회지
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    • 제27권2호
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    • pp.75-79
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    • 2017
  • 고밀도 플라즈마 식각 및 lift-off 두 가지 공정으로 honeycomb 형상의 Ag-grid 투명전극층을 제작하였고 제조 공법에 따른 광학적 및 전기적 특성을 비교하였다. 플라즈마 식각 조건 선정을 위하여 Ag 박막의 $10CF_4/5Ar$ 유도결합 플라즈마 식각특성을 조사하였다. 비교적 낮은 ICP source power 또는 rf chuck power 영역에서는 power 증가에 따라 Ag 식각속도가 증가하였고, 높은 power 조건에서는 $Ar^+$ 이온 에너지 감소 또는 $Ar^+$ 이온에 의한 F radical 제거로 인해 식각속도가 감소하였다. $10CF_4/5Ar$ 플라즈마 식각 공정에 의해 제작된 Ag-grid 전극층은 lift-off 공정으로 제작된 전극층에 비해 grid 패턴 형상의 왜곡이나 단절이 없는 더 우수한 grid 패턴 전사 효율과 가시광선 영역에서 더 높은 83.3 %(pixel 크기 $30{\mu}m$/선폭 $5{\mu}m$)와 71 %(pixel 크기 $26{\mu}m$/선폭 $8{\mu}m$)의 광투과율을 각각 나타내었다. 반면에 lift-off 공정으로 제작된 Ag-grid 전극층은 플라즈마 식각 공정 시편보다 더 우수한 $2.163{\Omega}/{\square}$(pixel 크기 $26{\mu}m$/선폭 $8{\mu}m$)과 $4.932{\Omega}/{\square}$(pixel 크기 $30{\mu}m$/선폭 $5{\mu}m$)의 면저항 특성을 나타내었다.

용액성장법에 의한 황화아연 박막층 분석 및 이의 CIGS 태양전지로의 응용 (Characterization of Chemical Bath Deposited ZnS Thin Films and Its application to $Cu(InGa)Se_2$ Solar Cells)

  • 신동협;;윤재호;안병태
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.138-138
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    • 2009
  • Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

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Brush-painted Ti-doped In2O3 Transparent Conducting Electrodes Using Nano-particle Solution for Printable Organic Solar Cells

  • 정진아;김한기
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.458.2-458.2
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    • 2014
  • We have demonstrated that simple brush-painted Ti-doped $In_2O_3$(TIO) films can be used as a cost effective transparent anodes for organic solar cells (OSCs). We examined the RTA effects on the electrical, optical, and structural properties of the brush painted TIO electrodes. By the direct brushing of TIO nanoparticle ink and rapid thermal annealing (RTA), we can simply obtain TIO electrodes with a low sheet resistance of 28.25 Ohm/square and a high optical transmittance of 85.48% under atmospheric ambient conditions. Furthermore, improvements in the connectivity of the TIO nano-particles in the top region during the RTA process play an important role in reducing the resistivity of the brush-painted TIO anode. In particular, the brush painted TIO films showed a much higher mobility ($33.4cm^2/V-s$) than that of previously reported solution-process transparent oxide films ($1{\sim}5cm^2/V-s$) due to the effects of the Ti dopant with higher Lewis acid strength (3.06) and the reduced contact resistance of TIO nanoparticles. The OSCs fabricated on the brush-painted TIO films exhibited cell-performance with an open circuit voltage (Voc) of 0.61 V, shot circuit current (Jsc) of $7.90mA/cm^2$, fill factor (FF) of 61%, and power conversion efficiency (PCE) of 2.94%. This indicates that brush-painted TIO film is a promising cost-effective transparent electrode for printing-based OSCs with its simple process and high performance.

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