• 제목/요약/키워드: High Power Dissipation

검색결과 367건 처리시간 0.025초

디레이팅을 고려한 한국형발사체 S-밴드 송신기 전원부 설계 (Power Design of an S-Band Transmitter for KSLV-II with Derating)

  • 김석권;김성완;홍승현;김효종
    • 한국전자파학회논문지
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    • 제30권5호
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    • pp.339-347
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    • 2019
  • 본 논문에서는 한국형발사체 탑재용 S-밴드 송신기의 전원부 설계에서 소자의 신뢰성 향상을 위하여 정격 대비 부하를 경감하는 디레이팅을 고려하였다. 송신기의 전원부는 정전압 공급을 위한 선형 전압 레귤레이터, 스위칭 타입의 DC/DC 컨버터와 역전압 보호를 위한 다이오드 등으로 구성된다. 설계에 따른 각 소자의 부하 전류를 분석하여 디레이팅 요구조건을 살펴보았으며, 부하 전류에 따른 발열량과 접합 온도 상승을 고려하였다. 송신기 엔지니어링 모델 제작결과와 분석결과를 비교하였으며, 고온 수락시험 $+60^{\circ}C$ 환경에서 전원부 주요 소자의 온도는 정격 대비 $40^{\circ}C$ 이상 여유가 있으며, 디레이팅 요구조건이 충족됨을 확인하였다.

KTX-1 고속전철의 병렬부하형 IGBT 제동초퍼장치 설계에 관한 연구 (A New Design on the Parallel Load Type IGBT Brake Chopper System for KTX-1 High Speed Train)

  • 윤차중;노명규;이을재
    • 전기학회논문지
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    • 제62권3호
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    • pp.424-430
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    • 2013
  • This paper presents a new design works for the braking chopper system which is included in the propulsion system of KTX high speed train. Due to the current fed type synchronous motors used in the propulsion system, some different behaviors are shown comparing to the voltage type other chopper systems. Specially this chopper system acts either braking controlling or regenerative power controlling system with a parallel resistive load in the propulsion system. In this paper, an improved simple high power IGBT brake chopper system has proposed which is able to be replaced with an existing complicated GTO chopper system. The analytical approaches to the parallel load type current chopper system and the propper snubber circuits calculation were explained in this paper to control new chopper system. In addition, the thermal resistance of the cooling system for power dissipation of IGBT modules was calculated also. Finally several PC simulations have been done to clarify its availability.

A Low-Power Low-Complexity Transmitter for FM-UWB Systems

  • Zhou, Bo;Wang, Jingchao
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권2호
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    • pp.194-201
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    • 2015
  • A frequency modulated ultra-wideband (FM-UWB) transmitter with a high-robust relaxation oscillator for subcarrier generation and a dual-path Ring VCO for RF FM is proposed, featuring low power and low complexity. A prototype 3.65-4.25 GHz FM-UWB transceiver employing the presented transmitter is fabricated in $0.18{\mu}m$ CMOS for short-range wireless data transmission. Experimental results show a bit error rate (BER) of $10^{-6}$ at a data rate of 12.5 kb/s with a communication distance of 60 cm is achieved and the power dissipation of 4.3 mW for the proposed transmitter is observed from a 1.8 V supply.

논문 : 다목적 실용위성 2 호 고전력 소산 전장품의 열부하 완하에 관한 연구 (Papers : A Study on Heat Mitigation for KOMPSAT - 2 High Heat Dissipation Electronic Boxes)

  • 박진한;장영근
    • 한국항공우주학회지
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    • 제30권3호
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    • pp.77-86
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    • 2002
  • 위성은 일단 한 번 발사하고 나면 운용궤도상에서 수리 및 회수가 거의 불가능하기 때문에 위성에 들어가는 모든 개발 부품들은 완벽한 설계, 충분한 해석, 고 작업도의 제작, 그리고 다양한 시험이 반드시 수반되어야 한다. 위성시스템에서 전자 소자의 신뢰성에 영향을 주는 인자는 다양하다. 과도한 열은 전자소자의 실패를 유발해서 결과적으로는 전체 위성의 실패를 유도할 수 있다. 이 논문에서는 다목적 실용위성 2호의 고전력 소산 전장품의 열부하 완화를 위한 방안을 경우별로 연구 비교하였다. 고전력 소산 전장품의 열부하를 완화하기 위해서는 하우징 두께의 증가가 필요하며, 전력조절기의 다이오드나 트랜지스터처럼 전력소산이 큰 소자에 대해서는 장착위치를 변경하거나 장착 부분의 열전도율을 증가시키는 방법이 필요하다. 또한 전력조절기처럼 장착면이 좁은 경우에는 복사의 영향이 크며, 이러한 전장품의 열부하를 완화하기 위해서는 주위 벽면의 온도를 낮추거나 하우징 표면 방사율을 증가시키는 방법이 효과적임이 알 수 있다.

멀티스케일 해석을 통한 히스테리시스 고무 마찰 예측 연구 (Predictive Study of Hysteretic Rubber Friction Based on Multiscale Analysis)

  • 남승국;오염락;전성희
    • Tribology and Lubricants
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    • 제30권6호
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    • pp.378-383
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    • 2014
  • This study predicts the of the hysteretic friction of a rubber block sliding on an SMA asphalt road. The friction of filled rubber on a rough surface is primarily determined by two elements:the viscoelasticity of the rubber and the multi-scale perspective asperities of the road. The surface asperities of the substrate exert osillating forces on the rubber surface leading to energy dissipation via the internal friction of the rubber when rubber slides on a hard and rough substrate. This study defines the power spectra at different length scales by using a high-resolution surface profilometer, and uses rubber and road surface samples to conduct friction tests. I consider in detail the case when the substrate surface has a self affine fractal structure. The theory developed by Persson is applied to describe these tests through comparison with the hysteretic friction coefficient relevant to the energy dissipation of the viscoelastic rubber attributable to cyclic deformation. The results showed differences in the absolute values of predicted and measured friction, but with high correlation between these values. Hence, the friction prediction model is an appropriate tool for separating the effects of each factor. Therefore, this model will contribute to clearer understanding of the fundamental principles of rubber friction.

인버터 구동형 저압 유동전동기의 절연특성 분석 (Analysis of Insulation Characteristics of Low-Voltage Induction Motors Fed by Pulse-Controlled Inverters)

  • 박도영
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2000년도 전력전자학술대회 논문집
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    • pp.195-198
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    • 2000
  • In this paper the insulation characteristics test results of 25 low-voltage induction motors($3\phi$, 5HP, 380V) are presented. Five different types of insulation techniques are applied to 25 motors. The maximum partial discharge (PD) magnitude ($\textrm{Q}_{m}$) discharge inception voltage (DIV) dissipation factor tip-up ($\Delta$tan$\delta$) and rate of change in AC current($\Delta$I) are measured by PD and AC current tests. Also the insulation breakdown tests by high voltage pulse are performed and the corresponding breakdown voltage are obtained.

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A multi-point sense amplifier for embedded SRAM

  • 장일관;김진국;이승민;곽계달
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 하계종합학술대회논문집
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    • pp.526-529
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    • 1998
  • This paper describes new sense amplifier with fast sensing delay time of 0.54ns and 32kb CMOS embedded SRAM with 4.67ns access time for a 3-V powr supply. It was achieved using the sense amplifier with multiple point sensing scheme and high speed bit-line scheme. The sense amplifier saves 25% of the power dissipation compared with the conventional one while maintaining a very short sensing delay. The SRAM uses 0.5.mu.m double-polysilicon and triplemetal CMOS process technology. A die size is 1.78mm*2.13mm.

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하드디스크 드라이브 읽기 채널용 6bit 800MSample/s 아날로그/디지털 변환기의 설계 (A 6bit 800MSample/s A/D Converter Design for Hard Disk Drive Read Channel)

  • 정대영;장흥석;신경민;정강민
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.164-167
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    • 2000
  • This paper introduces the design of high-speed analog-to-digital converter for hard disk drive (HDD) read channel. This is based on autozero technique for low-error rate, and Double Speed Dual ADC(DSDA) technique lot efficiently increasing the conversion speed of A/D converter. This An is designed by 6bit resolution, 800M sample/s maximum conversion rate, 390㎽ power dissipation, one clock cycle latency in 0.65 $\mu\textrm{m}$ CMOS technology.

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SiGe HBT를 이용한 10Gbps 2:1 시분할 멀티플렉서 설계 (10Gbps 2:1 Time-Division Multiplexer using SiGe HBT)

  • 이상흥;강진영;송민규
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.287-290
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    • 1999
  • In the transmitter of optical fiber transmission systems, a time-division multiplexer combines several parallel data streams into a single data stream with a high bit rate. In this paper, we design a 2:1 (2-channels) time-division multiplexer using SiGe HBT with emitter size of 2$\times$8${\mu}{\textrm}{m}$$^2$. The operation speed is 10Gbps, the rise and fall times of 20-80% are 34ps and 35ps, respectively and the dissipation of power is 0.86W.

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오프셋 보상된 A급 바이폴라 전류 콘베이어(CCII) (A offset compensated class A bipolar current conveyor(CCII))

  • 이주찬;박희종;이장혁;차형우;정원섭
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.971-974
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    • 1999
  • A offset compensated class A bipolar second-generation current conveyor (CCII) for high-accuracy current-mode signal processing was proposed. The CCII adopts two diode-connection transistor between voltage input and voltage output to reduce offset voltage. Experiments show that the proposed CCII has offset voltage of 0.05 ㎷, input impedance of 2 Ω and the 3-㏈ cutoff frequency of 30 MHz when used a voltage amplifier. The power dissipation is 6 ㎷.

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