Journal of Sensor Science and Technology (센서학회지)
- Volume 8 Issue 2
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- Pages.184-188
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- 1999
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Structure and Electrical Properties of PbTe Thin Film According To The Substrate Temperature
기판온도에 따른 PbTe 박막의 구조 및 전기적 물성
- Lee, Hea-Yeon (Department of Chemistry, Pukyong National University) ;
- Choi, Byung-Chun (Department of Physics, Pukyong National University) ;
- Jeong, Jung-Hyun (Department of Physics, Pukyong National University)
- Published : 1999.03.31
Abstract
PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with the substrate temperature up to
Pulsed laser deposition법에 의하여 양질의 PbTe 박막을 다양한 기판온도에 따라 성장시켰다. XRD패턴으로 부터 각 온도에서의 PbTe층들은 결정화가 되어있음을 알 수 있었다. 또한 PbTe 박막의 XRD 피크들은 (h00)의 방향성을 나타내고 있다. Pb의 재증발로 인하여
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