• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.173-179
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• 2023

This paper analyzes the time-dependent dielectric breakdown(TDDB) degradation mechanism for each stress region of Peri devices manufactured by 4th generation VNAND process, and presents a complementary lifetime prediction model that improves speed and accuracy in a wider reliability evaluation region compared to the conventional model presented. SiON dielectric nMOSFETs were measured 10 times each under 5 constant voltage stress(CVS) conditions. The analysis of stress-induced leakage current(SILC) confirmed the significance of the field-based degradation mechanism in the low electric field region and the current-based degradation mechanism in the high field region. Time-to-failure(TF) was extracted from Weibull distribution to ascertain the lifetime prediction limitations of the conventional E-model and 1/E-model, and a parallel complementary model including both electric field and current based degradation mechanisms was proposed by extracting and combining the thermal bond breakage rate constant(k) of each model. Finally, when predicting the lifetime of the measured TDDB data, the proposed complementary model predicts lifetime faster and more accurately, even in the wider electric field region, compared to the conventional E-model and 1/E-model.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.339-344
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• 2005

A PEMFC system model for FCEV was constructed and simulated numerically to examine the heat/water flow of the system and air/fuel humidification process for various operation conditions (ambient pressure /temperature/humidity, operating temperature, power load). We modeled PEMFC stack which can generate maximum electricity of about 80 kW. This stack consists of 400 unit cells and each unit cell has $250cm^2$ reacting area. Uniform current density and uniform operating voltage per each cell was assumed. The results show the flow characteristics of heat and water at each component of PEMFC system in macro-scale. The capacity shortage of the radiator occurred when the ambient was hot $(over\;40^{\circ}C)$ and power level was high (over 50 kW). In spite of some heat release by evaporation of water in stack, heat unbalance reached to 20kW approximately in such a severe operating condition. This heat unbalance could be recovered by auxiliary radiators or high speed cooling fan with additional cost. In cold environment, the capacity of radiator exceeded the net heat generation to be released, which may cause a problem to drop the operating temperature of stack. We dealt with this problem by regulating mass flow rate of coolant and radiator fan speed. Finally, water balance was not easily broken when we retrieved condensed and/or unused water.

• Journal of radiological science and technology
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• v.37 no.3
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• pp.223-231
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• 2014

Medical linear accelerator is widely used in radiation treatment field, and high energy photons, above 10 MV nominal accelerator voltage, are commonly utilized for the radiation treatment. However, these high energy photons lead the photo-nuclear reaction and the generation of photo-neutrons are accompanied. Thus, these problematic factors are issued in the view of radiation protection. Therefore, linear accelerator and radiation treatment room are simulated from MCNPX program in this study. The measurement points of interest are selected and analyzed, and the resulting effects derived from the properties of photo-neutron are evaluated. Therefore, we realized that the number of generating photo-neutrons was decreased by depending on the distance from the source. No matter what the nominal energy is set, the rates thermal neutrons to fast neutrons are marginal. It is founded that the amount of the thermal neutrons were decreased by depending on the distance from the source.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.48-55
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• 2009

This paper presents a high-speed Forward Error Correction (FEC) architecture based on three-parallel Reed-Solomon (RS) decoder for next-generation 100-Gb/s optical communication systems. A high-speed three-parallel RS(255,239) decoder has been designed and the derived structure can also be applied to implement the 100-Gb/s RS-FEC architecture. The proposed 100-Gb/s RS-FEC has been implemented with 0.13-${\mu}m$ CMOS standard cell technology in a supply voltage of 1.2V. The implementation results show that 16-Ch. RS-FEC architecture can operate at a clock frequency of 300MHz and has a throughput of 115-Gb/s for 0.13-${\mu}m$ CMOS technology. As a result, the proposed three-parallel RS-FEC architecture has a much higher data processing rate and low hardware complexity compared with the conventional two-parallel, three-parallel and serial RS-FEC architectures.

• The Journal of the Korea Contents Association
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• v.15 no.6
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• pp.283-289
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• 2015

Recently, high energy photon radiotherapy is a growing trend for increasing therapy results. Commonly, if you use high energy photons above 6~8 MeV nominal accelerator voltage, It lead the photo-nuclear reaction and the generation of photo-neutron are accompanied and these problematic factors are issued in the view of radiation protection. Therefore, in this study analyzed for dose distribution of photo-neutron in radiotherapy room based on MCNPX. As a result, absorbed dose is increased sharply from 10 MV to 12 MV. It was founded that the rapid increasement of photoneutron fluence was related to the absorbed dose at above 10 MV. Also, in case of the recommendation of ICRP 103, the outcome of an exchanged equivalent dose which based on calculated an absorbed dose, showed lower equivalent dose than ICRP 60 by reflecting the contribution of secondary photon for absorbed dose of human body in the low energy band.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• ETRI Journal
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• v.37 no.6
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• pp.1135-1142
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• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.5
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• pp.2545-2552
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• 2014

This study is aiming to suggest the effective thermal management system design technologies for the high voltage and capacity battery system of the electricity driven vehicles and introduce the theoretical designing methods. In order to investigate the effective operation of the battery system for the electricity driven vehicles, the heat generation model for Li-ion battery system using the chemical reaction while charging and discharging was suggested and the thermal loads of the heat sources (air or liquid) for cooling and heating were calculated using energy balance. Especially, the design methods for the cooling and heating of the battery system for maintaining the optimum operation temperature were investigated under heating, cooling and generated heat (during charging and discharging) conditions. The battery thermal management system for the effective battery operation of the electricity driven vehicles was suggested reasonably depending on the variation of the season and operation conditions. In addition, at the same conditions under summer season, the cooling method using the liquid and active cooling technique showed a relatively high capacity, while cooling method using the passive cooling technique showed a relatively low capacity.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.111-115
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• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.