• Journal of the Korean Society for Precision Engineering
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• v.16 no.9
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• pp.149-158
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• 1999

The modern trends of optical storage devices can be characterized by high density in information recording, and high bandwidth in data input/output processing rate. These make servo engineers to face with a new barrier on control system design in much more difficult way. The first step to attack this barrier will be through a systematic modeling for the dynamic characteristics of optical storage drive. in this paper, an analytical dynamic model for an optical storage drive based on FEM is drived, and compared with experimental results. Through this comparison, a practical dynamic model on the focusing and tracking motion of optical storage drive is proposed for the initiation of real control system design problem.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.817-820
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• 2009

To meet the high current load requirement from the high energy density realized by metal oxide and high power density graphite, we propose a novel hybrid supercapacitor consisting of Nb2O5 and KS6 graphite in 1.0 M LiPF6-EC:DEC (1:2). This new system exhibits a sloping voltage profile from 2.7 to 3.5 V during charging and presents a high operating voltage plateau between 1.5 and 3.5 V during discharging. The cell was tested at a current density of 100 mA/g with a cut-off voltage between 3.0 and 1.0 V. This novel energy storage system delivers the highest initial discharge capacity of 55 mAh/g and exhibits a good cycle performance.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1719-1721
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• 2012

We have investigated the $H_2$ adsorption structures and binding energies of the metal (M)-doped (M = Li, Na, K, Mg, and Al) silicon complexes, $M-Si_{19}H_{11}$ and $M-Si_{24}H_{12}$, using density functional calculations. Alkali metals are preferred as doping elements because the Mg-Si and Al-$H_2$ interactions are weak. The maximum numbers of $H_2$ molecules that can be adsorbed are four and five for M=Li and K, respectively. We propose that the K-decorated silicon material might be an effective hydrogen storage material with high hydrogen capacity and high reversibility.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.05a
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• pp.484-489
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• 2001

Recent trends in information storage devices disk are the transition from CD drives to high density DVD drives, the development of writable disk drives and the appearance of several high-density portable disk drives. In some flexible disk drives, self-excited disk vibrations become severe as rotation speed increases near or above critical speed. Critical speeds of CD/DVD, ASMO and floppy disks are experimentally measured and compared with analytical predictions. Flutter instability caused by aero-induced disk vibration at high speeds are experimentally observed. In ASMO, three nodal-diameter mode experiences its flutter at 8750 rpm with the frequency lock-on phenomenon. The CD/DVD disk does not have the aero-induce flutter up to 14,000 rpm.

• Journal of Power Electronics
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• v.12 no.3
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• pp.458-467
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• 2012

Single phase converters suffer from ripple power pulsating at twice the line frequency. The ripple power is usually absorbed by a bulky capacitor bank and/or a dedicative LC resonant link, resulting in a low power density and a high cost. An alternative solution is using a dc link active power filter (APF) to direct the pulsating power into another energy-storage component. The main dc link filter capacitor can then be reduced substantially. Based on a mainstream dc APF topology, this paper proposed a new control strategy incorporating both dual-loop control and repetitive control. The circuit parameter design is also re-examined from a control point of view. The proposed APF scheme has better control performance, and is more suited for high power applications since it works in CCM and with a low switching frequency.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.71-75
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• 2021

Recently, transition-metal-based hydroxide materials have attracted significant attention in various electrochemical applications owing to their low cost, high stability, and versatility in composition and morphology. Among these applications, transition-metal-based hydroxides have exhibited significant potential in supercapacitors owing to their multiple redox states that can considerably enhance the supercapacitance performance. In this study, nanostructured Ni-Mn double hydroxide is directly grown on a conductive substrate using an electrodeposition method. Ni-Mn double hydroxide exhibits excellent electrochemical charge-storage properties in a 1 M KOH electrolyte, such as a specific capacitance of 1364 Fg-1 at a current density of 1 mAcm-2 and a capacitance retention of 94% over 3000 charge-discharge cycles at a current density of 10 mAcm-2. The present work demonstrates a scalable, time-saving, and cost-effective approach for the preparation of Ni-Mn double hydroxide with potential application in high-charge-storage kinetics, which can also be extended for other transition-metal-based double hydroxides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.417-422
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• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1060-1066
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• 1997

In this paper, the effects of La addition of PLZT thin film prepared by sol-gel method on the capacitor characteristics are investigated for gigabit generation DRAM applications. The addition of La on the PLZT capacitor results in a trade-off between charge storage density(Qc') and leakage current density(Jl). As La content increases, Qc' and permeability(εr) at 0V are reduced while Jl is significantly decreased. It is demonstrated that 5% La doping of PZT can substantially reduce Jl and also improve resistance to fatigue while incurring only minimal degradation of Qc'. Very low leakage current density (5×10-7 A/㎠ even at 125℃) and high charge storage density (100fC/㎛2) under VDD/2=1V conditions are achieved using 5% La doped PZT thin films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of the PLZT capacitors.

• Transactions of the Society of Information Storage Systems
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• v.3 no.1
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• pp.1-4
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• 2007

A high density optical data storage device has been required for many years. In the field of the optical data storage, a near-field recording (NFR) technology is considered as a next generation one for achieving the high data density. Due to an evanescent wave effect occurred under 100nm distance which is the excessively small distance between the SIL and the disc, the most significant and difficult problem in this technology is to maintain a gap between a solid immersion lens (SIL) and a disc. Also, maintaining the gap under at least 50nm is required in the NFR gap servo system to use the evanescent wave effect efficiently. There are some institutes that have shown the novel gap servo control. In general, they use a mode switching servo method which consists of approach, hand-over and gap control mode. However there is a critical problem such as an overshoot at the tuning point from the approach mode to the hand-over mode, which may cause a collision between the SIL and the disc. In this paper, we show our NFR system and an improved gap servo system using an exponential function as the approach mode which can reduce the overshoot.

• Journal of Powder Materials
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• v.30 no.6
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• pp.509-515
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• 2023

Lead-free perovskite ceramics, which have excellent energy storage capabilities, are attracting attention owing to their high power density and rapid charge-discharge speed. Given that the energy-storage properties of perovskite ceramic capacitors are significantly improved by doping with various elements, modifying their chemical compositions is a fundamental strategy. This study investigated the effect of Zn doping on the microstructure and energy storage performance of potassium sodium niobate (KNN)-based ceramics. Two types of powders and their corresponding ceramics with compositions of (1-x)(K,Na)NbO₃-xBi(Ni_2/3Ta_1/3)O₃ (KNN-BNT) and (1-x)(K,Na)NbO₃-xBi(Ni_1/3Zn_1/3Ta_1/3)O₃ (KNN-BNZT) were prepared via solid-state reactions. The results indicate that Zn doping retards grain growth, resulting in smaller grain sizes in Zn-doped KNN-BNZT than in KNN-BNT ceramics. Moreover, the Zn-doped KNN-BNZT ceramics exhibited superior energy storage density and efficiency across all x values. Notably, 0.9KNN-0.1BNZT ceramics demonstrate an energy storage density and efficiency of 0.24 J/cm³ and 96%, respectively. These ceramics also exhibited excellent temperature and frequency stability. This study provides valuable insights into the design of KNN-based ceramic capacitors with enhanced energy storage capabilities through doping strategies.