• Title/Summary/Keyword: High speed interconnects

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Analysis and Design Optimization of Interconnects for High-Speed LVDS Applications (고속 LVDS 응용을 위한 전송선 분석 및 설계 최적화)

  • Ryu, Jee-Youl;Noh, Seok-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.10
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    • pp.70-78
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    • 2009
  • This paper addresses the analysis and the design optimization of differential interconnects for high-speed Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and trace space in differential printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, and time-domain transient simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects. We believe that the proposed approach is very helpful to optimize high-speed differential FPCB interconnects for LVDS applications.

The Propagation Delay Model of the Interconnects in the High-Speed VLSI circuit (고속 VLSI회로에서 전송선의 지연시간 모델)

  • 윤성태;어영선
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.975-978
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    • 1999
  • The transmission line effects of IC interconnects have a substantial effect on a hish-speed VLSI circuit performance. The effective transmission lime parameters are changed with the increase of the operation frequency because of the skin of the skin effect, proximity effect, and silicon substrate. A new signal delay estimation methodology based on the RLC-distributed circuit model is presented [2]. The methodology is demonstrated by using SPICE simulation and a high-frequency experiment technique.

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Effects of Mesh Planes on Signal Integrity in Glass Ceramic Packages for High-Performance Servers

  • Choi, Jinwoo;Altabella Lazzi, Dulce M.;Becker, Wiren D.
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.2
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    • pp.35-50
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    • 2013
  • This paper discusses effects of mesh planes on signal integrity in high-speed glass ceramic packages. One of serious signal integrity issues in high-speed glass ceramic packages is high far-end (FE) noise coupling between signal interconnects. Based on signal integrity analysis, a methodology is presented for reducing far-end noise coupling between signal interconnects in high-speed glass ceramic modules. This methodology employing power/ground mesh planes with alternating spacing and a via-connected coplanar-type shield (VCS) structure is suggested to minimize far-end noise coupling between signal lines in high-speed glass ceramic packages. Optimized interconnect structure based on this methodology has demonstrated that the saturated far-end noise coupling of a typical interconnect structure in glass ceramic modules could be reduced significantly by 73.3 %.

Signal Integrity Analysis of High Speed Interconnects In PCB Embedded with EBG Structures

  • Sindhadevi, M.;Kanagasabai, Malathi;Arun, Henridass;Shrivastav, A. K.
    • Journal of Electrical Engineering and Technology
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    • v.11 no.1
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    • pp.175-183
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    • 2016
  • This paper brings out a novel method for reducing Near end and Far end Crosstalk using Electromagnetic Band Gap structures (EBG) in High Speed RF transmission lines. This work becomes useful in high speed closely spaced Printed Circuit Board (PCB) traces connected to multi core processors. By using this method, reduction of −40dB in Near-End Crosstalk (NEXT) and −60 dB in Far End Crosstalk (FEXT) is achieved. The results are validated through experimental measurements. Time domain analysis is performed to validate the signal integrity property of coupled transmission lines.

Electrical Parameter Extraction of High Performance Package Using PEEC Method

  • Pu, Bo;Lee, Jung-Sang;Nah, Wan-Soo
    • Journal of electromagnetic engineering and science
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    • v.11 no.1
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    • pp.62-69
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    • 2011
  • This paper proposes a novel electrical characterization approach for a high-performance package system using an improved Partial Element Equivalent Circuit (PEEC). As the effect of interconnects becomes a pivotal factor for the performance of high-speed electronic systems, there is a great demand for an accurate equivalent model for interconnects. In particular, an equivalent model of interconnects is established in this paper for the Fine-Pitch Ball Grid Array (FBGA) package using the improved PEEC method. Based on the equivalent model, electrical characteristics are analyzed; furthermore, these are verified through the measurement results of a Vector Network Analyzer (VNA).

Analysis of read speed latency in 6T-SRAM cell using multi-layered graphene nanoribbon and cu based nano-interconnects for high performance memory circuit design

  • Sandip, Bhattacharya;Mohammed Imran Hussain;John Ajayan;Shubham Tayal;Louis Maria Irudaya Leo Joseph;Sreedhar Kollem;Usha Desai;Syed Musthak Ahmed;Ravichander Janapati
    • ETRI Journal
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    • v.45 no.5
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    • pp.910-921
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    • 2023
  • In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperaturedependent Cu and multilayered graphene nanoribbon (MLGNR)-based nanointerconnect materials is used throughout the circuit (primarily bit/bit-bars [red lines] and word lines [write lines]). Here, the read speed analysis is performed with four different chip operating temperatures (150K, 250K, 350K, and 450K) using both Cu and graphene nanoribbon (GNR) nano-interconnects with different interconnect lengths (from 10 ㎛ to 100 ㎛), for reading-0 and reading-1 operations. To execute the reading operation, the CMOS technology, that is, the16-nm PTM-HPC model, and the16-nm interconnect technology, that is, ITRS-13, are used in this application. The complete design is simulated using TSPICE simulation tools (by Mentor Graphics). The read speed latency increases rapidly as interconnect length increases for both Cu and GNR interconnects. However, the Cu interconnect has three to six times more latency than the GNR. In addition, we observe that the reading speed latency for the GNR interconnect is ~10.29 ns for wide temperature variations (150K to 450K), whereas the reading speed latency for the Cu interconnect varies between ~32 ns and 65 ns for the same temperature ranges. The above analysis is useful for the design of next generation, high-speed memories using different nano-interconnect materials.

Trends in High Speed Fabric-Interconnect-Based Memory Centric Computing Architecture (고속 패브릭 연결망 기반 메모리 중심 컴퓨팅 기술 동향)

  • S.-J. Cha;S.-W. Sok;H.J. Kwon;Y.W. Kim;J. Kim;H.Y. Kim;K.-W. Koh;K.-H. Kim
    • Electronics and Telecommunications Trends
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    • v.39 no.5
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    • pp.98-107
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    • 2024
  • Applications such as artificial intelligence continue to grow in complexity and scale. Thus, the demand for scalable computing is increasing for achieving faster data processing and improved efficiency. This requirement has led to the development of memory-centric computing and high-speed fabric interconnection technologies. Memory-centric computing reduces the latency and enhances the system performance by shifting the focus from the central processing unit to the memory, whereas high-speed fabric interconnects enable efficient data transfer across various computing resources. Technologies such as Gen-Z, OpenCAPI, and CCIX have been integrated into the CXL (Compute Express Link) standard since 2019 to improve communication and cache coherence. Ethernet-based interconnects such as RoCE, InfiniBand, and OmniXtend also play a crucial role in providing high-speed data transfer and low latency. We explore the latest trends and prospects of these technologies, highlighting their benefits and applications.

Analysis and Design Optimization of Interconnects for High-Speed LVDS Applications (고속 LVDS 응용을 위한 전송 접속 경로의 분석 및 설계 최적화)

  • Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.761-764
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    • 2007
  • This paper addresses the analysis and the design optimization of differential interconnects for Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and πace space in differential flexible printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, time-domain transient simulations, and S-parameter simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects.

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The Technology of Gigabit Interconnects for Communication Systems (통신시스템 기가비트 연결 설계기술)

  • 남상식;박종대
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.149-153
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    • 1999
  • As VLSI technology advances rapidly, the operating frequency of digital systems becomes very fast. In such a high-speed system, there are many factors that threaten signal integrity. The noise sources in digital system include the noises in power supply, ground bounce and packaging media and distortions on single and multiple transmission lines. This paper will present a technology survey useful in the design of Gigabit interconnection systems. Some case studies have been constructed which show the lossy transmission line effect of skin effect. dielectric loss, with backplane connectors using the theoretical and practical conditions.

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