Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of SrRuO3 Conducting Thin Films Grown on p-Si (100) Substrates by Metalorganic Chemical Vapor Deposition

  • Cuong Nguyen Duy (Department of Materials Science and Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • Published : 2005.02.01
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Abstract

The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.

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References

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