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http://dx.doi.org/10.4313/TEEM.2005.6.1.014

Characterization of SrRuO3 Conducting Thin Films Grown on p-Si (100) Substrates by Metalorganic Chemical Vapor Deposition  

Cuong Nguyen Duy (Department of Materials Science and Engineering, Chungnam National University)
Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.6, no.1, 2005 , pp. 14-17 More about this Journal
Abstract
The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.
Keywords
Resistivity; MOCVD;
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