• Title/Summary/Keyword: High voltage current

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High Temperature Characteristics of submicron GaAs MESFETs (고온 동작 MESFET 의 온도특성 해석)

  • 원창섭;유영한;신훈범;한득영;안형근
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.379-382
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    • 2002
  • GaAs has wide band gap, Therefore that malarial can used high Temperature application. in this paper explain to current-voltage characteristics of thermal effect. we experiment on thermal test of current-voltage characteristics and gate leakage current with real device. As a result, we propose a current-volatage characteristics model. that model base on gate leakage current, and gate leakage current influence gate source voltage.

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Electrical Characteristics and Thermal Reliability of Stacked-SCRs ESD Protection Device for High Voltage Applications

  • Koo, Yong Seo;Kim, Dong Su;Eo, Jin Woo
    • Journal of Power Electronics
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    • v.12 no.6
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    • pp.947-953
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    • 2012
  • The latch-up immunity of the high voltage power clamps used in high voltage ESD protection devices is very becoming important in high-voltage applications. In this paper, a stacking structure with a high holding voltage and a high failure current is proposed and successfully verified in 0.18um CMOS and 0.35um BCD technology to achieve the desired holding voltage and the acceptable failure current. The experimental results show that the holding voltage of the stacking structure can be larger than the operation voltage of high-voltage applications. Changes in the characteristics of the stacking structure under high temperature conditions (300K-500K) are also investigated.

A Study on the SPICE Model Parameter Extraction Method for the DC Model of the High Voltage MOSFET (High Voltage MOSFET의 DC 해석 용 SPICE 모델 파라미터 추출 방법에 관한 연구)

  • Lee, Un-Gu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2281-2285
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    • 2011
  • An algorithm for extracting SPICE MOS level 2 model parameters for the high voltage MOSFET DC model is proposed. The optimization method for analyzing the nonlinear data of the current-voltage curve using the Gauss-Newton algorithm is proposed and the pre-process step for calculating the threshold voltage and the mobility is proposed. The drain current obtained from the proposed method shows the maximum relative error of 5.6% compared with the drain current of 2-dimensional device simulation for the high voltage MOSFET.

Control Scheme Using Active Power Regulation for DC Voltage of VSC HVDC Under Unbalanced Voltage (불평형 전압 발생 시 유효전력 조절을 통한 전압형 HVDC의 DC전압 제어 방안)

  • Park, Sang-In;Huh, Jae-Sun;Moon, Won-Sik;Kim, Doo-Hee;Kim, Jae-Chul
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.2
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    • pp.232-239
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    • 2015
  • Faced with unbalanced grid operation mode, the high voltage direct current (HVDC) based on voltage source converter (VSC) can be properly controlled by a dual current control scheme. For the modular multilevel converter (MMC) controlling the AC side current is able to limit the arm current which flows along the IGBT of submodule (SM) to rated current. However the limitation of the arm current results in leaving the control range of active power at MMC confined to below the rated capacity. As a result, limiting the arm current causes the problem that the DC side voltage of the HVDC can not be controlled to the reference value since MMC HVDC adjusts the DC side voltage through the active power. In this paper, we propose the algorithm adjusting the active powers of both MMCs to resolve the problem. The back-to-back MMC HVDC applying the algorithm is modeled by PSCAD/EMTDC to verify the algorithm.

Partial Discharge Characteristics in LLDPE-Natural Rubber Blends: Correlating Electrical Quantities with Surface Degradation

  • Aulia, Aulia;Ahmad, Mohd Hafizi;Abdul-Malek, Zulkurnain;Arief, Yanuar Z.;Lau, KwanYiew;Novizon, Novizon
    • Journal of Electrical Engineering and Technology
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    • v.11 no.3
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    • pp.699-706
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    • 2016
  • Partial discharges (PD) lead to the degradation of high voltage cables and accessories. PD activities occur due to the existence of impurities, voids, contaminants, defects and protrusions during the manufacture and installation of power cables. Commonly, insulation failures occur at cable joints and terminations, caused by inhomogeneous electric field distributions. In this work, a blend of natural rubber (NR) and linear low density polyethylene (LLDPE) was investigated, and the optimal formulation of the blend that could resist PD was discussed. The experiments were conducted under a constant high voltage stress test of 6.5 kV AC and the magnitude of partial discharge activities was recorded using the CIGRE method II. Pattern analysis of PD signals was performed along with the interpretation of morphological changes. The results showed that the addition of 10 wt% of NR and 5 wt% of Alumina Trihydrate (ATH) provided promising results in resisting PD activities. However, as the NR content increased, more micropores existed, thus resulting in increased PD activities within the samples.

Experiment of harmonic components in voltage on high temperature superconducting wire carrying an AC

  • Lee, Jiho;Ko, Tae Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.1
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    • pp.51-54
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    • 2013
  • This paper deals with harmonic components of the voltage on high temperature superconducting wire carrying an alternating current. HTS wire is used to manufacture superconducting power applications carrying an alternating current. Typically, international standard, IEC 61788-3 is used for critical current measurement. Thus, it is not ideal that critical current criteria in dc are adapted to superconducting power devices to decide the operating current of the devices. In this paper, we confirmed odd harmonic voltage on HTS wires carrying an AC. The ratio between harmonic components and fundamental component can be significant clues to decide the critical current criteria for HTS wire and its power applications in AC circumstance.

Electroluminescent Characteristics of Fluorescent OLED with Alternating Current Negative Voltage (교류 음 전압에 따른 형광 OLED의 전계 발광 특성)

  • Seo, Jung-Hyun;Yang, Jae-Woong;Paek, Kyeong-Kap;Ju, Sung-Hoo
    • Journal of the Korean institute of surface engineering
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    • v.52 no.2
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    • pp.72-77
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    • 2019
  • To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

A Dual Gate AlGaN/GaN High Electron Mobility Transistor with High Breakdown Voltages (높은 항복 전압 특성을 가지는 이중 게이트 AlGaN/GaN 고 전자 이동도 트랜지스터)

  • Ha Min-Woo;Lee Seung-Chul;Her Jin-Cherl;Seo Kwang-Seok;Han Min-Koo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.1
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    • pp.18-22
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    • 2005
  • We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.

A Research on Stray-Current Corrosion Mechanism of High Voltage Cable Connector on Electrification Vehicles

  • Lee, Hwi Yong;Ahn, Seung Ho;Im, Hyun Taek
    • Corrosion Science and Technology
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    • v.18 no.4
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    • pp.117-120
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    • 2019
  • Considering the tendency of development of electrification vehicles, development and verification of new evaluation technology is needed because of new technology applications. Recently, as the battery package is set outdoors of an electric vehicle, such vehicles are exposed to corrosive environments. Among major components connected to the battery package, rust prevention of high-voltage cables and connectors is considered the most important issue. For example, if corrosion of high voltage cable connectors occurs, the corrosion durability assessment of using an electric vehicle will be different from general environmental corrosion phenomena. The purpose of this study is to investigate the corrosion mechanism of high voltage cable connectors of an electric vehicle under various driving environments (road surface vibration, corrosion environment, current conduction by stray current, etc.) and develop an optimal rust prevention solution. To improve our parts test method, we have proposed a realistic test method to reproduce actual electric vehicle corrosion issues based on the principle test.

A Novel Control Strategy for Input-Parallel-Output-Series Inverter System

  • Song, Chun-Wei;Zhao, Rong-Xiang;Lin, Wang-Qing;Zeng, Zheng
    • Journal of international Conference on Electrical Machines and Systems
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    • v.1 no.2
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    • pp.85-90
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    • 2012
  • This paper presents a topology structure and control method for an input-parallel-output-series(IPOS) inverter system which is suitable for high input current, high output voltage, and high power applications. In order to ensure the normal operation of the IPOS inverter system, the control method should achieve input current sharing(ICS) and output voltage sharing(OVS) among constituent modules. Through the analysis in this paper, ICS is automatically achieved as long as OVS is controlled. The IPOS inverter system is controlled by a three-loop control system which is composed of an outer common-output voltage loop, inner current loops and voltage sharing loops. Simulation results show that this control strategy can achieve low total harmonic distortion(THD) in the system output voltage, fast dynamic response, and good output voltage sharing performance.