• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• International Journal of Highway Engineering
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• v.18 no.5
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• pp.31-37
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• 2016

PURPOSES : The purpose of this study is to evaluate the effect of the quiet pavement on reducing a barrier height by using a prediction tool called SoundPLAN. METHODS : Firstly, the prediction was carried out to evaluate the difference in the maximum noise level at a building facade between the normal and the quiet pavements without a barrier. After calculating the noise reduction effect by the quiet pavement, a comparable barrier height to obtain the same noise reduction effect with it was predicted according to designable factors including road-building distance(10 m, 20 m, 40 m) and road-barrier distance(5 m, 10 m, 20 m, 30 m). RESULTS : The result showed that within the considered designable factors, the maximum barrier height was 37 m, 52 m, and 55 m to have the same noise reduction effect by the quiet pavement reducing 1 dBA, 3 dBA, and 5 dBA, respectively. It was evaluated that the barrier height increased with the increase of the road-building and road-barrier distances. To simulate the real situation in urban areas and to evaluate the combined effect of the normal/quiet pavement and barrier, the barrier height was fixed as 6 m. It was predicted that the noise level would reduce to as low as 0.2 dBA by the combination of normal pavement and barrier. On the other hand, the combination of the quiet pavement and barrier reduced 1.2 dBA, 3.2 dBA, and 5.2 dBA, respectively, for quiet pavement reducing 1 dBA, 3 dBA, and 5 dBA. CONCLUSIONS : A guideline needs to be suggested to select appropriate noise abatement schemes by considering factors such as the roadbuilding and road-barrier distances.

• Wind and Structures
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• v.20 no.4
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• pp.509-525
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• 2015

A three-dimensional aerodynamic model and a vehicle dynamics model are established to investigate the effect of noise barrier on the dynamic performance of a high-speed train running on an embankment in crosswind in this paper. Based on the developed model, flow structures around the train with and without noise barrier are compared. Effect of the noise barrier height on the train dynamic performance is studied. Then, comparisons between the dynamic performance indexes of the train running on the windward track and on the leeward track are made. The calculated results show that the noise barrier has significant effects on the structure of the flow field around the train in crosswind and thus on the dynamic performance of the high-speed train. The dynamic performance of the train on the windward track is better than that on the leeward track. In addition, various heights of the noise barrier will have different effects on the train dynamic performance. The dynamic performance indexes keep decreasing with the increase of the noise barrier height before the height reaches a certain value, while these indexes have an inverse trend when the height is above this value. These results suggest that optimization on the noise barrier height is possible and demonstrate that the designed noise barrier height of the existing China Railway High-speed line analysed in this article is reasonable from the view point of the flow field structure and train dynamic performance although the noise barrier is always designed based on the noise-related standard.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.457-461
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• 2009

In this paper, barrier height between Ni-silicide and source/drain is reduced utilizing Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. It is shown that the barrier height is decreased by Pd incorporation and is dependent on the Pd thickness. Therefore, Ni-silicide using the Pd stacked structure is promising for high performance nano-cale PMOSFET.

• Journal of the Korean Society for Railway
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• v.19 no.2
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• pp.124-134
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• 2016

Research on low height noise barriers installed adjacent to railways to reduce the height of the noise barrier has actively progressed in many countries except Korea. The performance of low height noise barriers is evaluated to identify barrier acoustic characteristics using a scale model of the barrier in the present research. As shown in the experimental results, if it is considered the installation of 'ㄱ' type noise barrier, sound absorption material should be installed on both the top and the vertical surfaces of the barrier to improve insertion loss. Also, an analytical method such as the boundary element method, rather than a simple empirical equation, is required to evaluate the insertion loss of the barrier. In addition, noise level increase in passenger position is very small if a barrier with sound absorption material is installed. Finally, the two dimensional boundary element method is implemented to predict the acoustic characteristics of the low height barrier; the possibility of the application is confirmed from a comparison of the results of measurements and predictions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.7-15
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• 2015

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.66-67
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• 2002

Magnetic tunnel junction에서는 spin의 tunneling이 가장 기본적인 현상이기 때문에 tunnel junction의 특성은 tunnel barrier의 성질에 크게 의존한다. Tunnel barrier로는 지금까지 $Al_2$O$_3$가 주로 사용되고 있다. 하지만 $Al_2$O$_3$의 경우는 barrier height가 2-3 eV로 높기 때문에 저 저항의 tunnel junction을 형성하기 위해서는 Al의 두께가 1nm 이하로 낮아져야 한다. 따라서 이를 극복하기 위해서 $Al_2$O$_3$ 보다 낮은 barrier height를 갖는 절연막을 tunnel barrier로 사용하고자 하는 연구가 많이 진행되고 있다 (예를 들면 TaOx [1], ZrOx [2], GaOx [3], and HfOx [4]). (중략)

• International Journal of Highway Engineering
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• v.17 no.4
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• pp.63-68
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• 2015

PURPOSES : A study on the efforts to minimize the road traffic noise has been underway. An attempt has been made to measure the noise level using a noise map; however, the attempt is limited to certain areas only. In general, a noise barrier is employed to prevent road traffic noise; however, unplanned noise barriers developed without considering the surrounding environment, including excessively high walls, cause problems such as infringement on prospect right. Noise ceiling at daytime in Korea is 68 dB(A), which is relatively higher than in other countries. METHODS: The noise barrier used mainly for road noise reduction was analyzed to estimate the optimal height. Related variables such as road width, the height of the upper part, distance to the building, and angle (for instance, $30^{\circ}$). RESULTS : A formula to calculate the optical height of the noise barrier, considering the road environment (i.e., parameters such as road width and distance to building), was developed in this study in an attempt to mitigate the noise generated from the road. CONCLUSIONS : The formula to calculate the noise barrier is expected to lead to cost saving, accurate installation of barriers, and protection of the right of prospect.

• ETRI Journal
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• v.24 no.6
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• pp.455-461
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• 2002

This paper reports on estimating the Schottky barrier height of small contacts using a thermionic-field emission model. Our results indicate that the logarithmic plot of the current as a function of bias voltage across the Schottky diode gives a linear relationship, while the plot as a function of the total applied voltage across a metal-silicon contact gives a parabolic relationship. The Schottky barrier height is extracted from the slope of the linear line resulting from the logarithmic plot of current versus bias voltage across the Schottky diode. The result reveals that the barrier height decreases from 0.6 eV to 0.49 eV when the thickness of the barrier metal is increased from 500 ${\AA}$ to 900 ${\AA}$. The extracted impurity concentration at the contact interface changes slightly with different Ti thicknesses with its maximum value at about $2.9{\times}10^{20}\;cm^{-3}$, which agrees well with the results from secondary ion mass spectroscopy (SIMS) measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.618-622
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• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.