• 전자공학회논문지A
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• 제31A권9호
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• 한국세라믹학회지
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• 제45권6호
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• pp.358-362
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• 2008

$BiFeO_3$ films were hetero-epitaxially grown on $SrTiO_3$ substrate with a various orientation by pulse laser deposition. $BiFeO_3$ films grown on (111) $SrTiO_3$ substrate have a rhombohedral structure, identical to that of single crystals. On the other hand, films grown on (110) or (001) $SrTiO_3$ substrate are monoclinically distorted from the rhombohedral structure due to the epitaxial constraint. The easy axis of spontaneous polarization is close to [111] for the variously oriented films. Dramatically enhanced polarization and magnetization have been found for $BiFeO_3$ thin films grown on $SrTiO_3$ substrate comparing to that of $BiFeO_3$ crystals. The results are explained in terms of an epitaxially-induced transition between cycloidal and homogeneous spin states, via magneto-electric interactions.

• 대한화학회지
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• 제40권3호
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• pp.167-172
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• 1996

GaN 단결정 박막은 halide vapor phase epitaxy(HVPE)방법을 사용하여 사파이어 기판위에 헤케로에피탁시하게 성장시켰다. 이렇게 제조된 박막은 n형 전동성을 갖는다. 아연(Zn)을 받개 불순물로 도핑시켜 절연형 GaN 박막을 만들었는데 2.64과 2.43eV의 청색영역에서 발광 피크를 가졌다. 본 연구에의해 GaN 박막은 MIS(metal-insulator-semiconductor) 접합구조로 제작이 가능함을 시사하였고, 이종접합형 발광소자 개발에 기초자료가 될 것으로 전망된다.

• ETRI Journal
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• 제27권4호
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• 센서학회지
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• 제3권1호
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• pp.5-11
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• 1994

본 논문은 실리콘기판 직접접합기술과 에피택샬 성장법으로 각각 형성한 SOI구조, 즉 Si/$SiO_{2}$/Si 및 Si/$Al_{2}O_{3}$/Si 상에 제작한 압저항형 압력센서의 특성을 기술한다. SOI구조의 절연층을 압저항의 유전체 분리막으로 이용한 압력센서는 $300^{\circ}C$ 까지 사용 가능했다. SOI구조의 절연층을 박막 실리콘 다아어프램 형성시 에칭 중지막으로 이용한 경우, 제작된 압력센서의 200개 소자들에 대한 압력감도의 변화는 ${\pm}2.3%$ 이내로 제어 가능했다. 더구나 실리콘 기판 직접접합기술과 에피택샬 성장법의 결합으로 형성한 더불 SOI구조($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$)상에 제작된 압력센서는 고온분위기에서 사용 가능할 뿐만 아니라 고분해 능력을 갖는 특성을 보였다.

• 전자공학회논문지D
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• 제34D권3호
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2011

This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

• 생명과학회지
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• 제17권7호통권87호
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• pp.882-888
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• 2007

전분 젤 전기영동을 사용하여 한국내 분포하는 동자개 여섯 집단에서 유전적 다양성과 집단구조를 평가하였다. 14개 대립유전자좌위에서 9좌위가 다형현상을 나타내었다(64.3%). 종수준과 집단수준에서 유전적 다양성은 각각 0.286과 0.277이였다. Wright의 고정지수에서 Hardy-Weinberg 평형에 비해 전반적인 이형접합체 결핍이 나타났다. 이 결핍은 집단내 유효한 개체수의 부족을 시사한다. 집단간 유전적 분화 정도는 0.064로 대부분의 유전적 변이(93.6%)가 집단내에 있음을 의미한다. 간접적으로 평가된 집단간 이주하는 개체수는 3.67로 나타났다. 제한된 유전자 유동과 유효집단의 감소는 유전적 부동을 유발하고, 주기적인 포획으로 인한 개체수의 감소는 유전자 상실로 이어지고 있다. 대부분의 집단이 겨울철 가뭄과 여름철 홍수로 심한 병목을 겪고 있었다.

• 한국안전학회지
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• 제14권1호
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• pp.101-107
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• 1999

$TiO_2$ and $xTiO_2-ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area was measured. Considering the efficiency of the ethanol decomposition using the catalyst, the conclusion was made as follows: 1) By means of X-ray analysis of $TiO_2$ powder that is obtained from water and Titanium alkoxide with various molar ratios, it is shown that structure of crystallization is a dominating structure and, on the other hand, the crystallization of rutile also partly exists. The specific surface area is at its maximum value at R=6, which is the molar ratio of water vs. alkoxide, whereas its value goes down as the molar ratio increases. In the reaction of using $TiO_2$ catalyst, the ethanol is decomposed into the extent of 15 ~30% in an hour and three hours are necessitated for 70% decomposition. 2) $TiO_2/SiO_2$ powder is developed from Titanium and Silicon alkoxide by a hetero-condensation process. The increase of SiO$_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. In the decomposition reaction of the ethanol, the decomposition efficiency represents 25~60% in an hour. It is, however, examined that the efficiency inactively increases corresponding to the duration of reaction time. It is shown that more than 90% of ethanol is decomposed when reaction time is about three hours and the efficiency illustrates the maximum value for 60-$TiO_2/4O-SiO_2$ catalyst.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.69.2-69.2
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• 2010

Recently, bulk hetero-junction cells have been extensively studied by many researchers. Most of these cells were fabricated by spin coater. However, the spin coating process is not favorable to the large-scaled industry because it is not compatible with roll-to-roll process. One of the alternative methods is Doctor blading. In this study, we fabricated large OPV cells having total area of $100cm^2$. The buffer layer was Poly-(3,4-ethylenedioxythiophene) : poly-(styrenesulfonate) aqueous dispersion (PEDOT:PSS) and the active material is poly (3-hexythiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blend in the solvent of Chlorobenzene. All of the organic layers were coated by dragging the blade with a speed of 5~20 mm/s on the stage with a temperature of $50^{\circ}C$. As-bladed PEDOT:PSS layer was baked at $120^{\circ}C$ for 10 minutes to eliminate the water. The cell structure is patterned ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al. The topmost electrode, LiF/Al, was deposited by thermal evaporation. After depositing electrode, and the cell was annealed at $150^{\circ}C$ for 30 minutes. The measured ISC, VOC, fill factor, and PCE were 2.95 A, 5.86 V, 0.32, and 0.78%, respectively. PCE was quite low but the large active area could be obtained successfully.