• Current Optics and Photonics
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• v.5 no.6
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• pp.721-729
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• 2021

We demonstrate a Pr³⁺:YLF 639.7-nm laser with single-frequency output based on the Q-switched pre-lase technology, pumped by a fiber-coupled GaN blue laser diode. The pre-lase technology is realized by the step-type loss of the acousto-optical Q-switched device. The conclusions of the theoretical research are verified experimentally. The mode-suppression ratio was 44 dB at the single-frequency laser output. Detection by interferometer verified the realization of the stable single-frequency laser. In addition, the emission spectrum had a linewidth of 139.9 MHz, measured by Fabry-Perot interferometer. The single-frequency laser's single-peak power was over 19.7 W with 98.8-ns pulse duration, obtained under an absorption power of 1.74 W.

• Transactions of Materials Processing
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• v.24 no.5
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• pp.354-360
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• 2015

AHSS (Advanced High Strength Steels) has been increasingly employed by global automotive OEMs in order to satisfy strengthened regulations and reduce weight for fuel efficiency. Hot stamping using boron steels in AHSS increases not only formability but also strength. The typical hot-stamped automotive part is the center pillar that is critical for vehicle side impact. However, the hot-stamped part can be risky for the passenger safety caused by brittle fracture under a vehicle collision. The high power diode laser is suitable for the heat treatment giving AHSS increased elongation that prevents brittle fracture in car crash. Therefore, local softening by laser heat treatment for energy absorption area on the hot-stamped part improves crash-worthiness.

• Journal of Information Display
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• v.11 no.1
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.9-19
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• 2002

By using the thermionic emission model, the L-I-V(power-current-voltage) characteristics of a SCH(seperate confinement heterostructure) QW(quantum well) laser diode is analytically derived. We derived the relationships between the bulk carrier density of SCH regions and the confined carrier density of QW. The L-I-V characteristics is derived analytically by using current continuity equations. Solving the ambipolar diffusion equation under the condition of high level injection and charge neutrality, the current distribution in the SCH regions is considered. Results showed that the major factor affecting the laser I-V characteristics was the change of potential barrier at the cladding-SCH interface. Also the series resistance of a laser diode was decreased and the carrier injection was increased by increasing the forward flux of injection current from cladding to SCH region.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.327-330
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• 2003

We present the fabrication and measured performance of a wavelength tunable Butt coupled DBR-LD. An average coupling efficiency between active layer and passive waveguide layer was measured over 85％per facet, and the average threshold current was 21 ㎃ for the waveguide integrated DBR laser. High output power of Butt coupled DBR-LD was obtained over 25 ㎽. As high as 25 ㎽ of output power was achieved by the butt coupled method. The maximum wavelength tuning range is about 7.4 nm, and the side mode suppression ratio was more than 40 ㏈ using 1.3 ${\mu}{\textrm}{m}$ InGaAsP waveguide layer.

• Journal of Welding and Joining
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• v.28 no.3
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• pp.42-48
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• 2010

Polycarbonate (PC) and Acrylonitrile Butadiene Styrene (ABS) were welded by a combination of a diode laser and a CNC machining center. Laser beam delivered through the transparent PC and was absorbed in an opaque ABS. Polymers were melted and joined by absorbed and conducted heat. Experiments were carried out by varying working distance from 44mm to 50mm for the focus spot diameter control, laser input power from 10W to 25W, and scanning speed from 100 to 400mm/min. The weld bead and cross-section were analyzed for weld quality, and tensile results were presented through the joint force measurement. With focus distance at 48mm, laser power with 20W, and welding speed at 300mm/min, experimental results showed the best welding quality which bead size was measured to be 3.75mm. The shear strength at the given condition was $22.8N/mm^2$. Considering tensile strength of ABS is $43N/mm^2$, shear strength was sufficient to hold two materials. A single process was possible in a CNC machining system, surface processing, hole machining and welding. As a result, the process cycle time was reduced to 25%. Compared to a typical process, specimens were fabricated in a single process, with high precision.

• Tribology and Lubricants
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• v.35 no.5
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• pp.294-299
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• 2019

Most previous studies on water repellent surfaces using lasers rely on the use of pico- or femtosecond lasers. However, in industrial application, these methods have the disadvantages of high cost and low efficiency. In this study, we implement a hydrophobic surface using a high-power general-purpose diode laser. We have fabricated the microsurface using laser groove processing technology, and we present the correlation of wettability characteristics with space and width. The metal material is stainless steel (SUS 304), and the groove height during laser processing is set to $30{\mu}m$ to evaluate the wettability based on the gap and width of various grooves. Results show that the contact angle of the groove-shaped surface is increased by $40^{\circ}$ or more as compared with the surface without patterning, and the contact angle in the parallel direction is greater than that in the perpendicular direction. Results from contact angle hysteresis measurement experiments show that the groove width has a greater influence on the contact angle history than does the gap between grooves. In addition, the coating reveals that the contact angle can be increased using a chemical method and that the laser grooving process can further improve the wetting properties of the surface.

• Korean Journal of Optics and Photonics
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• v.32 no.2
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• pp.55-61
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• 2021

The lateral-mode characteristics of 850-nm GaAs/(Al,Ga)As multiple-quantum-well laser diodes and their influence on the kinks in output optical power are investigated. For the investigation, self-consistent electro-thermal-optical simulation and measurement of fabricated devices are used. From this investigation, the optimal P-cladding thickness that provides single-lateral-mode operation is determined, so that high beam quality can be achieved even at high output powers.

• Korean Journal of Optics and Photonics
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• v.32 no.5
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• pp.209-214
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• 2021

High-power continuous-wave operation of a Yb-doped double-clad fiber laser at 1018 nm, pumped by high-power diode lasers at 976 nm, is reported. Based on numerical calculation of the gain and laser signal power along the length of the Yb fiber, it is found that robust operation at 1018 nm can be achieved for a high Yb³⁺-ion excitation density greater than 11.5%, accompanied by high suppression of the feedback from the fiber's end facet. The Yb fiber laser constructed in house yields 626 W of continuous-wave output at 1018 nm for 729 W of incident pump power, corresponding to a slope efficiency of 86.6%. The prospect for power scaling is considered.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.371-376
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• 2007

We have investigated the lasing characteristics of the InGaAs quantum dot laser diode (QD-LD) and InGaAs quantum well laser diode (QW-LD) operated at the 980 nm wavelength range. The 980-nm lasers are used as a pumping source for a erbium-doped fiber amplifier (EDFA) and it shows high efficiency in long-haul optical fiber network. We have compared the threshold current density, the characteristic temperature, the optical power and the internal efficiency of QD-LD and QW-LD under a pulsed current condition. The QD-LD shows superior performances to the QW-LD. Further optimization of a LD structure is expected to the superior performances of a QD-LD.