• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.47-49
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• 2000

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.78-80
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• 2000

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.47-52
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• 2018

In this study, the effects of the heat treatment and multi-scale hierarchical structures on the durability of the nano-patterned functional PMMA(Poly(methyl-methacrylate)) film was evaluated. The heat treatments that consisted of high-pressure/high-temperature flat pressing and rapid cooling process were employed to improve mechanical property of the PMMA films. Multi-scale hierarchical structures were fabricated by thermal nanoimprint to protect nano-scale structures from the scratch. Examination on surface structures and functionalities such as wetting angle and transmittance revealed that the preopposed heat treatment and multi-scale hierarchical structures are effective to minimize surface damages.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.101-104
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• 2022

Mist-CVD is known to have advantages of low cost and high productivity compared to ALD and PECVD methods. It is capable of reacting to the substrate by misting an aqueous solution using ultrasonic waves under vacuum-free conditions of atmospheric pressure. In particular, Ga₂O₃ is regarded as advanced power semiconductor material because of its high quality of transmittance, and excellent electrical conductivity through N-type doping. In this study, Computational Fluid Dynamics were used to predict the uniformity of the thin film on a large-area substrate. And also the deposition pattern and uniformity were analyzed using the flow velocity and particle tracking method. The uniformity was confirmed by quantifying the deposition cross section with an FIB-SEM, and the consistency of the uniformity prediction was secured through the analysis of the CFD distribution. With the analysis and experimental results, the match rate of deposition area was 80.14% and the match rate of deposition thickness was 55.32%. As the experimental and analysis results were consistent, it was confirmed that it is possible to predict the deposition thickness uniformity of Mist-CVD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.296-302
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• 2006

ILow-temperature $TiO_2$ sol was synthesized with various catalyst contents by using a sol-gel method. $TiO_2$ thin films were produced by a dip-coating method and their optical, structural and photocatalytic properties were examined. Transmittance of $TiO_2$ thin films with 0.10 mol, 0.25 mol, 0.50 mol and 0.75 mol catalyst content showed high transmittance in the visible range. XRD results showed the anatase-to-rutile phase transition was accelerated with increasing catalyst content and the crystallinity size of the $TiO_2$ thin films increased with increasing catalyst content. SEM results indicated that the particle size of the $TiO_2$ thin films was the smallest with catalyst content of 0.25 mol. Photocatalytic results showed that methylene blue was completely decomposed in the presence of anatase film prepared with 0.10 mol, 0.25 mol and 0.50 mol catalyst content.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.43-48
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• 2017

Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.

• Land and Housing Review
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• v.10 no.3
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• pp.23-32
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• 2019

Vacuum Insulation Panel(VIP) has the lowest thermal conductivity among present insulations. It is composed of envelope, core material and getter. Aluminum film is usually used as the envelope of VIP, and it is important component to decide the useful life of VIP. In this research, the thermophysical properties of incombustible fiber glass core VIP were investigated with the possibility of its architectural applications. The results of this research can be summarized as follows: 1) The thermal conductivity of 20mm-thick fiber glass core VIP is resulted as 0.00177W/m·K, which means that 20mm-thick VIP can meet all the reinforced insulation guideline and it can be used in any envelope of any region in Korea. 2) As a result of the test of incombustion and gas toxicity, fiber glass core VIP was suitable for incombustible material. 3) As the test result for the long term thermal conductivity, fiber glass core VIP was found out that it would keep above 10 times insulating performance than polystyrene foam and glass fiber. 4) To meet the thermal transmittance of 0.12W/㎡K, limited-combustible insulation of expanded polystyrene foam and phenolic foam should be used respectively as thick as above 280mm and 170mm, incombustible VIP can meet the same insulation level with 20mm thickness. 5) The price competitiveness of incombustible VIP to meet the thermal transmittance of 0.12W/㎡·K was about 1,500won/㎡ higher than that of phenolic foam.