• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.918-921
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• 1999

The breakdown voltage in fully depleted SOI N-MOSFET’s have been studied over a wide range of film thicknesses, channel doping, and channel lengths. An asynmmetric Source/Drain SOI technology is proposed, which having the advantages of Normal LDD SOI(Silicon-On-Insulator) for breakdown voltage and gives a high drivability of LDD SOI without sacrificings hot carrier immunity The two-dimensional simulations have been used to investigate the breakdown behavior in these device. It is found that the breakdown voltage(BVds) is almost same with high current drivability as that in Normal LDD SOI device structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.911-915
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• 2004

In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.249-251
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• 2003

This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.408-412
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• 2023

In this paper, in order to analyze high electrical insulation and cooling performance using mineral oil, the liquid insulating oil was changed in electrode shape and distance between electrodes to compare and analyze electrical characteristics according to equal electric field, quasi-equivalent electric field, and unequal electric field. As a result, the breakdown voltages were 36,875 V and 36,875 V in the form of sphere-sphere and plate-plate electrodes with equal electric fields. The breakdown voltage was 31,475 V in the sphere-plate electrode type, which is a quasi-equilibrium field, and the breakdown voltage was 28,592 V, 27,050 V, and 22,750 V in the needle-needle, sphere-needle, and needle-plate electrode types, which are unequal fields. Through this, it is possible to know the difference in breakdown voltage according to the type of electric field. The more equal the field, the higher the breakdown voltage, and the more unequal field, the lower the breakdown voltage. The difference in insulation breakdown voltage could be seen depending on the type of electric field, the insulation breakdown voltage was higher for the more equal electric field, and the insulation breakdown voltage was lower for the more unequal electric field. Also, it was confirmed that the closer the distance between the electrodes, the higher the insulation breakdown voltage, the higher the insulation breakdown current, and the insulation breakdown voltage and the insulation breakdown current were proportional.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.210-213
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• 2017

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.22-23
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.148-151
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• 2017

This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1901-1903
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• 1996

In This paper, to understand statistical properties of breakdown voltage, the experiment is performed on four gaps of different electrode area, ranging from $17.44[cm^2]$ to $1809.5[cm^2]$, in $SF_6$ gas. Statictcial property of breakdown is confirmed Weibull distribution and as area of electrode is increased, breakdown voltage is decreased and converged constant value $E_0$.