• Applied Science and Convergence Technology
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• 제26권3호
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• 한국분말재료학회지
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• 제14권2호
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• pp.97-100
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• 2007

The magnetic alloys of Cu-Fe ($Cu_{50}Fe_{50},\;Cu_{80}Fe_{20}\;and\;Cu_{90}Fe_{10}$) were prepared by a mechanical alloying method and their structural and magnetic behaviors were examined by X-ray diffraction and Mossbauer spectra. The magnetization curves did not distinctly show the saturation at 70 kOe for the concentrated alloys of $Cu_{80}Fe_{20}\;and\;Cu_{90}Fe_{10}$. The Mossbauer spectrum of $Cu_{80}Fe_{20}$ at room temperature shows one Lorentzian line of the paramagnetic phase, whereas the Mossbauer spectrum of $Cu_{90}Fe_{10}$ consists of sextet Lorentzian line at room temperature and a centered doublet line. The Mossbauer spectra of $Cu_{90}Fe_{10}$ measured in the temperature ranges from 13 to 295 K, implies that $Cu_{90}Fe_{10}$ to consists of two magnetic phases. One superimposed sextet corresponds to the ferromagnetic iron in Cu and the other one indicates the superparamagnetic iron rich phase.

• 한국자기공명학회논문지
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• 제21권4호
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• pp.131-134
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• 2017

Proton detected Heteronuclear Multiple Quantum Coherence (HMQC) and Heteronuclear Single Quantum Coherence (HSQC) essentially provide the same information - correlation of the chemical shift of the proton to J-coupled hetero nuclei such as $^{13}C$ or $^{15}N$ nuclei. This paper is a practical note for the students who ask which one is better and which methods they use routinely. Artifact suppression using phase cycling and gradient pulses are discussed.

• 한국진공학회지
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• 제6권3호
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• pp.181-186
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• 1997

TiC(001) 면위에 Mg금속을 증착시킨 후 상온에서 산소를 노출시키는 방법으로 hetero-epitaxial MgO막을 성장시켰으며, 성장된 MgO epitaxial막의 구조를 비행시간형 직 충돌 이온산란분광법을 사용하여 해석하였다. MgO막은 산화 직후 무질서한 배열을 갖으나, 약 $300^{\circ}C$의 가열에 의해서 1$\times$1구조로 전환된다. TiC(001) 위에 성장된 MgO막은 다음과 같은 구조를 갖고 있음이 밝혀졌다. Mg 및 O원자는 TiC의 on-top site에 위치하고, 면내방 향의 격자상수는 TiC의 격자상수와 일치하며, MgO막의 대부분은 2층 이내의 원자층으로 구성되어 있다.

• 접착 및 계면
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• 제14권3호
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• pp.135-145
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• 2013

환경친화형 반도체 봉지재로서 할로겐 화합물 등의 첨가형 난연제를 혼합하지 않고 자기소화성을 발현시키는 에폭시수지 조성물에 관해 연구하였다. 탄화수소계 방향족 공액이중결합의 구조를 갖는 에폭시수지와 페놀수지의 반응물에서 자기소화성을 갖는 낮은 연소열이 확인되었다. 본 연구에서는 탄화수소계 방향족 공액이중결합에 헤테로원자계 이중결합인 아조메틴기를 도입하여 더욱 낮은 연소열을 확인할 수 있었다. 낮은 연소열의 결과는 높은 반응열과 열전이온도 그리고 빠른 반응성과 관련이 있으며 아조메틴기의 헤테로원자 구조의 영향 때문으로 보인다.

• 센서학회지
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• 제11권3호
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• pp.155-162
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• 2002

CO 기체 감지 특성을 향상시키기 위해서 3 mol% ZnO를 첨가한 $SnO_2$와 3mol% $SnO_2$를 첨가한 ZnO의 적층 형태를 변화시켜 연구하였다. 적층 구조는 단일층, 복층, 그리고 이종층 구조로 후막 인쇄법을 사용하여 제작하였다. $SnO_2$-ZnO계에서 제 2상은 발견되지 않았다. 전도성은 $SnO_2$에 ZnO를 첨가하면 감소하고, ZnO에 $SnO_2$를 첨가하면 증가하였다. 측정 온도증가와 CO 기체 유입으로 전도성은 증가하였다. 단층 및 복층의 후막센서 구조의 감도 향상은 없었으나, $SnO_2$ 3ZnO-ZnO $3SnO_2$/substrate 구조의 이종층 센서의 감도는 향상되었다. 센서 구조에 관계없이 I-V 변화는 모두 직선성을 나타내서 Ohmic 접합 특성을 이루고 있었다.

• 대한전자공학회논문지
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• 제26권10호
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• pp.1545-1553
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• 1989

The ohmic contact behavior in HEMT structure was compared with that in MESFET one throughout the specific contact resistance and microstructural change in both structures. A Au-Ge-Ni based metallization scheme was used and the alloying temperature of the ohmic materials was changed from 330\ulcorner to 550\ulcorner. The alloying temperature to obtain the minimum specific contact resistance in HEMT structure was 60k higher than that in MESFET. The volume fraction of NiAs (Ge) in MESFET structure increases with alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In contrast, the volume fraction of NiAs(Ge) in HEMT structure was not dependent upon the specific contact resistance, which implies that the ohmic contacts are dominantly formed by the Ge diffusion to 2-DEG(two dimensional electron gas) layer.

• 신재생에너지
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• 제4권2호
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Reproductive and Developmental Biology
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• 제29권1호
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• pp.15-18
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• 2005

PSS hetero 돼지를 이용하여 PSS와 관련된 유전자를 cloning 하여 유전자 구조를 분석하고 세포내의 유전자의 존재를 확인하여 PSS 돼지의 유전양식을 밝히고자 실시되었고, 그 결과를 요약하면 다음과 같다. 615번 amino acid가 N과 n에서 각각 arginine과 cysteine으로 존재함을 확인할 수 있었다. 그리고 6번 염색체(PSS 관련유전자)로부터 우성유전자 N과 열성유전자 n이 각각 유전자 좌위(locus)에 대립 유전자(alleles)로 존재함을 확인할 수 있었으며, 이러한 alleles로 존재함으로써 각각의 유전자가 나뉘어져 유전됨을 알 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.131-144
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• 2015

An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.