• 한국재료학회지
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• 제24권4호
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• pp.180-185
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• 2014

The current concern about these materials ($MoSi_2$ and $NbSi_2$) focuses on their low fracture toughness below the ductile-brittle transition temperature. To improve the mechanical properties of these materials, the fabrication of nanostructured and composite materials has been found to be effective. Nanomaterials frequently possess high strength, high hardness, excellent ductility and toughness, and more attention is being paid to their potential application. In this study, nanopowders of Mo, Nb, and Si were fabricated by high-energy ball milling. A dense nanostructured $MoSi_2-NbSi_2$ composite was simultaneously synthesized and sintered within two minutes by high-frequency induction heating method using mechanically activated powders of Mo, Nb, and Si. The high-density $MoSi_2-NbSi_2$ composite was produced under simultaneous application of 80MPa pressure and an induced current. The sintering behavior, mechanical properties, and microstructure of the composite were investigated. The average hardness and fracture toughness values obtained were $1180kg/mm^2$ and $3MPa{\cdot}m^{1/2}$, respectively. These fracture toughness and hardness values of the nanostructured $MoSi_2-NbSi_2$ composite are higher than those of monolithic $MoSi_2$ or $NbSi_2$.

• 한국세라믹학회지
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• 제49권6호
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• pp.608-613
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• 2012

We investigated the property changes of MgO powders sintered at temperatures ranging from $700^{\circ}C$ to $1900^{\circ}C$ for 5minutes at a pressure of 2.7 GPa for a high-pressure high-temperature(HPHT) diamond synthesis process. The physical properties of the sintered MgO powders were characterized by optical microscopy, field emission scanning electron microscopy (FE-SEM), Vickers hardness tests, and by the apparent density, and X-ray diffractometry. An optical micro-analysis showed that white MgO powders became black after sintering due to carbon contamination from the graphite heat source. FE-SEM revealed the growth in the grain size of the MgO powders from $0.3{\mu}m$ to $50{\mu}m$ after sintering at $1700^{\circ}C$. The hardness and apparent density increased to $1800^{\circ}C$ while the samples were dedensified at $1900^{\circ}C$ due to the growth of isolated pores. According to the XRD analysis, no phase transformation occurred in the MgO powders. These results suggest that HPHT-sintered MgO powders can show an accelerated sintering process characterized by grain neck growth, pore connections, isolated pore growth and dedensification in 5 minutes, while these processes with the conventional sintering process take at least 5 hours.

• 한국분말재료학회지
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• 제16권6호
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• pp.416-423
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• 2009

Diamond/SiC composites are appropriate candidate materials for heat conduction as well as high temperature abrasive materials because they do not form liquid phase at high temperature. Diamond/SiC composite consists of diamond particles embedded in a SiC binding matrix. SiC is a hard material with strong covalent bonds having similar structure and thermal expansion with diamond. Interfacial reaction plays an important role in diamond/SiC composites. Diamond/SiC composites were fabricated by high temperature and high pressure (HPHT) sintering with different diamond content, single diamond particle size and bi-modal diamond particle size, and also the effects of composition of diamond and silicon on microstructure, mechanical properties and thermal properties of diamond/SiC composite were investigated. The critical factors influencing the dynamics of reaction between diamond and silicon, such as graphitization process and phase composition, were characterized. Key factor to enhance mechanical and thermal properties of diamond/SiC composites is to keep strong interfacial bonding at diamond/SiC composites and homogeneous dispersion of diamond particles in SiC matrix.

• 대한금속재료학회지
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• 제49권9호
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• pp.678-685
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• 2011

The aim of this study was to determine the effect of applied pressure and sintering temperature on the microstructure and mechanical properties for spark plasma sintering (SPS) from commercial pure titanium (CP-Ti) powders. Spark plasma sintering is a relatively new sintering technique in powder metallurgy which is capable of sintering metal and ceramic powers quickly to full density at a fairly low temperature due to its unique features. SPS of -200 mesh or -400 mesh CP-Ti powders was carried out in an $Ar+H_2$ mixed gas flowing atmosphere between $650^{\circ}C$ and $750^{\circ}C$ under 10 to 80 MPa pressure. When SPS was carried out at relatively low temperatures ($650^{\circ}C$ to $750^{\circ}C$), the high (>60 MPa) pressure had a marked effect on densification and grain growth suppression. The full density of titanium was achieved at temperatures and pressures above $700^{\circ}C$ and 60 MPa by spark plasma sintering. The crystalline phase and microstructure of titanium sintered up to $700^{\circ}C$ consisted of ${\alpha}$-Ti and equiaxed grains. Vickers hardness ranging from 293 to 362 Hv and strength ranging from 304 to 410 MPa were achieved for spark plasma sintered titanium.

• 한국재료학회지
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• 제22권6호
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• pp.280-284
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• 2012

Bismuth antimony telluride (BiSbTe) thermoelectric materials were successfully prepared by a spark plasma sintering process. Crystalline BiSbTe ingots were crushed into small pieces and then attrition milled into fine powders of about 300 nm ~ 2${\mu}m$ size under argon gas. Spark plasma sintering was applied on the BiSbTe powders at 240, 320, and $380^{\circ}C$, respectively, under a pressure of 40 MPa in vacuum. The heating rate was $50^{\circ}C$/min and the holding time at the sintering temperature was 10 min. At all sintering temperatures, high density bulk BiSbTe was successfully obtained. The XRD patterns verify that all samples were well matched with the $Bi_{0.5}Sb_{1.5}Te_{3}$. Seebeck coefficient (S), electric conductivity (${\sigma}$) and thermal conductivity (k) were evaluated in a temperature range of $25{\sim}300^{\circ}C$. The thermoelectric properties of BiSbTe were evaluated by the thermoelectric figure of merit, ZT (ZT = $S^2{\sigma}T$/k). The grain size and electric conductivity of sintered BiSbTe increased as the sintering temperature increased but the thermal conductivity was similar at all sintering temperatures. Grain growth reduced the carrier concentration, because grain growth reduced the grain boundaries, which serve as acceptors. Meanwhile, the carrier mobility was greatly increased and the electric conductivity was also improved. Consequentially, the grains grew with increasing sintering temperature and the figure of merit was improved.

• 한국재료학회지
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• 제12권8호
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• pp.634-640
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• 2002

To improve the ductility of mTEX>$(Al +12.5%Cu)<_3$Zr intermetallics, which are the potential high temperature structural materials, the mechanical alloying behavior, the effect of pressure and temperature on the $Ll_2$, phase formation and the behavior of the cold isostatic press and sintering were investigated. However mechanically alloyed A1$_3$Zr alloy have been known to have high mechanical strength even at high temperature, its workability was poor. A method of solution is refined grain size and phase transformation from $DO_{23}$ to $Ll_2$.$ Ll_2$ structure TEX>$(Al+12.5%Cu)<_3$Zr with nanocrystalline microstructure intermetallic powders where were prepared by mechanical alloying of elemental powders. Grain sizes of the as milled powders were less than 10nm (from transmission electron microscopy, TEM). Thermal analyses showed that $Ll_2$ structure was stable up to$ 800^{\circ}C$ for 1hour $(Al+ 12.5%Cu)<_3$Zr. $(Al+12.5%Cu)<_3$Zr has been consolidated by cold isostatic pressing (CIP 138, 207, 276, 414MPa) at room temperature and subsequent heat treatment at high temperatures where $Ll_2$ structure was stable under vacuum atmosphere. The results showed that 94.2% density of Ll$_2$ compacts was obtained for the (Al +12.5%Cu)$_3$Zr by sintering at 80$0^{\circ}C$ for 1hour (under CIPed 207MPa). This compact of the grain size was 40nm.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.41-47
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• 2022

Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

• E2M - 전기 전자와 첨단 소재
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• 제1권1호
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• pp.26-34
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• 1988

Sintered CdS/CdTe solar cells have been farbricated by coating a (Cd+Te) slurry on sintered CdS films followed by the sintering at 625.deg.C for one hour with various heating rates. When cadmium and tellurinm powders are used instead of CdTe powder to form CdS/CdTe junction, CdTe is formed in the temperature range of 290.deg.C-400.deg.C. The microstructure of the CdTe films depends strongly on the heating rate of the sintering due to the low melting temperature and the high vapor pressure of the elemental Cd and Te. An optimum heating rate obtain CdTe films with uniform and dense microstructure which, in turn, improves the efficiency of the sintered CdS/CdTe solar cells. All-polycrystalline CdS/CdTe solar cells with an efficiency of 9.57% under 50mW/cm$^{2}$ tungsten light have been farbricated by using a heating rate of 14.deg.C/min.

• 한국분말재료학회지
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• 제22권4호
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• pp.283-288
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• 2015

Two sintering methods of a pressureless sintering and a spark-plasma sintering are tested to densify the Fe-TiC composite powders which are fabricated by high-energy ball-milling. A powder mixture of Fe and TiC is prepared in a planetary ball mill at a rotation speed of 500 rpm for 1h. Pressureless sintering is performed at 1100, 1200 and $1300^{\circ}C$ for 1-3 hours in a tube furnace under flowing argon gas atmosphere. Spark-plasma sintering is carried out under the following condition: sintering temperature of $1050^{\circ}C$, soaking time of 10 min, sintering pressure of 50 MPa, heating rate of $50^{\circ}C$, and in a vacuum of 0.1 Pa. The curves of shrinkage and its derivative (shrinkage rate) are obtained from the data stored automatically during sintering process. The densification behaviors are investigated from the observation of fracture surface and cross-section of the sintered compacts. The pressureless-sintered powder compacts show incomplete densification with a relative denstiy of 86.1% after sintering at $1300^{\circ}C$ for 3h. Spark-plasma sintering at $1050^{\circ}C$ for 10 min exhibits nearly complete densification of 98.6% relative density under the sintering pressure of 50 MPa.

• 공업화학
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• 제16권5호
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• pp.648-652
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• 2005

대기압하에서 소결이 어렵다고 알려진 초이온 전도체인 $K^+$-beta-aluminas를 attrition mill을 이용하여 약 350 nm의 평균 입도를 가지는 분말로 분쇄한 후, 시편을 일축가압 성형하여 상압 하에서 동일조성의 분위기 분말을 이용하여 소결하였다. 소결온도는 $1400^{\circ}C{\sim}1650^{\circ}C$까지 $50^{\circ}C$ 간격으로 소결하였으며, 각 소결온도에서 시간에 따른 소결특성을 살펴보았다. 또한 고온에서 입자 성장 속도를 조절하기 위하여 $1600^{\circ}C$에서 zone sintering을 실시하였다. $1600^{\circ}C$와 $1650^{\circ}C$에서 소결한 경우와 $1600^{\circ}C$에서 zone sintering한 시편의 경우, 각각 약 93%와 95%의 소결 밀도를 나타내었다. $1600^{\circ}C$ 이상의 온도에서 2 h 이상 장시간 소결할 경우, 입자의 거대성장으로 인하여 소결밀도가 90% 미만으로 감소하였다.