• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.6-10
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• 2001

Ultrafine $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ solid solution powders synthesized by the glycine-nitrate process, with specific surface areas of $19-23\;\textrm{m}^2$/g were sintered at $1500^{\circ}C$ for various sintering times and then their electrical characteristics were investigated using AC impedance and four-point probe measurements. The electrical resistivity of the sintered $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ bodies showed the minimum value at the sintering time of 10 hrs. The minimum total resistivity of the $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ bodies sintered at $1500^{\circ}C$ for 10 hrs seems to result from the lowest activation energy for the electrical resistivity by the combination between the activation energies for the resistivities at the grain interior and grain boundary.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.129-136
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• 2001

The remaining life estimation for the aged components in power plants as well as chemical plants are very important beacuse mechanical properties of the components are degraded with time of service exposure in high temperature. Since it is difficult to take specimens from the operating components to evaluate mechanical properties of components, nondestructive techniques are needed to estimate the degradation. In this study, test materials with 4 different degradation levels were prepared by isothermal aging heat treatment at $630^{\circ}C$. And the DC potential drop method and destructive methods such as tensile, $K_{IC}$ and hardness tests were used in order to evaluate the degradation of 1Cr-1Mo-0.25V steels. The objective of this study is to investigate the possibility of the application of DCPD method to estimate the material degradation, and to analyse the relationship between the electrical resistivity and the degree of material degradation.

• 한국지구물리탐사학회:학술대회논문집
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• 2009.05a
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• pp.73-87
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• 2009

Geophysical survey for unconformity-type uranium deposit applied to this study area in Athabaska Basin, Canada were carried out airborne TEM and magnetic, resistivity-induced polarization (DC-IP), puser seismic reflection and well-logging method. The results of airborne survey interpreted the lithological boundary, geological structures, and conductors. Also, these results decided to main targets for ground DC-IP survey. The Low resistivity and the high chargeability slices of 3D modeling interpreted from DC-IP survey response for conductors related to hydrothermal alteration zones and fault-controlled graphitic zones occurring at the unconformity-type uranium deposit, and they confirmed by diamond drilling. Seismic results interpreted to lake bottom surface, alluvium layer and intra-sandstone faults. We suggest the resonable field data acquisition of DC-IP method on the land or the lake in Athabaska Basin.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.14-17
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• 2005

The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.116-119
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• 2005

Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.991-993
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• 1999

The method of measurement for contactless eddy-current conductivity using magnetic dipole field theory was suggested by M.C Chen[1], which calculate the eddy-current caused by exciting coil with Faraday's induction law. In this work, we have developed the apparatus for contactless measurement of conductivity or resistivity with the dipole field theory. The resistivity can be measured from several to a dozen $m{\Omega}{\cdot}cm$ range within maximum 30% error. At the high resistivity range above $100{\Omega}{\cdot}cm$, the standard deviation of measurement was very large as the induced voltage of sensing coil is small so it was difficult to measure the value precisely.

• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.231-236
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• 2007

Electrical resistivity, self-potential and time-domain induced polarization methods were conducted for study of electrical responses on vein-type sulfides ore, which is intruding limestone and dolomite of Ordovician, of Geumpung mine located in Dojeon-ri, Susan-myeon, Jecheon-si, Chungbuk. Sulfides bearing chalcopyrite, pyrrhotite and galena etc. are deposited in disseminated or vein-type. Good result that resistivity and self-potential surveys detect high grade-estimated mineralized zone located in upper part of existing low grade ore zone is acquisited and is to some extent consistent with induced polarization. Furthmore, a new mineralization zone directing EW is detected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.82-83
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• 2008

AI doped ZnO (AZO) films, and intentionally Zn added AZO (ZAZO) films were prepared on Corning glass by rf magnetron sputtering, and the electrical, optical, and structural properties of the as-deposited films together with the air annealed films were investigated. The resistivity of the AZO films increased with increasing substrate temperature and having minimum resistivity at $150^{\circ}C$. At the high temperature, the ZAZO films showed improved electrical properties better than the AZO films due.to increase in both the carrier concentration and.the Hall mobility. Upon air annealing at $500^{\circ}C$, the resistivity of both AZO and ZAZO films increased substantially, but the relative amount of degradation was smaller for films deposited at $450^{\circ}C$ than the films deposited at $150^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.207-210
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• 1999

The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.