• Applied Microscopy
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• v.34 no.1
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• pp.23-29
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• 2004

In this study, we introduce the structural analysis of amorphous silica nanoparticles by EF-TEM electron diffraction and in-situ heating experiments. Three diffused rings were observed on the electron diffraction patterns of initial silica nanoparticles, while crystalline spot patterns were gradually appeared during the insitu heating process at $900^{\circ}C$. These patterns indicate the basic unit of $SiO_4$ tetrahedra consisting amorphous silica and gradual crystallization into the ideal layer structure of tridymite by heating. Under high vacuum condition in TEM, SiO nanoparticles were redeposited on the carbon grid after evaporation of SiO gas from $SiO_2$ above $850^{\circ}C$ and the remaining $SiO_2$ were crystallized into orthorhombic tridymite, consistent with ex-situ heating results in furnace at $900^{\circ}C$.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.386-391
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• 2017

Using a customized diffusion bonder, we executed diffusion bonding for ring shaped white gold and red gold samples (inner, outer diameter, and thickness were 15.7, 18.7, and 3.0 mm, respectively) at a temperature of $780^{\circ}C$ and applied pressure of 2300 N in a vacuum of $5{\times}10^{-2}$ torr for 180 seconds. Optical microscopy, field emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS) were used to investigate the microstructure and compositional changes. The mechanical properties were confirmed by Vickers hardness and shear strength tests. Optical microscopy and FE-SEM confirmed the uniform bonding interface, which was without defects such as micro pores. EDS mapping analysis confirmed that each gold alloy was 14K with the intended composition; Ni and Cu was included as coloring metals in the white and red gold alloys, respectively. The effective diffusion coefficient was estimated based on EDS line scanning. Individual values of Ni and Cu were $5.0{\times}10^{-8}cm^2/s$ and $8.9{\times}10^{-8}cm^2/s$, respectively. These values were as large as those of the melting points due to the accelerated diffusion in this customized diffusion bonder. Vickers hardness results showed that the hardness values of white gold and red gold were 127.83 and 103.04, respectively, due to solid solution strengthening. In addition, the value at the interface indicated no formation of intermetallic compound around the bonding interface. From the shear strength test, the sample was found not to be destroyed at up to 100,000 gf due to the high bonding strength. Therefore, these results confirm the successful diffusion bonding of 14K white-red golds with a diffusion bonder at a low temperature of $780^{\circ}C$ and a short processing time of 180 seconds.

• Nuclear Engineering and Technology
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• v.45 no.5
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• pp.683-688
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• 2013

Candidate coating materials for re-usable metallic nuclear fuel crucibles, TaC, TiC, ZrC, $ZrO_2$, and $Y_2O_3$, were plasmasprayed onto a niobium substrate. The microstructure of the plasma-sprayed coatings and thermal cycling behavior were characterized, and U-Zr melt interaction studies were carried out. The TaC and $Y_2O_3$ coating layers had a uniform thickness, and high density with only a few small closed pores showing good consolidation, while the ZrC, TiC, and $ZrO_2$ coatings were not well consolidated with a considerable amount of porosity. Thermal cycling tests showed that the adhesion of the TiC, ZrC, and $ZrO_2$ coating layers with niobium was relatively weak compared to the TaC and $Y_2O_3$ coatings. The TaC and $Y_2O_3$ coatings had better cycling characteristics with no interconnected cracks. In the interaction studies, ZrC and $ZrO_2$ coated rods showed significant degradations after exposure to U-10 wt.% Zr melt at $1600^{\circ}C$ for 15 min., but TaC, TiC, and $Y_2O_3$ coatings showed good compatibility with U-Zr melt.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.37-42
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• 2006

The Dielectric Barrier Discharge (DBD) is a nonequilibrium gas discharge that is generated in the space between two electrodes, which are separated by an insulating dielectric layer. The dielectric layer can be put on either of the two electrodes or be inserted in the space between two electrodes. If an AC or pulse high voltage is applied to the electrodes that is operated at applied frequency from 50Hz to several MHz and applied voltages from a few to a few tens of kilovolts rms, the breakdown can occur in working gas, resulting in large numbers of micro-discharges across the gap, the gas discharge is the so called DBD. Compared with most other means for nonequilibrium discharges, the main advantage of the DBD is that active species for chemical reaction can be produced at low temperature and atmospheric pressure without the vacuum set up, it also presents many unique physical and chemical process including light, heat, sound and electricity. This has led to a number of important applications such as ozone synthesizing, UV lamp house, CO2 lasers, et al. In recent years, due to its potential applications in plasma chemistry, semiconductor etching, pollution control, nanometer material and large area flat plasma display panels, DBD has received intensive attention from many researchers and is becoming a hot topic in the field of non-thermal plasma.

• Nuclear Engineering and Technology
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• v.43 no.4
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• pp.391-398
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• 2011

The U metal chips generated in developing nuclear fuel and a gamma radioisotope shield have been stored under immersion of water in KAERI. When the water of the storing vessels vaporizes or drains due to unexpected leaking, the U metal chips are able to open to air. A new oxidation treatment process was raised for a long time safe storage with concepts of drying under vacuum, evaporating the containing water and organic material with elevating temperature, and oxidizing the uranium metal chips at an appropriate high temperature under conditions of controlling the feeding rate of oxygen gas. In order to optimize the oxidation process the uranium metal chips were completely dried at higher temperature than $300^{\circ}C$ and tested for oxidation at various temperatures, which are $300^{\circ}C$, $400^{\circ}C$, and $500^{\circ}C$. When the oxidation temperature was $400^{\circ}C$, the oxidized sample for 7 hours showed a temperature rise of $60^{\circ}C$ in the self-ignition test. But the oxidized sample for 14 hours revealed a slight temperature rise of $7^{\circ}C$ representing a stable behavior in the self-ignition test. When the temperature was $500^{\circ}C$, the shorter oxidation for 7 hours appeared to be enough because the self-ignition test represented no temperature rise. By using several chemical analyses such as carbon content determination, X-ray deflection (XRD), Infrared spectra (IR) and Thermal gravimetric analysis (TGA) on the oxidation treated samples, the results of self-ignition test of new oxidation treatment process for U metal chip were interpreted and supported.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.40-41
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• 2002

차세대 반도체 및 나노소자 산업에 대한 국제적 기술은 고밀도 직접화의 추세에 따라서 .게이트 산화막의 두께가 급속히 작아지는 추세이다. 지금까지 이산화규소(A1₂O₃)가 게이트 산화막으로 주로 사용되어 왔으나 점차 SiON 혹은 high k 박막으로 바뀌고 있다. 본 연구에서는 차세대 반도체 소자에 사용될 게이트 산화막 물질인 SiON 박막과 Al₂O₃박막에 대한 SE(Spectroscopic Ellipsometry)분석 모델을 확립하였고, SE 측정결과를 TEM, MEIS, XRR의 결과들과 비교하였다. SiON 박막의 굴절률 값은 Si₃N₄와 SiO₂가 물리적으로 혼합되어 있다고 가정하여 Bruggeman effective medium approximation을 사용하여 구하였다. 동일한 시료를 절단하여 TEM, MEIS, 그리고 XRR에 의하여 SiON 박막의 두께를 측정하였으며, 그 결과 SE와 XRR에 의해 얻어진 박막두께가 TEM과 MEIS의 결과 값보다 약 0.5 nm 크게 주어짐을 알 수 있었다(Table 1 참조). 본 연구결과는 비파괴적이며 비접촉식 측정방법인 SE가 2～4nm 두께의 초미세 SiON 박막의 두께와 N 농도의 상대적 값을 빠르고 쉽게 구할 수 있는 유용한 측정방법 임을 보여주었다. 기존의 게이트 산화물인 SiO₂를 대체할 후보 물질들 중의 하나인 A1₂O₃의 유전함수를 구하기 위하여 8 inch, p-type 실리콘 기판 위에 성장된 5 nm, 10 nm, 및 20 nm 두께의 A1₂O₃ 박막의 유전함수와 두께를 측정하였다. 이 시료들에 대한 SE data는 vacuum-UV spectroscopic ellipsometer를 사용하여 세 개의 입사각에서 0.75 eV에서 8.75 eV까지 0.05 eV 간격으로 측정되었다. A1₂O₃ 박막의 유전함수와 두께를 얻기 위하여 공기층/A1₂O₃ 박막/Si 기판으로 구성된 3상계 모델을 사용하였다. Si 기판에 대한 복소 유전함수는 문헌상의 값(1)을 사용하였고, A1₂O₃ 박막의 유전함수는 5개의 미지상수를 갖는 Tauc- Lorentz(TL) 분산함수(2)를 사용하였다. A1₂O₃ 박막의 경우 두께가 증가함에 따라서 굴절률이 커짐을 알 수 있었다.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Journal of the Korean Solar Energy Society
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• v.33 no.1
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• pp.73-78
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• 2013

Hexadecane and exfoliated graphite nanoplate (xGnP)composite was prepared as a shape-stabilized phase change material (SSPCM) in a vacuum to develope thermal energy storage. The Hexadecane as an organic phase change material (PCM) is very stable against phase separation of PCM and has a melting point at $18^{\circ}C$ that is under the thermally comfortable temperature range in buildings. The xGnP is a porous carbon nanotube material with high thermal conductivity. Scanning electron microscope (SEM) and Fourier transformation infrared spectrophotometer (FT-IR)were used to confirm the chemical and physical stability of Hexadecane/xGnP SSPCM. In addition, thermal properties were determined by Deferential scanning calorimeter(DSC) and Thermogravimetric analysis (TGA). The specific heat of Hexadecane/xGnPSSPCM was $10.0J/g{\cdot}K$ at $21.8^{\circ}C$. The melting temperature range of melting and freezing were found to be $16-25^{\circ}C$ and $17-12^{\circ}C$. At this time, the laten heats of melting and freezing were 96.4J/g and 94.8J/g. The Hexadecane was impregnated into xGnP as much about 48.8% of Hexadecane/xGnP SSPCM's mass fraction.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.11-14
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• 2007

For the fabrication of blue color organic light emitting diodes(OLED) with a high performance, 2-TNATA [4,4',4"-tris (2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB [N,N'-bis (1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by the vacuum thermal evaporation. After then, blue color emission layer was deposited using TPM-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl)phosphonate] and GDI602 as a light emitting organic material. Finally, the two kinds of OLEDs with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al and ITO/2-TNATA/NPB/GDI602/Alq_3/LiF/Al$ were prepared by in-situ deposition. The maximum current density and luminance were found to be about $588\;mA/cm^2\;and\;5239\;cd/m^2$ at 12V for the OLED sample with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al$. Color coordinate of blue OLED was x=0.18, y=0.18 (at llV) and the maximum current efficiency was 2.82 cd/A (at 6V) with the peak emission wavelength of 440 nm.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1104-1105
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• 2006

Several boride sintered bodies such as $TiB_2$, $ZrB_2$, and $SiB_6$ were previously reported. In the present study, the sinterability and physical properties of chromium boride $(CrB_2)$ containing chromium carbide $(Cr_3C_2)$ sintered bodies were investigated in order to determine its new advanced material. The samples were sintered at desired temperature for 1 hour in vacuum under a pressure by hot pressing. The relative density of sintered bodies was measured by Archimedes' method. The relative densities of $CrB_2$ addition of 0, 5, 10, 15 and 20 mass% $Cr_3C_2$ composites were 92 to 95%. The Vickers hardness of the $CrB_2$ with 10 and 15 mass% $Cr_3C_2$ composites were about 14 and 15 GPa at room temperature, respectively. The Vickers hardness at high temperature of the $CrB_2$ addition of 10 mass% $Cr_3C_2$ composite decreased with increasing measurement temperature. The Vickers hardness at 1273 K of the sample was 6 GPa. The Vickers hardness of $CrB_2$ addition of $Cr_3C_2$ composites was higher than monolithic $CrB_2$ sintered body. The powder X-ray diffraction analysis detected CrB and $B_4C$ phases in $CrB_2$ containing $Cr_3C_2$ composites.