Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 3
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- Pages.60-73
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- 1997
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- 1226-5845(pISSN)
Optimization of multiple-quantum-well structures in 1.55.$\mu$ InGaAsP/InGaAsP SL-MQW DFB-LD for high-speed direct modulation
고속직접변조를 위한 1.55.$\mu$ . InGaAsP/InGaAsP SL-MQW DFB-LD의 양자우물구조의 최적화
Abstract
By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells
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