• 한국결정성장학회지
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• 제5권3호
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• pp.299-305
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• 1995

건식 spark 방법에 의하여 상온에서 광 발광하는 실리콘을 제작하였다. Anodically etching된 다공성 실리콘에 비하여 spark법에 의해 제조된 광 발광 peak는 520nm로 청색으로 전이되어 있었다. 또한 spark법으로 제조된 실리콘의 경우 UV 노출에 의한 광 발광력의 안정성이 매우 높게 나타났다. High resolution TEM, XRD 연구 결과를 통하여 spark법으로 제조한 실리콘은 작은 다결정성 nanocrystalline 입자가 주로 비정질 $SiO_2$에 의하여 에워 싸여져 있음을 확인할 수 있었다.

• 센서학회지
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• 제8권2호
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• pp.184-188
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• 1999

Pulsed laser deposition법에 의하여 양질의 PbTe 박막을 다양한 기판온도에 따라 성장시켰다. XRD패턴으로 부터 각 온도에서의 PbTe층들은 결정화가 되어있음을 알 수 있었다. 또한 PbTe 박막의 XRD 피크들은 (h00)의 방향성을 나타내고 있다. Pb의 재증발로 인하여 $400^{\circ}C$이상에서는 PbTe 박막은 결정성의 박막으로 형성되지 않았다. AFM 이미지로부터 박막의 표면은 작은 granular 결정들과 평탄한 매트릭스로 구성되어 있음이 관찰되었다. 기판온도의 증가에 따라 표면의 입자들이 커지는 것을 알 수 있었다. Hall-effect 측정으로부터 $300^{\circ}C$에서 성장한 PbTe 박막의 전기적 특성은 $3.68{\times}10^{18}cm^{-3}$의 캐리어 농도와 $148\;cm^2/Vs$의 Hall 이동도를 나타내었다.

• 에너지공학
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• 제2권3호
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• pp.300-307
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• 1993

고성능 니켈-철 축전지를 개발하기 위하여 철전극에 대한 충방전 반응 특성을 전위주사법, SEM, XRD분석으로 조사하였으며, 또한 전극용량을 정전류 충방전 시험법으로 조사하였다. 전해질 온도 및 농도가 전극용량에 크게 영향을 미쳤으며, 특히 온도가 상승함에 따라 1차 방전용량이 증가하였다. 증공제는 전극용량에 거의 영향을 미치지 못하였다. 전극용량은 방전율 0.25C에서 350㎃h/g (이용율 36%) 이상으로 나타났고, 전극의 안정성도 양호하게 나타났으나 활성화가 느리게 일어났다.

• Carbon letters
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• 제2권1호
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• pp.22-26
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• 2001

Na alloyed graphite intercalation compounds with stage 1 and 2 were synthesized using the high temperature and pressure technique. Thermal stability and staging transitions of the compounds were investigated depending on heating rates. The thermal stability and temperature dependence of the deintercalation compounds were characterized using differential scanning calorimeter (DSC) analyzer. Enthalpy of formations were confirmed at temperatures between 25 and $500^{\circ}C$, depending on the various heating rates. The structure ions and interlayer spaces of the graphite were identified by X-ray diffraction (XRD). Diffractograms of stages with non-integral (00l) values were obtained in the thermal decomposition process, and stacking disorder defects and random stage modes were observed. The average value of the interlayer C-C bond lengths were found approximately $2.12{\AA}$ and $1.23{\AA}$ from the diffractions. Based on the stage transition, the degree of the deintercalaton has a inverse-linear relationship against the heating rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 센서학회지
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• 제17권6호
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 전기학회논문지
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• 제56권10호
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• pp.1782-1785
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• 2007

In this paper, the effect of substrate temperature on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) films were investigated. AZO thin films were prepared on glass substrate by pulsed DC magnetron sputtering technique. The properties of AZO were measured by using XRD, AFM, UV spectrophotometer, and hall effect measurement system. The resistivity of AZO films was improved under the condition of high substrate temperature. The resistivity decreased from $9.95{\times}10^{-2}\;{\Omega}-cm\;to\;1.1{\times}10^{-3}\;{\Omega}-cm$ as a result of high substrate temperature and the average transmittances in visible range were above 80%.

• Carbon letters
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• 제21권
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• pp.33-50
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• 2017

In this study, Fe-Ni bimetallic catalyst supported on kaolin is prepared by a wet impregnation method. The effects of mass of kaolin support, pre-calcination time, pre-calcination temperature and stirring speed on catalyst yields are examined. Then, the optimal supported Fe-Ni catalyst is utilised to produce multi-walled carbon nanotubes (MWCNTs) using catalytic chemical vapour deposition (CCVD) method. The catalysts and MWCNTs prepared using the optimal conditions are characterized using high resolution transmission electron microscope (HRTEM), high-resolution scanning electron microscope (HRSEM), electron diffraction spectrometer (EDS), selected area electron diffraction (SAED), thermogravimetric analysis (TGA), Brunauer-Emmett-Teller (BET), and X-ray diffraction (XRD). The XRD/EDS patterns of the prepared catalyst confirm the formation of a purely crystalline ternary oxide ($NiFe_2O_4$). The statistical analysis of the variance demonstrates that the combined effects of the reaction temperature and acetylene flow rate predominantly influenced the MWCNT yield. The $N_2$ adsorption (BET) and TGA analyses reveal high surface areas and thermally stable MWCNTs. The HRTEM/HRSEM micrographs confirm the formation of tangled MWCNTs with a particle size of less than 62 nm. The XRD patterns of the MWCNTs reveal the formation of a typical graphitized carbon. This study establishes the production of MWCNTs from a bi-metallic catalyst supported on kaolin.

• 한국결정성장학회지
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• 제14권4호
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• pp.140-144
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• 2004

Hot-wall epitaxy법으로 GaAs 기판 위에 성장시킨 CdTe 박막은 (III) 면의 단결정 박막으로 성장되었음을 XRD 측정으로부터 확인하였으며, 박막 성장률은 SEM 측정 사진으로부터 30 $\AA/s$임을 알았다. PL 측정으로 얻은 최적성장조건은 원료물질 온도 $500^{\circ}C$, 기판 온도 $320^{\circ}C$이었다.

• Journal of Korean Vacuum Science & Technology
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• 제4권2호
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• pp.50-54
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• 2000

We studied the synthesis of S $i_{1-x}$ Cx (x=0.016) epitaxial layer using ion implantation and solid phase epitaxy (SPE). The activation energy Ea was obtained for the loss of substitutional carbon using fourier transform-infrared spectroscopy (FTIR) and high-resolution x-ray diffraction (HR-XRD). In FTIR analysis, the integrated peak intensity was used to quantify the loss of carbon atoms from substitutional to interstitial sites during annealing. The substitutional carbon contents in S $i_{0.984}$ $C_{0.016}$ were also measured using HR-XRD. By dynamic simulations of x-ray rocking curves, the fraction of substitutional carbon was obtained. The effects of annealing temperature and time were also studied by comparing vacuum furnace annealing with rapid thermal annealing (RTA))))))