• Title/Summary/Keyword: High-temperature XRD

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Preparation of cube-textured pure Ni sheets for substrates of high-$T_c$ superconducting coated conductors (고온초전도 도체의 기판을 위한 cube-texture된 니켈의 제조)

  • Kim, Su-Young;Kim, Sung-Gon;Jeong, Dae-Young;Lee, Won-Jae;Cho, Kyung-Mox
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.34-37
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    • 2003
  • 본 연구는 고온초전도 coated coductors의 기판으로 cube texture된 순수 Ni 기판을 개발하기 위하여 전체 가공율과 압연율에 따른 (100) texture의 변화와 1차적으로 열처리한 기판을 다시 압연한 후 재열처리 하였을 때의 전체 가공율과 압연율에 따른 (100) texture의 변화를 GADS XRD와 SEM을 이용하여 연구하고자 하였다. 그 결과, 압연 후에는 압연율에 관계없이 비교적 약한 강도의 (220)과 (200), (111), (311) peak가 나타났는데, 4%로 압연했을 경우 (220) peak가 가장 강한 peak로 나타난 반면, 10%로 압연한 경우에는 (200) peak가 비교적 강하게 나타났다. 그러나 이를 $900^{\circ}C$에서 열처리한 후에는 (200) peak 만 뚜렷이 발달되어 나타났는데, 전체 가공율과 압연율이 높을수록 (200) peak의 강도가 높게 나타나 압연을 통하여 발달한 결정립자의 (110) 면을 따른 배열이 열처리 과정을 통하여 회전하여 (100)면을 따른 배열로 바뀌는 것으로 추측할 수 있었다. 그러나 $900^{\circ}C$에서 열처리한 두께 0.2mm 판재를 다시 0.1mm까지 4%와 10%의 압연율로 압연하고 500~$900^{\circ}C$에서 1시간동안 최종 열처리한 후에는 상대적으로 낮은 2차 가공율에 의하여 집합조직의 전체 가공율과 압연율에의 의존성이 사라지는 것으로 나타났다.

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Fabrication of Thin Film Transistors based on Sol-Gel Derived Oxide Semiconductor Layers by Ink-Jet Printing Technology

  • Mun, Ju-Ho;Kim, Dong-Jo;Song, Geun-Gyu;Jeong, Yeong-Min;Gu, Chang-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.16.1-16.1
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    • 2009
  • We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

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Thermal Conducting Behavior of Composites of Conjugated Short Fibrous-SiC Web with Different Filler Fraction (짧은 섬유상간의 접합을 가진 Silicon Carbide Web 복합재료의 분율별 열전도 거동)

  • Kim, Tae-Eon;Bae, Jin Chul;Cho, Kwang Yeon;Lee, Dong Jin;Shul, Yong-Gun
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.549-555
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    • 2012
  • Silicon carbide(SiC) exhibits many unique properties, such as high strength, corrosion resistance, and high temperature stability. In this study, a SiC-fiber web was prepared from polycarbosilane(PCS) solution by employing the electrospinning process. Then, the SiC-fiber web was pyrolyzed at $1800^{\circ}C$ in argon atmosphere after it was subjected to a thermal curing. The SiC-fiber web (ground web)/phenolic resin (resol) composite was fabricated by hot pressing after mixing the SiC-fiber web and the phenolic resin. The SiC-fiber web composition was controlled by changing the fraction of filler (filler/binder = 9:1, 8:2, 7:3, 6:4, 5:5). Thermal conductivity measurement indicates that at the filler content of 60%, the thermal conductivity was highest, at 6.6 W/mK, due to the resulting structure formed by the filler and binder being closed-packed. Finally, the microstructure of the composites of SiC-fiber web/resin was investigated by FE-SEM, EDS, and XRD.

Preparation of AlN Powder Using Mesoporous Alumina and Its Characterization (메조포러스 알루미나를 이용한 AlN 분말 제조 및 특성분석)

  • Kim, Eun Bee;Lee, Yoon Joo;Shin, Dong Geun;Kwon, Woo Teck;Kim, Soo Ryong;Kang, Mi Sook;Kim, Young Hee
    • Journal of the Korean Ceramic Society
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    • v.51 no.6
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    • pp.544-548
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    • 2014
  • Aluminum nitride was synthesized using a carbothermal method from mesoporous alumina having a high surface area (> $1,000m^2/g$) as an aluminum source and CNTs (carbon nano tubes) as a carbon source. In this case the mesoporous alumina was used as the starting material instead of ${\alpha}-Al_2O_3$ with the expectation that the mesopores in mesoporous alumina act as channels for N2 gas and elimination of CO generated as by-product. It is also expected that the synthetic temperature should be lower compared to the use of ${\alpha}-Al_2O_3$ as a starting material due to its high surface area. The crystallinity of the produced aluminum nitride was studied by XRD and FT-IR, and the microstructure was investigated by FE-SEM. Also the purity of the aluminum nitride was analyzed through N/O determinator and ICP analysis.

Optimization of the deposition condition on hetero-epitaxial As-doped ZnO thin films by pulsed laser deposition (PLD를 이용한 hetero-epitaxial As-doped ZnO 박막 증착 조건의 최적화)

  • Lee, Hong-Chan;Jung, Youn-Sik;Choi, Won-Kook;Park, Hun;Shim, Kwang-Bo;Oh, Young-Jei
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.207-210
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    • 2005
  • In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

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Synthesis and Rapid Consolidation of W-1.5 ZrO2 Composite (W-1.5 ZrO2 복합재료 합성과 급속소결)

  • Kim, Seong-Eun;Shon, In-Jin
    • Korean Journal of Materials Research
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    • v.28 no.11
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    • pp.653-658
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    • 2018
  • $ZrO_2$ is a candidate material for hip and knee joint replacements because of its excellent combination of biocompatibility, corrosion resistance and low density. However, the drawback of pure $ZrO_2$ is a low fracture toughness at room temperature. One of the most obvious tactics to cope with this problem is to fabricate a nanostructured composite material. Nanomaterials can be produced with improved mechanical properties(hardness and fracture toughness). The high-frequency induction heated sintering method takes advantage of simultaneously applying induced current and mechanical pressure during sintering. As a result, nanostructured materials can be achieved within very short time. In this study, W and $ZrO_2$ nanopowders are mechanochemically synthesized from $WO_3$ and Zr powders according to the reaction($WO_3+3/2Zr{\rightarrow}W+3/2ZrO_2$). The milled powders are then sintered using high-frequency induction heating within two minutes under the uniaxial pressure of 80MPa. The average fracture toughness and hardness of the nanostructured W-3/2 $ZrO_2$ composite sintered at $1300^{\circ}C$ are $540kg/mm^2$ and $5MPa{\cdot}m^{1/2}$, respectively. The fracture toughness of the composite is higher than that of monolithic $ZrO_2$. The phase and microstructure of the composite is also investigated by XRD and FE-SEM.

Electrical Properties of TiN/TiO2/FTO Resistive Random-Access Memory Based on Peroxo Titanium Complex Sol Solution by Heat Treatment (열처리에 따른 Peroxo Titanium Complex 졸 용액 기반 TiN/TiO2/FTO Resistive Random-Access Memory의 전기적 특성)

  • Yim, Hyeonmin;Lee, Jinho;Kim, Won Jin;Oh, Seung-Hwan;Seo, Dong Hyeok;Lee, Donghee;Kim, Ryun Na;Kim, Woo-Byoung
    • Korean Journal of Materials Research
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    • v.32 no.9
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    • pp.384-390
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    • 2022
  • A spin coating process for RRAM, which is a TiN/TiO2/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (VO), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti3+ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 104. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO2/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

Industrial application of WC-TiAlN nanocomposite films synthesized by cathodic arc ion plating system on PCB drill

  • Lee, Ho. Y.;Kyung. H. Nam;Joo. S. Yoon;Jeon. G. Han;Young. H. Jun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.06a
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    • pp.3-3
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    • 2001
  • Recently TiN, TiAlN, CrN hardcoatings have adapted many industrial application such as die, mold and cutting tools because of good wear resistant and thermal stability. However, in terms of high speed process, general hard coatings have been limited by oxidation and thermal hardness drop. Especially in the case of PCB drill, high speed cutting and without lubricant process condition have not adapted these coatings until now. Therefore more recently, superhard nanocomposite coating which have superhard and good thermal stability have developed. In previous works, WC-TiAlN new nanocomposite film was investigated by cathodic arc ion plating system. Control of AI concentration, WC-TiAlN multi layer composite coating with controlled microstructure was carried out and provides additional enhancement of mechanical properties as well as oxidation resistance at elevated temperature. It is noted that microhardness ofWC-TiA1N multi layer composite coating increased up to 50 Gpa and got thermal stability about $900^{\circ}C$. In this study WC-TiAlN nanocomposite coating was deposited on PCB drill for enhancement of life time. The parameter was A1 concentration and plasma cleaning time for edge sharpness maintaining. The characteristic of WC-TiAlN film formation and wear behaviors are discussed with data from AlES, XRD, EDS and SEM analysis. Through field test, enhancement of life time for PCB drill was measured.

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Arsenic Contamination of Groundwater a Grave Concern: Novel Clay-based Materials for Decontamination of Arsenic (V)

  • Amrita Dwivedi;Diwakar Tiwari;Seung Mok Lee
    • Applied Chemistry for Engineering
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    • v.34 no.2
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    • pp.199-205
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    • 2023
  • Arsenic is a highly toxic element, and its contamination is widespread around the world. The natural materials with high selectivity and efficiency toward pollutants are important in wastewater treatment technology. In this study, the mesoporous synthetic hectorite was synthesized by facile hydrothermal crystallization of gels comprising silica, magnesium hydroxide, and lithium fluoride. Additionally, the naturally available clay was modified using zirconium at room temperature. Both synthetic and modified natural clays were employed in the removal of arsenate from aquatic environments. The materials were fully characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), and Fourier transform-infrared (FT-IR) analyses. The synthesized materials were used to remove arsenic (V) under varied physicochemical conditions. Both materials, i.e., Zr-bentonite and Zr-hectorite, showed high percentage removal of arsenic (V) at lower pH, and the efficiency decreased in an alkaline medium. The equilibrium-state sorption data agrees well with the Langmuir and Freundlich adsorption isotherms, and the maximum sorption capacity is found to be 4.608 and 2.207 mg/g for Zr-bentonite and Zr-hectorite, respectively. The kinetic data fits well with the pseudo-second order kinetic model. Furthermore, the effect of the background electrolytes study indicated that arsenic (V) is specifically sorbed at the surface of these two nanocomposites. This study demonstrated that zirconium intercalated synthetic hectorite as well as zirconium modified natural clays are effective and efficient materials for the selective removal of arsenic (V) from aqueous medium.

Synthesis and application of zirconium phosphate mesoporous coordination polymer for effective removal of Co(II) from aqueous solutions

  • Yang Zeng;Guoyuan Yuan;Tu Lan;Feize Li;Jijun Yang;Jiali Liao;Yuanyou Yang;Ning Liu
    • Nuclear Engineering and Technology
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    • v.54 no.11
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    • pp.4013-4021
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    • 2022
  • A kind of zirconium phosphate mesoporous coordination polymer Zr-EDTMPA was successfully synthesized and characterized using XRD, FTIR, TGA, EA, SEM-EDS, and N2 sorption-desorption measurements. The prepared Zr-EDTMPA was first employed for the removal of Co(II) from an aqueous solution, and the effects of pH, contact time, temperature, initial Co(II) concentration, reusability, and sorption mechanism were systematically investigated. The results showed that the Zr-EDTMPA is a zirconium phosphate complex formed by the coordination of EDTMPA to Zr in a molar ratio of 1:1. The sorption of Co(II) by Zr-EDTMPA was a pH-dependent, spontaneous and endothermic process, which was better fitted to the pseudo-second-order kinetic model and Langmuir isotherm model. The Zr-EDTMPA was demonstrated to have excellent reusability and presented a high sorption capacity of 73.0 mg·g-1 for Co(II) at pH 8.0. The sorption mechanism was mainly attributed to the strong coordination between cobalt and the untapped hydroxyl functional groups on Zr-EDTMPA, which was confirmed by XPS spectra. Therefore, as a candidate sorbent with high sorption capacity and excellent reusability, Zr-EDTMPA has a great potential for the removal of Co(II) from aqueous solutions.