• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• 대한전자공학회논문지SD
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• 제37권3호
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• pp.1-5
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• 2000

나선형태의 평면 안테나를 갖는 유도결합형 플라즈마를 이용하여 PZT용 Pt/RuO/sub 2/ 전극을 건식식각하였다. 누설전류 억제특성이 우수한 Pt와 건식식각이 용이한 RuO/sub 2/ 박막의 장점을 동시에 이용하기 위하여 PZT의 하부전극으로 Pt/RuO/sub 2/의 2중층을 시도하였다. 우선 Pt와 RuO/sub 2/ 박막 각각에 대하여 플라즈마의 여러 조건에 따라 식각율과 선택비를 조사하였다. 조사된 공정기체는 O/sub 2/ 와 Cl/sub 2/ 의 혼합기체이며, 패터닝을 위해 사용한 마스크재료는 SiO/sub 2/ 산화막이었다. Cl/sub 2/ 의 함량이 증가함에 따라 Pt의 식각율은 점점 증가하지만, RuO/sub 2/의 경우에는 Cl/sub 2/의 함량이 처음 10% 정도가지 증가할 때에는 RuO/sub 2/의 식각율이 급격히 증가하지만 더 이상의 Cl/sub 2/ 함량에서는 식각율이 점차 감소하였다. Pt/RuO/sub 2/의 2중층을 동시에 식각하기 위한 최적의 기체혼합비를 구하였으며, 0.5 마이크론급의 미세패터닝을 시도하였다.

• 한국진공학회지
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• 제7권4호
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• pp.390-396
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• 1998

헬리콘(Helicon) 플라즈마로부터 중성입자 흐름을 생성하여 높은 에너지의 이온에 의한 기판의 물리적, 전기적 손상을 방지할 수 있는 실리콘 식각공정이 연구되었다. 기판의 하부에 영구자석을 설치하여 cusp모양의 자계를 형성하므로써 이온 및 전자를 기판으로부 터 제거되도록 하였고 이러한 방법으로 완전히 제거되지 않는 이온의 제거를 위해서 기판 하부에 양의 전압을 가하여 자계나 전계에 영향을 받지 않는 중성입자 흐름을 얻을 수 있도 록 하였다. 발생시킨 자계 및 전계의 의해 기판 상부에서의 전자밀도는 자계나 전계가 가해 지지 않은 경우에 비해 약1/1,000정도로 낮아졌으며, 이온밀도 또한 약1/10정도로 감소하였 다. 이러한 공정을 통해 얻어진 실리콘의 식각속도는 $Cl_2$와 10%의 SF6를 혼합하여 사용할 때 $8.5{\times}10^{-4}$Torr의 압력에서 약100$\AA$/min이하로 매우 낮았으며 실리콘의 식각이 비등방성 을 가지며 진행될 수 있음이 보여졌다.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.72-77
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• 2021

The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R² value. It means that the etch rate distribution is explained by the ion energy flux.

• 한국진공학회지
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• 제8권4A호
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• pp.490-495
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• 1999

In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• 한국진공학회지
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• 제6권3호
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• pp.287-292
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• 1997

본 실험은 고밀도 플라즈마원인 inductively coupled plasma(ICP)를 이용하여 실리카 도파로의 코아를 형성하고자 하였다. $CF_4/CHF_3$유량비, bias power 및 source power 등의 변화에 따른 산화막의 식각 특성 즉 식각 속도, 식각 단면 및 식각된 표면의 거칠기 등의 변화를 검토하였다. 또한 single Langmuir probe 및 optical emission spectroscopy(OES)를 이용하여, 식각 변수에 따른 ICP의 플라즈마 특성을 관찰하였다. 이상의 결과를 토대로, $SiO_2-P_2O_5$로 구성된 실리카 도파로의 코아(core)층을 형성하였고, 이때 최적화된 식각 조건 에서 식각 속도는 380nm/min이고, 마스크 층으로 사용된 Al(Si 1%)와 산화막과의 식각 선 택비는 30:1이상이였다. 형성된 실리카 도파로를 scanning electron microscopy(SEM)으로 관찰한 결과, 코아층의 식각 단면이 수직하고 패턴 선폭의 손실이 거의 없음을 확인하였다.