• 한국수소및신에너지학회논문집
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• 제25권1호
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• pp.19-27
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• 2014

Mg hydride has a high hydrogen capacity (7.6%), at high temperature, and is a lightweight and low cost material, thus it a promising hydrogen storage material. However, its high operation temperature and very slow reaction kinetics are obstacles to practical application. In order to overcome these disadvantages of Mg hydride, graphene powder was added to it. The addition of graphene has been shown to reduce the operating temperature of dehydrogenation. Moreover, in this report the environmental aspects of $MgH_x$-Graphene composites are investigated by means of the environmental life cycle assessment (LCA) method. $MgH_x$-Graphene mixture was prepared by hydrogen induced mechanical alloy (HIMA). The synthesized powder was characterized by XRD(X-ray Diffraction). The hydrogenation behaviors were evaluated by using a Sievert's type automatic PCT apparatus. Such evaluation of Materials also conducted in the LCA. From the result of P-C-T(Pressure-Composition-Temperature) curves, the $MgH_x$-3wt.% graphene composite was evaluated as having a 5.86wt.% maximum hydrogen storage capacity, at 523K. From absorption kinetic testing, the $MgH_x$-7wt.% graphene composite was evaluated as having a maximum 6.94wt.%/ms hydrogen absorption rate, at 573K. Environment evaluation results for the $MgH_x$-graphene composites and other materials indicated environmental impact from the electric power used and from the materials themselves.

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.226-231
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• 2014

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.

• 센서학회지
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• 제7권5호
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• pp.372-376
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• 1998

기능성 소자 응용을 위한 다양한 박막을 성장시키기 위하여 PLD(Pulsed Laser Deposition) 장치를 제작 개발하였다. 이 PLD 장치를 이용하여 $NbS_2$ 박막을 $Al_2O_3$(012) 기판과 Si(111) 기판 위에 성장시켰다. 결정성 박막의 성장조건을 조사하기 위하여 기판온도를 실온${\sim}600^{\circ}C$, 타겟의 성분비(S/Nb)를 $2.0{\sim}5.25$로 변화시켰다. XRD 패턴으로부터 기판온도가 $600^{\circ}C$이고 타겟의 성분비가 4.0일 때 c-축 배향을 나타내는 양호한 결정성의 $NbS_2$박막이 성장되었다. Si(111) 기판 위보다 $Al_2O_3$(012) 기판 위에서 보다 양질의 $NbS_2$ 박막이 성장되었음을 알 수 있었다.

• 한국결정성장학회지
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• 제17권3호
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• pp.95-101
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• 2007

수열합성 장치를 이용하여 종자 결정이 도포된 알루미나 지지체 위에 제올라이트 박막을 합성하였다. X-선 회절 분석과 전자현미경 사진을 이용하여 반응기 내에 생성된 제올라이트 A 분말과 제올라이트 A박막의 생성과 전이 생성물에 대해 합성온도, 합성시간, 종자결정의 영향에 대해서 고찰하였다. 제올라이트 A박막의 생성은 지지체 표면에 도포된 종자 결정에서 치밀한 연속적인 박막이 형성된 다음 용해과정을 거쳐 결정의 크기가 큰 다결정 층을 형성하고, 최종적으로 소다라이트를 거쳐 무정형으로 진행하였다. 반면에 분말에서는 반응초기부터 소다라이트가 관찰되는데 고정된 제올라이트 A 박막과 다르게 결정주위의 공간적인 차이에 의해 소다라이트가 생성하기에 용이한 공간을 갖기 때문에 소다라이트가 쉽게 생성되는 것으로 생각된다. 합성온도가 높으면 짧은 시간 내에 전이 생성물을 거쳐 무정형으로 진행하였고 온도가 낮으면 합성 시간이 길고 피복도가 다소 낮은 제올라이트 A 박막을 얻었다. $120^{\circ}C$, 12시간에서 피복도가 높은 치밀한 제올라이트 A박막을 합성하였다.

• 한국수소및신에너지학회논문집
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• 제31권5호
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• pp.419-428
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• 2020

The kinetics of direct methanation over activated charcoal-supported molybdenum catalyst at 30 bar was studied in a cylindrical fixed-bed reactor. When the temperature was not higher than 400℃, the CO conversion increased with increasing temperature according to the Arrhenius law of reaction kinetics. While XRD and Raman analysis showed that Mo was present as Mo oxides after reduction or methanation, TEM and XPS analysis showed that Mo₂C was formed after methanation depending on the loading of Mo precursor. When the temperature was as high as 500℃, the CO conversion was dependent not only on the Arrhenius law but also on the catalyzed reaction by nanoparticles, which came off from the reactor and thermocouple by metal dusting. These nanoparticles were made of Ni, Fe, Cr and alloy, and attributed to the formation of carbon deposit on the wall of the reactor and on the surface of the thermocouple. The carbon deposit consisted of amorphous and disordered carbon filaments.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.206-210
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• 2010

$BaTiO_3$ dielectric ceramics are widely used to multi-layer ceramic capacitor. The $BaTiO_3$ powder was synthesized at $950^{\circ}C$ by using a solid state reaction and grinded by using a high-energy mill. And then, 2.53 wt% glass frit was added to the synthesized $BaTiO_3$ powders for lowering the sintering temperature. The mixed powders were sintered at various temperatures of $1170^{\circ}C$, $1200^{\circ}C$, $1230^{\circ}C$. Microstructures of the sintered $BaTiO_3$ ceramics were inspected by SEM and crystal structures were analyzed by XRD method. The relative dielectric constant was measured by using a impedance/gain phase analyzer. The synthesized $BaTiO_3$ powder had the tetragonal perovskite structure without secondary phase and the particle size was below 200 nm. The relative densities measured at the samples sintered at the temperature above $1200^{\circ}C$ were about 95%. The relative dielectric constant showed maximum value of 2310, which was measured in the specimen sintered at $1200^{\circ}C$. From these results, we could know that the added glass frit had effects on both lowering the sintering temperature and improving the dielectric property.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.98-98
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• 1999

Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.

• 한국응용과학기술학회지
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• 제28권3호
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• pp.321-328
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• 2011

The autothermal reforming reaction of methane was investigated to produce hyd rogen with Ni/$CeO_2-ZrO_2$, Ni/$Al_2O_3$-MgO and Ni-Ru/$Al_2O_3$-MgO catalysts. Honeycomb metalli c monolith was applied in order to obtain high catalytic activity and stability in autothermal r eforming. The catalysts were characterized by XRD, BET and SEM. The influence of various catalysts on hydrogen production was studied for the feed ratio($O_2/CH_4$, $H_2O/CH_4$). The $O_2/CH_4$ and $H_2O/CH_4$ ratio governed the methane conversion and temperature profile of reactor. Th e reactor temperature increased as the reaction shifted from endothermic to exothermic reactio n with increasing $O_2/CH_4$ ratio. Among the catalysts used in the experiment, the Ni-Ru/$Al_2O_3$-MgO catalyst showed the highest activity. The 60% of $CH_4$ conversion was obtained, and th e reactor temperature was maintained $600^{\circ}C$ at the condition of GHSV=$10000h^{-1}$ and feed ratio S/C/O=0.5/1/0.5.

• 한국표면공학회지
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• 제38권5호
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• pp.188-192
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• 2005

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.