• Title/Summary/Keyword: High frequency model

Search Result 2,176, Processing Time 0.029 seconds

A Study on Core Structure of High Frequency Transformer to Improve Efficiency of Module-Integrated Converter

  • Yoo, Jin-Hyung;Jung, Tae-Uk
    • Journal of Magnetics
    • /
    • v.19 no.3
    • /
    • pp.295-299
    • /
    • 2014
  • Recently, module-integrated converter (MIC) research has shown interest in small-scale photovoltaic (PV) generation. The converter is capable of efficient power generation. In this system, the high frequency transformer should be made compact, and demonstrate high efficiency characteristics. This paper presents a core structure optimization procedure to improve the efficiency of a high frequency transformer of compact size. The converter circuit is considered in the finite element analysis (FEA) model, in order to obtain an accurate FEA result. The results are verified by the testing of prototypes.

HFFB technique and its validation studies

  • Xie, Jiming;Garber, Jason
    • Wind and Structures
    • /
    • v.18 no.4
    • /
    • pp.375-389
    • /
    • 2014
  • The high-frequency force-balance (HFFB) technique and its subsequent improvements are reviewed in this paper, including a discussion about nonlinear mode shape corrections, multi-force balance measurements, and using HFFB model to identify aeroelastic parameters. To apply the HFFB technique in engineering practice, various validation studies have been conducted. This paper presents the results from an analytical validation study for a simple building with nonlinear mode shapes, three experimental validation studies for more complicated buildings, and a field measurement comparison for a super-tall building in Hong Kong. The results of these validations confirm that the improved HFFB technique is generally adequate for engineering applications. Some technical limitations of HFFB are also discussed in this paper, especially for higher-order mode response that could be considerable for super tall buildings.

Frequency-Domain Balanced Stochastic Truncation for Continuous and Discrete Time Systems

  • Shaker, Hamid Reza
    • International Journal of Control, Automation, and Systems
    • /
    • v.6 no.2
    • /
    • pp.180-185
    • /
    • 2008
  • A new method for relative error continuous and discrete time model order reduction is proposed. The reduction technique is based on two recently developed methods, namely frequency domain balanced truncation within a frequency bound and inner-outer factorization techniques. The proposed method is of interest for practical model order reduction because in this context it shows to keep the accuracy of the approximation as high as possible without sacrificing the computational efficiency. Numerical results show the accuracy and efficiency enhancement of the method.

Cointegration Analysis with Mixed-Frequency Data of Quarterly GDP and Monthly Coincident Indicators

  • Seong, Byeongchan
    • The Korean Journal of Applied Statistics
    • /
    • v.25 no.6
    • /
    • pp.925-932
    • /
    • 2012
  • The article introduces a method to estimate a cointegrated vector autoregressive model, using mixed-frequency data, in terms of a state-space representation of the vector error correction(VECM) of the model. The method directly estimates the parameters of the model, in a state-space form of its VECM representation, using the available data in its mixed-frequency form. Then it allows one to compute in-sample smoothed estimates and out-of-sample forecasts at their high-frequency intervals using the estimated model. The method is applied to a mixed-frequency data set that consists of the quarterly real gross domestic product and three monthly coincident indicators. The result shows that the method produces accurate smoothed and forecasted estimates in comparison to a method based on single-frequency data.

A Study on the Nonlinear Resistance Model of a F/L Operating in High Frequency (고주파 점등 형광램프의 비선형 저항 모델에 관한 연구)

  • 지철근;장우진
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.1 no.2
    • /
    • pp.49-56
    • /
    • 1987
  • To save energy consumption, it is proposed to operate a discharge lamp with high frequency power. When designing a high frequency operating circuit containing a discharge lamp, the character of a lamp may be needed. And there are various methods to get and models for this. In this study, to present the volt-ampere character of a fluorescent lamp which gives a good saving effect, the nonlinear resistance model is suggested. And the validity of the model is verified by applying the model for the circuits with inductor ballast and capacifor ballast. This model, in contrast with the others, can be easily obtainable. And for comparison, the model using a modified Francis equation is examined. The method used in this study can be basically applied to the other discharge lamps. As a result, 1) Approximated 3rd order polynomial of nonlinear resistance model gives a good simulation result. 2) When operating in high frequency, the model using a modified Francis equation with constant coefficients can't be applied.

  • PDF

Short Channel Analytical Model for High Electron Mobility Transistor to Obtain Higher Cut-Off Frequency Maintaining the Reliability of the Device

  • Gupta, Ritesh;Aggarwal, Sandeep Kumar;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.7 no.2
    • /
    • pp.120-131
    • /
    • 2007
  • A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

A Model Reduction and PID Controller Design Via Frequency Transfer Function Synthesis (주파수 전달함수 합성법에 의한 모델축소 및 PID 제어기 설계)

  • Kim, Ju-Sik;Kwang, Myung-Shin;Kim, Jong-Gun;Jeon, Byeong-Seok;Jeong, Su-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.54 no.1
    • /
    • pp.34-40
    • /
    • 2005
  • This paper presents a frequency transfer function synthesis for simplifying a high-order model with time delay to a low-order model. A model reduction is based on minimizing the error function weighted by the numerator polynomial of reduced systems. The proposed method provides better low frequency fit and a computer aided algorithm. And in this paper, we present a design method of PID controller for achieving the desired specifications via the reduced model. The proposed method identifies the parameter vector of PID controller from a linear system that develops from rearranging the two dimensional input matrices and output vectors obtained from the frequency bounds.

Estimation of Effects of Underwater Acoustic Channel Capacity Due to the Bubbles in the High Frequency Near the Coastal Area

  • Zhou, Guoqing;Shim, Tae-Bo;Kim, Young-Gyu
    • The Journal of the Acoustical Society of Korea
    • /
    • v.27 no.3E
    • /
    • pp.69-76
    • /
    • 2008
  • Measurements of bubble size and distribution in the surface layer of the sea, wind speed, and variation of ocean environments were made continually over a four-day period in an experiment conducted in the South Sea of Korea during 17-20 September 2007. Theoretical background of bubble population model indicates that bubble population is a function of the depth, range and wind speed and bubble effects on sound speed shows that sound speed varies with frequency. Observational evidence exhibited that the middle size bubble population fit the model very well, however, smaller ones can not follow the model probably due to their short lifetime. Meanwhile, there is also a hysteresis effect of void fraction. Observational evidence also indicates that strong changes in sound speed are produced by the presence of swarms of micro bubbles especially from 7 kHz to 50 kHz, and calculation results are consistent with the measured data in the high frequency band, but inconsistent in the low frequency band. Based on the measurements of the sound speed and high frequency transmission configuration in the bubble layer, we present an estimation of underwater acoustic channel capacity in the bubble layer.

Volatility for High Frequency Time Series Toward fGARCH(1,1) as a Functional Model

  • Hwang, Sun Young;Yoon, Jae Eun
    • Quantitative Bio-Science
    • /
    • v.37 no.2
    • /
    • pp.73-79
    • /
    • 2018
  • As high frequency (HF, for short) time series is now prevalent in the presence of real time big data, volatility computations based on traditional ARCH/GARCH models need to be further developed to suit the high frequency characteristics. This article reviews realized volatilities (RV) and multivariate GARCH (MGARCH) to deal with high frequency volatility computations. As a (functional) infinite dimensional models, the fARCH and fGARCH are introduced to accommodate ultra high frequency (UHF) volatilities. The fARCH and fGARCH models are developed in the recent literature by Hormann et al. [1] and Aue et al. [2], respectively, and our discussions are mainly based on these two key articles. Real data applications to domestic UHF financial time series are illustrated.

Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications

  • Gupta, Ritesh;Aggarwal, Sandeep Kr;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.6 no.3
    • /
    • pp.189-198
    • /
    • 2006
  • A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.