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Effective Annealing and Crystallization of Si Film for Advanced TFT System  

Noguchi, Takashi (Faculty of Engineering, University of the Ryukyus 1 Senbaru)
Publication Information
Journal of Information Display / v.11, no.1, 2010 , pp. 12-16 More about this Journal
Abstract
The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.
Keywords
Poly-Si; Si film; Crystallization; ELA; ELC; BLDA; TFT;
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1 T. Noguchi. T. Ohshima, H. Hayashi, J. Ele. Chem..Soc., Solid-State Science and Technology, 134, 1771 (1987).
2 K. Kanzaki, Dig. of Tech. Papers on AM-LCD 01, 71 (2001).
3 T. Noguchi, A.J. Tang, J.A. Tsai and R. Reif, IEEE Trans. Ele. Dev., 43, 1454 (1996).   DOI   ScienceOn
4 T. Noguchi, H. Tsukamoto, T. Suzuki, and H. Masuya, Ext. Abst. Int. Conf. SSDM, 620 (1991).
5 D.P. Gosain, T. Noguchi and S. Usui, Jap. J. Appl. Phys. 39, L179 (2000).   DOI   ScienceOn
6 T. Noguchi, Y.Y. Kwon, J.S. Jung, J.M. Kim, K.B. Park, H. Lim, D.Y. Kim, H.S. Cho, H.X. Yin and W.X. Xianyu, Jap. J. Appl. Phys., 45, 432 (2006).   DOI   ScienceOn
7 T. Noguchi, Y. Ogino and M. Terao, Proc. of ITC'09, 10.1, 252 (2009).
8 N. Matsuo and H. Hamada, IEICE Tech. Report, SDM 200-13 (2000).
9 H. Lim, H.X. Yin, W.X. Xianyu, J.Y. Kwon, X.X. Zhang, H.S. Cho, J.M. Kim, K.B. Park, D.Y. Kim, J.S. Jung and T. Noguchi, J. of Korean.Phys. Soc.., 48, S.47 (2006).
10 T. Noguchi, Jap. J. Appl. Phys., 47, 1858 (2008).   DOI
11 T. Noguchi, K. Kawai, T. Miyahira, T. Suzuki and M. Sato, J. of Korean Phys. Soc., 54, 463 (2009).   DOI
12 T. Kaitoh, T. Miyazawa, H. Miyake, T. Noda, T. Sakai, Y. Owaku, and T. Saitoh, , Proc. of IDW07, TFTs, AMD-7, 481 (2007).
13 K.B. Park, H.S. Cho, H.X. Yin, J.S. Jung, D.Y. Kim, W.X. Xianyu, J.Y. Kwon, Y.S. Park and T. Noguchi, Proc. of IDW, 315 (2004).
14 T. Noguchi, H. Hayashi and T. Ohshima, Jap. J. Appl. Phys. Lett., 25, L121 (1986).   DOI
15 T. Noguchi, Y. Ogino and M. Terao, Proc. of AM FPD, 5-3, 203 (2009).
16 T. Noguchi, K. Tajima, and Y. Morita, Mat. Res. Soc. Symp. Proc., 146, 35 (1989).
17 K. Tatsuki, T. Arai, N. Umezu, K. Shirai, Y. Inagaki and T. Urabe, Dig. of Tech. Papers, AM- FPD 08, S-11, 109 (2008).
18 R.S. Sposil and J.S. Im, Appl. Phys. Lett., 69, 2864 (1996).   DOI   ScienceOn
19 T. Kamins, "Polycrystalline Silicon for Integrated Circuit Applications" (Kluwer Academic Publishers, 1988), p.112.
20 R.B. Iverson and R. Reif, J. Appl. Phys., 62, 1675 (1987).   DOI
21 J.Y. Kwon, J.S. Jung, K.B. Park, J.H. Hur, J.M. Kim, H. Lim, S.Y. Lee, J.M. Kim, T. Noguchi, J.H. Hur and J. Jang, Proc. SID'07, 34.2 (2007).
22 D. Debarre, G. Kerrien, T. Noguchi, J. Boulmer, IEICE Trans. Electron., E85-C, 1098 (2002).
23 D.Y. Kim, H.S. Cho, K.B. Park, D.Y. Kim, J.S. Jung and T. Noguchi, J. Korean Phys. Soc., 45, S847 (2004).