• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.299-305
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• 1995

Visible photoluminescing (PL) silicon at room temperature has been prepared by a dry technique, that is, by spark processing, contrary to anodically etched porous silicon. PL peak maximum of photoluminescing spark processed Si was shifted to blue 520 nm. The stability of spark processed Si towards degradation upon UV radiation was found to be extremely high. Results from high resolution TEM, XRD and XPS studies suggest that spark processed silicon involves minute nanocrystalline (polycrystalline) particles which are imbedded in an amorphous matrix, preferably $SiO_2$.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.184-188
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• 1999

PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with the substrate temperature up to $300^{\circ}C$. PbTe films could not form at substrate temperature above $400^{\circ}C$ because of reevaporation of the Pb. According to AFM image, the surface of films was composed of small granular crystals and flat matrix. According to the increase of substrate temperature, the grain size at film surface becomes larger. By Hall-effect measurement, the carrier concentration and Hall mobility of n-type PbTe films grown by $T_{sub}=300^{\circ}C$ were $3.68{\times}10^{18}cm^{-3}$ and $148\;cm^2/Vs$, respectively.

• Journal of Energy Engineering
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• v.2 no.3
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• pp.300-307
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• 1993

To develop high performance nickel-iron secondary battery, the characteristics of charge-discharge reaction of iron electrode were examined by cyclic voltammetry technique, SEM and XRD analysis. The capacity of the test electrodes was determined by the constant current charge-discharge method. It was found that the temperature and concentration of electrolyte were the major determinant factors of electrode capacity, and especially the 1st discharge capacity was increased with the increase of temperature. The effect of fore forming agent on the electrode capacity was negligible. The electrode capacity was above 350 ㎃h/g(36% utility) at 0.25C discharge rate. The stability of electrode was very good, but the activation occurred slowly.

• Carbon letters
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• v.2 no.1
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• pp.22-26
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• 2001

Na alloyed graphite intercalation compounds with stage 1 and 2 were synthesized using the high temperature and pressure technique. Thermal stability and staging transitions of the compounds were investigated depending on heating rates. The thermal stability and temperature dependence of the deintercalation compounds were characterized using differential scanning calorimeter (DSC) analyzer. Enthalpy of formations were confirmed at temperatures between 25 and $500^{\circ}C$, depending on the various heating rates. The structure ions and interlayer spaces of the graphite were identified by X-ray diffraction (XRD). Diffractograms of stages with non-integral (00l) values were obtained in the thermal decomposition process, and stacking disorder defects and random stage modes were observed. The average value of the interlayer C-C bond lengths were found approximately $2.12{\AA}$ and $1.23{\AA}$ from the diffractions. Based on the stage transition, the degree of the deintercalaton has a inverse-linear relationship against the heating rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1782-1785
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• 2007

In this paper, the effect of substrate temperature on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) films were investigated. AZO thin films were prepared on glass substrate by pulsed DC magnetron sputtering technique. The properties of AZO were measured by using XRD, AFM, UV spectrophotometer, and hall effect measurement system. The resistivity of AZO films was improved under the condition of high substrate temperature. The resistivity decreased from $9.95{\times}10^{-2}\;{\Omega}-cm\;to\;1.1{\times}10^{-3}\;{\Omega}-cm$ as a result of high substrate temperature and the average transmittances in visible range were above 80%.

• Carbon letters
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• v.21
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• pp.33-50
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• 2017

In this study, Fe-Ni bimetallic catalyst supported on kaolin is prepared by a wet impregnation method. The effects of mass of kaolin support, pre-calcination time, pre-calcination temperature and stirring speed on catalyst yields are examined. Then, the optimal supported Fe-Ni catalyst is utilised to produce multi-walled carbon nanotubes (MWCNTs) using catalytic chemical vapour deposition (CCVD) method. The catalysts and MWCNTs prepared using the optimal conditions are characterized using high resolution transmission electron microscope (HRTEM), high-resolution scanning electron microscope (HRSEM), electron diffraction spectrometer (EDS), selected area electron diffraction (SAED), thermogravimetric analysis (TGA), Brunauer-Emmett-Teller (BET), and X-ray diffraction (XRD). The XRD/EDS patterns of the prepared catalyst confirm the formation of a purely crystalline ternary oxide ($NiFe_2O_4$). The statistical analysis of the variance demonstrates that the combined effects of the reaction temperature and acetylene flow rate predominantly influenced the MWCNT yield. The $N_2$ adsorption (BET) and TGA analyses reveal high surface areas and thermally stable MWCNTs. The HRTEM/HRSEM micrographs confirm the formation of tangled MWCNTs with a particle size of less than 62 nm. The XRD patterns of the MWCNTs reveal the formation of a typical graphitized carbon. This study establishes the production of MWCNTs from a bi-metallic catalyst supported on kaolin.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.140-144
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• 2004

CdTe thin films were grown on GaAs (100) substrates by hot wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100) film was grown as a single crystals with the different from growth plane of (III), and growth rate of CdTe thin films was found to be 30 $\AA/sec$ by SEM. To acquire a high quality CdTe thin film, the optimum temperature for the source and substrate are found to be $500^{\circ}C$ and $320^{\circ}C$, respectively, which was checked by PL.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.50-54
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• 2000

We studied the synthesis of S $i_{1-x}$ Cx (x=0.016) epitaxial layer using ion implantation and solid phase epitaxy (SPE). The activation energy Ea was obtained for the loss of substitutional carbon using fourier transform-infrared spectroscopy (FTIR) and high-resolution x-ray diffraction (HR-XRD). In FTIR analysis, the integrated peak intensity was used to quantify the loss of carbon atoms from substitutional to interstitial sites during annealing. The substitutional carbon contents in S $i_{0.984}$ $C_{0.016}$ were also measured using HR-XRD. By dynamic simulations of x-ray rocking curves, the fraction of substitutional carbon was obtained. The effects of annealing temperature and time were also studied by comparing vacuum furnace annealing with rapid thermal annealing (RTA))))))