Journal of Korean Vacuum Science & Technology
- Volume 4 Issue 2
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- Pages.47-49
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- 2000
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- 1226-6167(pISSN)
Highly transparent Pt ohmic contact to InGaN/GaN blue light-emitting diodes
- Chul Huh (Department of Materials Science and Engineering and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology) ;
- Kim, Hyun-Soo (Department of Materials Science and Engineering and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology) ;
- Kim, Sang-Woo (Department of Materials Science and Engineering and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology) ;
- Lee, Ji-Myon (Department of Materials Science and Engineering and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology) ;
- Kim, Dong-Joon (Department of Materials Science and Engineering and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology) ;
- Kim, Hyun-Min (Department of Materials Science and Engineering and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology) ;
- Park, Seon-Ju (Department of Materials Science and Engineering and Center for Optolectronic Materials Research, Kwangju Institute of Science and Technology)
- Published : 2000.06.01
Abstract
We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.
Keywords