• Journal of Magnetics
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• 제19권3호
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• pp.295-299
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• 2014

Recently, module-integrated converter (MIC) research has shown interest in small-scale photovoltaic (PV) generation. The converter is capable of efficient power generation. In this system, the high frequency transformer should be made compact, and demonstrate high efficiency characteristics. This paper presents a core structure optimization procedure to improve the efficiency of a high frequency transformer of compact size. The converter circuit is considered in the finite element analysis (FEA) model, in order to obtain an accurate FEA result. The results are verified by the testing of prototypes.

• Wind and Structures
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• 제18권4호
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• pp.375-389
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• 2014

The high-frequency force-balance (HFFB) technique and its subsequent improvements are reviewed in this paper, including a discussion about nonlinear mode shape corrections, multi-force balance measurements, and using HFFB model to identify aeroelastic parameters. To apply the HFFB technique in engineering practice, various validation studies have been conducted. This paper presents the results from an analytical validation study for a simple building with nonlinear mode shapes, three experimental validation studies for more complicated buildings, and a field measurement comparison for a super-tall building in Hong Kong. The results of these validations confirm that the improved HFFB technique is generally adequate for engineering applications. Some technical limitations of HFFB are also discussed in this paper, especially for higher-order mode response that could be considerable for super tall buildings.

• International Journal of Control, Automation, and Systems
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• 제6권2호
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• pp.180-185
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• 2008

A new method for relative error continuous and discrete time model order reduction is proposed. The reduction technique is based on two recently developed methods, namely frequency domain balanced truncation within a frequency bound and inner-outer factorization techniques. The proposed method is of interest for practical model order reduction because in this context it shows to keep the accuracy of the approximation as high as possible without sacrificing the computational efficiency. Numerical results show the accuracy and efficiency enhancement of the method.

• 응용통계연구
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• 제25권6호
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• pp.925-932
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• 2012

The article introduces a method to estimate a cointegrated vector autoregressive model, using mixed-frequency data, in terms of a state-space representation of the vector error correction(VECM) of the model. The method directly estimates the parameters of the model, in a state-space form of its VECM representation, using the available data in its mixed-frequency form. Then it allows one to compute in-sample smoothed estimates and out-of-sample forecasts at their high-frequency intervals using the estimated model. The method is applied to a mixed-frequency data set that consists of the quarterly real gross domestic product and three monthly coincident indicators. The result shows that the method produces accurate smoothed and forecasted estimates in comparison to a method based on single-frequency data.

• 한국조명전기설비학회지:조명전기설비
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• 제1권2호
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• pp.49-56
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• 1987

에너지 절약을 위하여 방전등을 고조파 전원으로 동작시킨다. 방전등을 포함한 고조파 전원 회로를 설계할 경우, 램프의 특성을 알아야하며, 이에 많은 방법과 수식 모델이 제안되고 있다. 본 연구에서는, 에너지 절약 효과가 큰, 형광램프의 전압-전류 특성을 나타내기 위하여, 비선형 저항 모델을 제안하고, 이를 인덕터 및 커패시터 안정기를 사용한 회로에 적용, 그 유용성을 검증하였다. 이 수식 모델은 다른 모델과는 달리 비교적 쉽게 얻을 수 있다. 또한, 비교를 위하여, 수정된Francis 방정식을 이용한 방법을 검사하였다. 본 연구에 사용된 방법은 기본적으로 다른 방전등에도 적용이 될 수 있다. 결과로서, 1) 3차 다항식의 비선형 저항 모델로 좋은 결과를 얻을 수 있다. 2) 고조파 점등시, 상수 계수를 사용하는 수정된 Francis 방정식은 적용할 수 없다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• 전기학회논문지P
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• 제54권1호
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• pp.34-40
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• 2005

This paper presents a frequency transfer function synthesis for simplifying a high-order model with time delay to a low-order model. A model reduction is based on minimizing the error function weighted by the numerator polynomial of reduced systems. The proposed method provides better low frequency fit and a computer aided algorithm. And in this paper, we present a design method of PID controller for achieving the desired specifications via the reduced model. The proposed method identifies the parameter vector of PID controller from a linear system that develops from rearranging the two dimensional input matrices and output vectors obtained from the frequency bounds.

• The Journal of the Acoustical Society of Korea
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• 제27권3E호
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• pp.69-76
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• 2008

Measurements of bubble size and distribution in the surface layer of the sea, wind speed, and variation of ocean environments were made continually over a four-day period in an experiment conducted in the South Sea of Korea during 17-20 September 2007. Theoretical background of bubble population model indicates that bubble population is a function of the depth, range and wind speed and bubble effects on sound speed shows that sound speed varies with frequency. Observational evidence exhibited that the middle size bubble population fit the model very well, however, smaller ones can not follow the model probably due to their short lifetime. Meanwhile, there is also a hysteresis effect of void fraction. Observational evidence also indicates that strong changes in sound speed are produced by the presence of swarms of micro bubbles especially from 7 kHz to 50 kHz, and calculation results are consistent with the measured data in the high frequency band, but inconsistent in the low frequency band. Based on the measurements of the sound speed and high frequency transmission configuration in the bubble layer, we present an estimation of underwater acoustic channel capacity in the bubble layer.

• Quantitative Bio-Science
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• 제37권2호
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• pp.73-79
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• 2018

As high frequency (HF, for short) time series is now prevalent in the presence of real time big data, volatility computations based on traditional ARCH/GARCH models need to be further developed to suit the high frequency characteristics. This article reviews realized volatilities (RV) and multivariate GARCH (MGARCH) to deal with high frequency volatility computations. As a (functional) infinite dimensional models, the fARCH and fGARCH are introduced to accommodate ultra high frequency (UHF) volatilities. The fARCH and fGARCH models are developed in the recent literature by Hormann et al. [1] and Aue et al. [2], respectively, and our discussions are mainly based on these two key articles. Real data applications to domestic UHF financial time series are illustrated.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.189-198
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• 2006

A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.